Tritech-MOS-TM06G02S
| Part # | Tritech-MOS-TM06G02S |
Download  | Tritech-MOS-TM06G02S |
P-Channel Enhancement Mode
N+
Mosfet
TM06G02S
General Description
P
P
r
r
o
o
d
d
u
u
c
c
t
t
S
S
u
u
m
m
m
m
a
a
r
r
y
y
N Channel
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
V
DS
= 20V,I
D
=6.0A
R
DS(ON)
=
21
m
(
typ
.)
Ω
@ V
GS
=4.5V
Applications
P Channel
V
DS
= -20V,I
D
= –
5.0
A
• Load switch
• PWM
R
DS(ON)
=
52
m
Ω
(
typ
.)
@ V
GS
=4.5V
100% UIS Tested
100% R
g
Tested
S:SOP-8L
Marking: 06G02 OR 4606B
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
Parameter
Units
N-Channel P-Channel
V
DS
Drain-Source Voltage
20
±
12
6
-20
±
12
-5
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
r
Gate-Sou ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
5
-4
A
20
72
21
2.5
-12
59
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
mJ
A
I
AS
-19
2.08
Total Power Dissipation
4
W
℃
℃
P
D
@T
C
=25
℃
T
STG
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
—
Max.
85
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θJA
R
θJC
—
50
1/6
TM06G02S
P-Channel Enhancement Mode
N+
Mosfet
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
GS
=0V, I
D
=250μA
V
DS
=20V, V
GS
=0V,
V
DS
=0V, V
GS
=±12V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
20
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
DS
=V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=4A
V
GS
=2.5V, I
D
=3A
V
GS(th)
R
DS(on)
Gate Threshold Voltage
0.4
0.7
21
29
1
V
–
–
27
44
Static Drain-Source on-Resistance
note2
mΩ
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
358
69.3
58.5
5.6
0.8
1
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=10V, V
GS
=0V,
f=1.0MHz
C
oss
Output Capacitance
C
rss
Q
g
Reverse Transfer Capacitance
Total Gate Charge
V
DS
=10V, I
D
=2A,
V
GS
=4.5V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Switching Characteristics
Turn-on Delay Time
–
–
–
–
5
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V,
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
30
48
36
I
D
=4A, R
GEN
=3Ω,
V
GS
=4.5V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
6
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
16
1.2
Drain to Source Diode Forward
V
GS
=0V, I
S
=4A
V
SD
Voltage
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
2/6
TM06G02S
P-Channel Enhancement Mode
N+
Mosfet
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
GS
=0V, I
D
= -250μA
V
DS
= -20V, V
GS
=0V,
V
DS
=0V, V
GS
= ±12V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
-20
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
DS
=V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -3A
V
GS
= -2.5V, I
D
= -2A
V
GS(th)
R
DS(on)
Gate Threshold Voltage
-0.5
-0.7
52
-1.0
70
V
–
–
Static Drain-Source on-Resistance
note2
mΩ
70
100
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
503
67
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -10V, V
GS
=0V,
f=1.0MHz
C
oss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
58
C
rss
Q
g
4.1
0.8
1.1
V
DS
= -10V, I
D
= -2A,
V
GS
= -4.5V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Switching Characteristics
Turn-on Delay Time
–
–
–
–
11
52
16
10
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -10V, I
D
= -3A,
R
G
=1Ω, V
GEN
= -4.5V,
R
L
=1.2Ω
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
-5
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
-12
-1.2
Drain to Source Diode Forward
V
GS
=0V, I
S
= -3A
V
SD
Voltage
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
3/6
P-Channel Enhancement Mode
N+
Mosfet
TM06G02S
Typical Performance Characteristics
N-Channel Typical Characteristics
Figure1:
Output Characteristics
Figure 2:
Typical Transfer Characteristics
I
D
(A)
D
I (A)
25
25
20
15
10
5
2.5V
20
15
10
5
2.0V
4.5V
V
GS
=1.5V
125
℃
25
℃
V
GS
(V)
1.5
V
DS
(V)
0
0
0
1
2
3
4
5
0
0.5
1
2.0
2.5
3.0
Figure 4
: Body Diode Characteristics
I (A)
S
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
35
30
1E+01
1E+00
V
GS
=2.5V
1E-01
1E-02
25
20
15
10
J
T =125
℃
25
℃
V
GS
=4.5V
1E-03
1E-04
1E-05
I
D
(A)
V
SD
(V)
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
5
4
3
2
V
DS
=10V
I
D
=2A
10
3
C
iss
C
oss
C
rss
10
2
10
1
1
0
V
DS
(V)
15
Q
g
(nC)
3
0
1
2
4
5
6
0
5
10
20
25
30
4/6
P-Channel Enhancement Mode
N+
TM06G02S
Mosfet
Typical Performance Characteristics
P-Channel Typical Characteristics
Figure1:
Output Characteristics
Figure 2:
Typical Transfer Characteristics
-I
D
(A)
-I
D
(A)
20
20
V
GS
=-10V
16
16
12
V
GS
=-4.5V
100
℃
12
8
25
℃
-2V
8
4
0
4
-1.5V
-V
GS
(V)
-V
DS
(V)
0
0
1
2
3
4
5
6
5
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
-I
S
(A)
10
R
DS(ON)
(mΩ)
100
80
70
V
GS
=-2.5V
T
J
=100
℃
T
J
=25
℃
1
60
50
V
GS
=-4.5V
40
30
-I
D
(A)
-V
SD
(V)
1.2 1.6
0.1
0.0
0.4
0.8
2.0
2.4
2.8
0
1
2
3
4
5
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
5
4
3
10
4
10
3
V
DS
=-10V
I
D
=-2A
C
iss
C
oss
C
rss
10
2
2
10
1
10
0
1
0
Q
g
(nC)
-V
DS
(V)
0
1
2
3
4
0
5
10
15
20
5/6
Package Mechanical Data:SOP-8L
6
8/
6
8
