Tritech-MOS-TM06G06S
| Part # | Tritech-MOS-TM06G06S |
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P-Channel Enhancement Mode
N+
Mosfet
TM06G06S
General Description
P
P
r
r
o
o
d
d
u
u
c
c
t
t
S
S
u
u
m
m
m
m
a
a
r
r
y
y
N Channel
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
V
DS
= 60V,
I
D
=6A
R
DS(ON)
=
30
m
( .)
Ω
typ
@ V
GS
=10V
Applications
P Channel
• Load switch
• PWM
V
DS
= -60V,I
D
= –
5A
(
.)
R
DS(ON)
=
70
m
Ω
typ
@ V
GS
=-10V
100% UIS Tested
100% R
g
Tested
S:SOP-8L
Marking: 06G06 OR 4559A
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
Parameter
Units
N-Channel P-Channel
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
60
±
20
6.0
-60
±
20
-5.0
-3.5
-8.5
35.3
-26.6
2.5
V
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
4.0
A
11
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
22.5
22.6
2.5
mJ
A
I
AS
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
85
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
62 5
1/8
TM06G06S
P-Channel Enhancement Mode
N+
Mosfet
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
GS
=0V, I
D
=250μA
V
DS
=60V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±20V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
60
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
1.0
1.6
30
36
2.5
40
50
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1148
58.5
49.4
20.3
3.7
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
=30V, I
D
=2.5A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
5.3
Switching Characteristics
Turn-on Delay Time
–
–
–
–
7.6
20
15
24
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=30V, I
D
=5A,
R
G
=1.8Ω, V
GS
=10V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
6
20
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=5A
–
V
Voltage
Body Diode Reverse Recovery Time
29
43
ns
nC
Body Diode Reverse Recovery
Charge
I
F
=5A, dI/dt=100A/μs
Qrr
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.
EAS condition : T
J
=25
℃
,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25Ω,I
AS
=8.7A
3.
Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
2/8
P-Channel Enhancement Mode
N+
Mosfet
TM06G06S
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
Typ.
—
Max.
—
90
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
m
V
V
GS
=-10V , I
D
=-3.5A
70
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=-4.5V , I
D
=-3.1A
—
90
105
-2.5
1
V
GS
=V
DS
, I
D
=-250uA
-1.0
—
—
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=55
℃
—
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
nA
S
±
100
—
—
—
—
—
—
—
—
—
—
—
V
DS
=-5V , I
D
=-3A
—
8.5
12.1
2.2
6.3
9.2
20.1
46.7
9.4
1137
76
Q
g
—
V
DS
=-48V , V
GS
=-4.5V , I
D
=-3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
Turn-On Delay Time
Rise Time
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
—
ns
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
—
pF
—
50
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,5
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-6.0
-1.2
Unit
A
I
S
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-24A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
3/8
P-Channel Enhancement Mode
N+
Mosfet
TM06G06S
N-Channel Typical Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
12
I
D
(A)
12
10V
4.5V
4V
10
8
9
6
T
J
=125
℃
6
25
℃
V
GS
=2V
4
3
0
2
V
GS
(V)
V
DS
(V)
0
0
0.5
1
1.5
2
2.5
0
0.8
1.6
2.4
3.2
4.0
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
I
S
(A)
45
1.0E+01
1.0E+00
1.0E-01
1.0E-02
40
35
V
GS
=4.5V
V
GS
=10V
I
D
(A)
125
℃
T
J
=25
℃
30
25
1.0E-03
20
15
1.0E-04
1.0E-05
V
SD
(V)
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
4
10
3
10
2
10
1
10
8
V
DS
=30V
I
D
=2.5A
C
iss
6
4
C
oss
C
rss
2
0
V
DS
(V)
Q
g
(nC)
0
5
10
15
20
25
0
10
20
30
40
50
4/8
P-Channel Enhancement Mode
N+
Mosfet
TM06G06S
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
V
1.3
BR(DSS)
R
DS
(on)
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.9
0.8
Tj (
℃
)
Tj (
℃
)
0.5
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating
Area
Figure 10:
Maximum Continuous Drain Current vs.
Ambient Temperature
I
D
(A
)
I
D
(A
)
6
10
2
10
1
10
0
5
4
3
10μs
100
μ
s
1
s
10ms
Limited by R
DS(on)
100ms
DC
2
1
0
10
-1
10
-2
T
A
=25
℃
Single pulse
T
A
(
℃
)
V
DS
(V)
0.1
1
10
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-1
10
-2
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
5/8
P-Channel Enhancement Mode
N+
Mosfet
TM06G06S
P-Channel Typical Characteristics
12
V
GS
=-3V
10
8
6
V
GS
=-10V
4
V
GS
=-7V
V
V
GS
=-5V
2
0
GS
=-4.5V
0
0.5
1
1.5
2
-V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
12
10
I
D
=-3A
10
8
6
4
2
8
6
4
2
0
T
J
=150
℃
T
J
=25
℃
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
2.5
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
o
T
J
,Junction Temperature ( C)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
6/8
P-Channel Enhancement Mode
N+
Mosfet
TM06G06S
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P
DM
T
ON
0.01
T
D = T
ON
/T
SINGLE
T
Jpeak
= T
C
+P
DM
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
7/8
Package Mechanical Data:SOP-8L
8/8
