Tritech-MOS-TM06N02MI

-Channel  

N

TM06N02MI  

Enhancement Mosfet  

General Description  

General Features  

V

DS

= 20V

 

I

D

=6.2A  

• Low R

DS(ON)  

• RoHS and Halogen-Free Compliant  

R

DS(ON)

= 19  

(

Typ

.)  

@ V

GS

=4.5V  

mΩ  

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

MI:

SOT-23-3L  

D

S

G

Marking:2300  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Symbol  

V

DS  

Parameter  

Rating  

20  

Units  

V

Drain-Source Voltage  

V

GS  

Gate-Sou

r

ce Voltage  

±

12  

6.2  

V

I

D

@T

A

=25

℃  

I

D

@T

A

=70

℃  

I

DM  

Continuous Drain Current, V

GS

@ 4.5V

1  

Continuous Drain Current, V

GS

@ 4.5V

1  

Pulsed Drain Current

2  

A

3.0  

16.4  

A

A

P

D

@T

A

=25

℃  

T

STG  

Total Power Dissipation

3  

1.0  

W

℃

℃

Storage

T

e

mperature Range  

Operating Junction Temperature Range  

-55 to 150  

-55 to 150  

T

J  

Thermal Data  

Symbol  

R

θ

JA  

Parameter  

Typ.  

—  

Max.  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-ambient

1  

Thermal Resistance Junction-Case

1  

170  

—  

R

θ

JC  

—  

1/5  

-Channel  

N

TM06N02MI  

Enhancement Mosfet  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

=250μA  

V

DS

=20V, V

GS

=0V,  

V

DS

=0V, V

GS

=±12V  

20  

–

–

–

–

–

V

1.0  

μA  

nA  

I

GSS  

–

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=4.5V, I

D

=4A  

V

GS

=2.5V, I

D

=3A  

0.4  

0.7  

18  

25  

1

V

–

–

2

4  

4

1  

Static Drain-Source on-Resistance  

R

DS(on)  

mΩ  

note2  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

358  

69.3  

58.5  

5.6  

0.8  

1

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

=10V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

V

DS

=10V, I

D

=2A,  

V

GS

=4.5V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

Switching Characteristics  

t

d(on)

Turn-on Delay Time  

t

r  

t

d(off)  

t

f  

–

–

–

–

5

–

–

–

–

ns  

ns  

ns  

ns  

V

DS

=10V,  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

30  

48  

36  

I

D

=4A, R

GEN

=3Ω,  

V

GS

=4.5V  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

6

I

S  

–

–

–

–

–

–

A

A

V

Current  

I

SM  

Maximum Pulsed Drain to Source Diode Forward Current  

16  

1.2  

Drain to Source Diode Forward  

V

GS

=0V, I

S

=4A  

V

SD  

Voltage  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction

T

e

mperature  

2. Pulse

T

est: Pulse Width≤300μs, Duty Cycle≤0.5%  

2/5  

-Channel  

N

TM06N02MI  

Enhancement Mosfet  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

I

D

(A)  

I

D

(A)  

25  

25  

20  

2.5V  

20  

2.0V  

4.5V  

15  

10  

5

15  

10  

V

GS

=1.5V  

125

℃

 

25

℃  

5

V

GS

(V)  

1.5  

V

DS

(V)  

0

0

0

1

2

3

4

5

0

0.5  

1

2.0  

2.5  

3.0  

Figure 3:

On-resistance vs. Drain Current  

R

DS(ON)

(mΩ)  

Figure 4

: Body Diode Characteristics  

I

S

(A)  

35  

1E+01  

1E+00  

30  

V

GS

=2.5V  

1E-01  

1E-02  

25  

20  

15  

10  

T

J

=125

℃  

25

℃  

V

GS

=4.5V  

1E-03  

1E-04  

1E-05  

I

D

(A)  

V

SD

(V)  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

0

1

2

3

4

5

6

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

V

GS

(V)  

C(pF)  

5

4

3

2

V

DS

=10V  

I

D

=2A  

10

3  

C

iss  

C

oss  

10

2  

10

1  

C

rss  

1

0

V

DS

(V)  

Q

g

(nC)  

0

1

2

3

4

5

6

0

5

10  

15  

20  

25  

30  

3/5  

-Channel  

N

TM06N02MI  

Enhancement Mosfet  

Figure 8:

Normalized on Resistance vs.  

Figure 7:

Normalized Breakdown Voltage vs.  

Junction Temperature  

Junction Temperature  

R

DS

(on)  

V

BR(DSS)  

2.5  

1.3  

1.2  

2.0  

1.5  

1.1  

1.0  

1.0  

0.5  

0.9  

0

Tj (

℃

)  

Tj (

℃

)  

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 10:

Maximum Continuous Drain Current  

Figure 9:

Maximum Safe Operating Area  

vs. Ambient Temperature  

I

D

(A

)

 

I

D

(A

)  

5

4

3

2

10

2  

10

1  

10

0  

10

-1  

10

-2  

100μs  

1ms  

10ms  

Limited by R

DS(on)  

100ms  

DC  

T

A

=25

℃  

Single pulse  

1

0

T

A

(

℃

)  

V

DS

(V)  

1

0.01  

0.1  

10  

0

25  

50  

75  

100  

125  

150  

Figure.11:

Maximum Effective Transient Thermal  

Impedance, Junction-to-Ambient  

Zth

J-A

(

℃

/W)  

10

3  

10

2  

1

10  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

10

0  

D=0.05  

D=0.02  

D=0.01  

Notes:  

Single pulse

 

1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJC

+T

A  

10

-1  

T

P

(s)  

10

-5  

10

-4  

10

-3  

10

-2  

10

-1  

10

0  

10

1  

10

2  

4/5  

Package Information:SOT-23-3L  

Dimensions In Millimeters  

Symbol  

Dimensions In Inches  

Min.  

Min.  

1.050  

0.000  

1.050  

0.300  

0.100  

2.820  

1.500  

2.650  

Max.  

1.250  

0.100  

1.150  

0.500  

0.200  

3.020  

1.700  

2.950  

Max.  

0.049  

0.004  

0.045  

0.020  

0.008  

0.119  

0.067  

0.116  

A

A1  

A2  

b

c

D

0.041  

0.000  

0.041  

0.012  

0.004  

0.111  

0.059  

0.104  

E1  

E

e

0.950(BSC)  

0.037(BSC)  

e1  

L

θ

1.800  

0.300  

0°  

2.000  

0.600  

8°  

0.071  

0.012  

0°  

0.079  

0.024  

8°  

5/5