Tritech-MOS-TM06H06S

N+  

Mosfet  

N-Channel Enhancement Mode  

TM06H06S  

Product Summary  

General Description  

V

DS

= 60V

 

I

D

= 6.0A  

• Low R

DS(ON)  

• RoHS and Halogen-Free Compliant  

=10V  

(typ.) @V

GS  

R

DS(ON)  

=28  

mΩ  

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

D2  

D1  

S:SOP-8L  

G2  

G1  

Marking: 4828 OR 6946  

S2  

S1  

Absolute Maximum Ratings

(T

A

= 25



C unless otherwise noted)  

Symbol  

Parameter  

Rating  

60  

Units  

V

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

±

20  

6.0  

V

I

D

@T

A

=25

℃  

I

D

@T

A

=70

℃  

I

DM  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Pulsed Drain Current

2  

A

4.5  

A

22  

A

EAS  

Single Pulse Avalanche Energy

3  

22  

mJ  

A

I

AS  

Avalanche Current  

23  

P

D

@T

A

=25

℃  

T

STG  

Total Power Dissipation

4  

1.5  

W

℃

℃

Storage

T

e

mperature Range  

Operating Junction Temperature Range  

-55 to 150  

-55 to 150  

T

J  

Thermal Data  

Symbol  

R

θ

JA  

Parameter  

Typ.  

—  

Max.  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-ambient

1  

Thermal Resistance Junction-Case

1  

85  

25  

R

θ

JC  

—  

1/5  

N+  

Mosfet  

N-Channel Enhancement Mode  

TM06H06S  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max. Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

=250μA  

V

DS

=60V, V

GS

= 0V,  

V

DS

=0V, V

GS

= ±20V  

60  

–

–

–

–

–

V

1.0  

μA  

nA  

I

GSS  

–

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=5A  

V

GS

=4.5V, I

D

=3A  

1.0  

1.6  

28  

36  

2.5  

40  

50  

V

–

–

Static Drain-Source on-Resistance  

R

DS(on)  

mΩ  

note3  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

1148  

58.5  

49.4  

20.3  

3.7  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

=25V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

V

DS

=30V, I

D

=2.5A,  

V

GS

=10V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

5.3  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

7.6  

20  

15  

24  

–

–

–

–

ns  

ns  

ns  

ns  

V

DS

=30V, I

D

=5A,  

R

G

=1.8Ω, V

GS

=10V  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

–

–

5

20  

1.2  

–

A

A

Current  

I

SM  

V

SD  

trr  

Maximum Pulsed Drain to Source Diode Forward Current  

Drain to Source Diode Forward  

V

GS

=0V, I

S

=5A  

–

V

Voltage  

Body Diode Reverse Recovery Time  

29  

43  

ns  

nC  

I

F

=5A, dI/dt=100A/μs  

Body Diode Reverse Recovery  

Charge  

Qrr  

–

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction

T

e

mperature  

2. EAS condition : T

J

=25

℃

,V

DD

=30V,V

G

=10V,L=0.5mH,Rg=25Ω,I

AS

=8.7A  

3. Pulse

T

est: Pulse Width≤300μs, Duty Cycle≤0.5%  

2/5  

N+  

Mosfet  

N-Channel Enhancement Mode  

TM06H06S  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

I

D

(A)  

12  

I

D

(A)  

12  

10V  

4.5V  

10  

8

4V  

9

T

J

=125

℃

 

6

6

25

℃  

V

GS

=2V  

4

3

2

V

GS

(V)  

2.4  

V

DS

(V)  

0

0

0

0.5  

1

1.5  

2

2.5  

0

0.8  

1.6  

3.2  

4.0  

Figure 4

: Body Diode Characteristics  

Figure 3:

On-resistance vs. Drain Current  

I

S

(A)  

R

DS(ON)

(mΩ)  

45  

1.0E+01  

1.0E+00  

1.0E-01  

1.0E-02  

40  

35  

V

GS

=4.5V  

V

GS

=10V  

125

℃  

T

J

=25

℃  

30  

25  

1.0E-03  

20  

15  

1.0E-04  

1.0E-05  

I

D

(A)  

V

SD

(V)  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

0

1

2

3

4

5

6

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

V

GS

(V)  

C(pF)  

10

4  

10

3  

10

2  

10

1  

10  

8

V

DS

=30V  

I

D

=2.5A  

C

iss  

6

4

C

oss  

C

rss  

2

0

Q

g

(nC)  

V

DS

(V)  

0

5

10  

15  

20  

25  

0

10  

20  

30  

40  

50  

3/5  

N+  

Mosfet  

N-Channel Enhancement Mode  

TM06H06S  

Figure 8:

Normalized on Resistance vs.  

Figure 7:

Normalized Breakdown Voltage vs.  

Junction Temperature  

Junction Temperature  

V

BR(DSS)  

R

DS

(on)  

2.5  

1.3  

1.2  

1.1  

1.0  

2.0  

1.5  

1.0  

0.5  

0.9  

Tj (

℃

)  

Tj (

℃

)  

0.8  

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 9:

Maximum Safe Operating Area  

Figure 10:

Maximum Continuous Drain Current  

vs. Ambient Temperature  

I

D

(A

)

 

I

D

(A

)  

6

10

2  

5

4

3

10μs  

10

1  

10

0  

100μs  

1ms  

10ms  

Limited by R

DS(on)  

100ms  

DC  

2

1

0

10

-1  

10

-2  

T

A

=25

℃  

Single pulse  

T

A

(

℃

)  

V

DS

(V)  

0.1  

1

10  

100  

0

25  

50  

75  

100  

125  

150  

Figure.11:

Maximum Effective  

Transient Thermal Impedance, Junction-to-Ambient  

Zth

J-A

(

℃

/W)  

10

2  

10

1  

10

0  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

D=0.05  

D=0.02  

D=0.01  

Single pulse  

10

-1  

10

-2  

Notes:  

1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJA

+T

A  

T

P

(s)  

10

-2  

10

-6  

10

-5  

10

-4  

10

-3  

10

-1  

10

0  

10

1  

4/5  

Package Mechanical Data:SOP-8L  

5/5