Tritech-MOS-TM06P03I

TM06P03I  

P-Channel Enhancement Mosfet  

General Features  

General Description  

V

DS

= -30V

 

I

D

=-6.0A  

• Low R

DS(ON)  

• RoHS and Halogen-Free Compliant  

(

Typ

.)  

R

DS(ON)

= 26mΩ  

@ V

GS

=10V  

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

I:SOT-23  

D

S

G

Marking: 30P06  

Absolute Maximum Ratings

(T

A

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Drain-Source Voltage  

Max.  

Units  

V

DSS  

V

GSS  

-30  

±20  

V

V

Gate-Source Voltage  

T

A

= 25

℃

 

-6  

A

I

D  

Continuous Drain Current  

T

A

= 100

℃  

-4.6  

A

I

DM  

P

D  

Pulsed Drain Current

note1  

Power Dissipation  

-18  

A

T

A

= 25

℃  

1.5  

W

℃

/W  

℃

R

θJA  

Thermal Resistance, Junction to Ambient  

61.7  

T

J

, T

STG

Operating and Storage

T

e

mperature Range  

-55 to +150  

1/5  

TM06P03I  

P-Channel Enhancement Mosfet  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ. Max. Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

= -250μA  

V

DS

= -30V, V

GS

=0V,  

V

DS

=0V, V

GS

= ±20V  

-30  

–

–

–

–

V

–

–

-1  

μA  

nA  

I

GSS  

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

= -250μA  

V

GS

= -10V, I

D

= -7A  

V

GS

= -4.5V, I

D

= -4A  

-1.0  

-1.5  

26  

-2.5  

35  

V

–

–

Static Drain-Source on-Resistance  

R

DS(on)  

mΩ  

note3  

34  

54  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

982  

135  

109  

10  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

= -15V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

T

o

tal Gate Charge  

V

DS

= -15V, I

D

= -4A,  

V

GS

= -10V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

2

2.7  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

11  

19  

45  

26  

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

= -15V, I

D

= -7A,  

V

GS

= -10V, R

GEN

=2.5Ω  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

-6  

A

A

V

Current  

I

SM  

Maximum Pulsed Drain to Source Diode Forward Current  

-28  

-1.2  

Drain to Source Diode Forward  

V

GS

=0V, I

S

= -7A  

V

SD  

-0.8  

Voltage  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction

T

e

mperature  

2. Pulse

T

e

st: Pulse Width≤300μs, Duty Cycle≤2%  

2/5  

TM06P03I  

P-Channel Enhancement Mosfet  

Typical Performance Characteristics  

Figure1:

Output Characteristics  

Figure 2:

Typical Transfer Characteristics  

-I

D

(A)  

15  

-I

D

(A)  

15  

T

J

=-55

℃

 

-10V  

12  

12  

-4.5V  

25

℃  

-4V  

9

9

6

125

℃  

6

3

-3V  

3

0

V

GS

=-2V  

-V

GS

(V)  

1.5 2.0 2.5 3.0 3.5 4.0  

-V

DS

(V)  

0

0

1.0  

2.0  

3.0  

4.0  

5.0  

0

0.5 1.0  

4.5  

Figure 3:

On-resistance vs. Drain Current  

Figure 4

: Body Diode Characteristics  

-I

S

(A)  

R

DS(ON)

(mΩ)  

60  

50  

40  

30  

10  

V

GS

=-4.5V  

T

J

=150

℃  

T

J

=-25

℃  

T

J

=-50

℃  

1

V

GS

=-10V  

20  

10  

-I

D

(A)  

-V

SD

(V)  

0.6 0.8  

0

0.1  

0.0  

0

2

4

6

8

10  

12  

0.2  

0.4  

1.0  

1.2  

1.4  

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

-V

GS

(V)  

C(pF)  

10  

8

V

DS

=-15V  

I

D

=-4A  

C

iss  

10

3  

6

C

oss  

C

rss  

10

2  

4

2

0

10

1  

-V

DS

(V)  

15  

Q

g

(nC)  

0

2

4

6

8

10  

0

5

10  

20  

25  

30  

3/5  

TM06P03I  

P-Channel Enhancement Mosfet  

Figure 8:

Normalized on Resistance vs.  

Figure 7:

Normalized Breakdown Voltage vs.  

Junction Temperature  

Junction Temperature  

R

DS

(on)  

2.5  

-V

BR(DSS)  

1.3  

1.2  

1.1  

1.0  

2.0  

1.5  

1.0  

0.9  

Tj (

℃

)  

Tj (

℃

)  

0.5  

-100  

0

-100  

-50  

0

50  

100  

150  

200  

-50  

0

50  

100  

150  

200  

Figure 10:

Maximum Continuous Drain Current  

vs. Ambient Temperature  

Figure 9:

Maximum Safe Operating Area  

-I

D

(A

)

 

-I

D

(A

)  

10

2  

8

Limited by R

DS(on)  

10μs  

10

1  

6

4

100μs  

1ms  

10ms  

10

0  

100ms  

DC  

10

-1  

2

T

A

=25

℃  

Single pulse  

10

-2  

T

A

(

℃

)  

-V

DS

(V)  

1

0

0.01  

0.1  

10  

100  

0

25  

50  

75  

100  

125  

150  

175  

Maximum Effective  

Transient Thermal Impedance, Junction-to-Ambient  

Zth

J-A

(

℃

/W)  

10

2  

10

1  

10

0  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

D=0.05  

D=0.02  

D=0.01  

Single pulse  

10

-1  

10

-2  

Notes:  

1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJA

+T

A  

T

P

(s)  

10

-2  

10

-6  

10

-5  

10

-4  

10

-3  

10

-1  

10

0  

10

1  

4/5  

Package Mechanical Data:SOT-23  

Dimensions in Millimeters  

Symbol  

MIN.  

MAX.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

A

A1  

A2  

b

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

c

D

E

E1  

e

0.950TYP  

e1  

L

1.800  

2.000  

0.550REF  

L1  

θ

0.300  

0°  

0.500  

8°  

5/5