Tritech-MOS-TM07G04S
| Part # | Tritech-MOS-TM07G04S |
Download  | Tritech-MOS-TM07G04S |
P-Channel Enhancement Mode
N+
Mosfet
TM07G04S
General Description
P
P
r
r
o
o
d
d
u
u
c
c
t
t
S
S
u
u
m
m
m
m
a
a
r
r
y
y
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
N Channel
V
DS
= 40V,
I
D
=7.3A
(
ty
p
.)
R
DS(ON)
=
26
m
Ω
@ V
GS
=10V
Applications
P Channel
• Load switch
• PWM
V
DS
= -40V,I
D
= –
6.1
A
(
ty
p
.)
R
DS(ON)
=
56
m
Ω
@ V
GS
=-10V
100% UIS Tested
100% R
g
Tested
S:SOP-8L
Marking: 7004
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
Parameter
Units
N-Ch
40
P-Ch
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
-40
±
20
-6.1
V
V
A
±
20
Continuous Drain Current, V
GS
@ 10V
1
7.3
I
D
@T
A
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
4.9
26
-3.8
-22
A
A
I
D
@T
A
=70
℃
I
DM
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
16.2
6.8
39
mJ
A
I
AS
-6.8
1.67
T
o
tal Power Dissipation
4
1.67
W
℃
P
D
@T
A
=25
℃
T
STG
T
J
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
-55 to 150
-55 to 150
-55 to 150
-55 to 150
℃
℃
/W
℃
/W
R
θ
JA
R
θ
JC
57
30
1/8
P-Channel Enhancement Mode
N+
Mosfet
TM07G04S
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
40
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
44
Max.
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS
T
e
mperature Coefficient
V
GS
=0V , I
D
=250uA
—
—
36
49
2.5
—
1
△
BVDSS/
△
TJ
Reference to 25
℃
, I
D
=1mA
V/
℃
0.034
26
V
GS
=10V , I
D
=5A
V
GS
=4.5V , I
D
=4A
RDS(ON)
Static Drain-Source On-Resistance
2
mΩ
36
VGS(th)
Gate Threshold Voltage
1.6
-4.56
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
mV/
℃
V
DS
=32V , V
GS
=0V , T
J
=25
℃
V
DS
=32V , V
GS
=0V , T
J
=55
℃
V
GS
=±20V , V
DS
=0V
IDSS
Drain-Source Leakage Current
uA
—
5
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±100
—
—
—
—
—
—
—
—
—
—
—
nA
S
V
DS
=5V , I
D
=5A
14
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.6
5.5
1.25
2.5
8.9
2.2
41
Ω
Q
g
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Q
gs
V
DS
=20V , V
GS
=4.5V , I
D
=5A
nC
ns
Q
gd
Td(on)
T
r
Turn-On Delay Time
Rise Time
V
DD
=20V , V
GS
=10V , R
G
=3.3Ω
I
D
=1A
Td(off)
T
f
Turn-Off Delay Time
Fall Time
2.7
593
76
C
iss
Coss
Crss
I
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
V
DS
=15V , V
GS
=0V , f=1MHz
pF
—
—
—
—
56
—
—
—
—
7.3
23
A
A
V
V
G
=V
D
=0V , Force Current
ISM
V
GS
=0V , I
S
=1A , T
J
=25
℃
VSD
1.2
Note :
1
、
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The EAS data shows Max. rating . The test condition is V
DD
=25
V
,
V
GS
=10
V
,
L=0.1mH,I
AS
=10A
4
、
The power dissipation is limited by 150
℃
junction temperature
5
、
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/8
P-Channel Enhancement Mode
N+
Mosfet
TM07G04S
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-3A
Min. Typ.
Max.
—
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BV
DSS
T
e
mperature Coefficient
-40
—
-44
-0.018
56
△
BVDSS/
△
TJ
—
V/
℃
—
76
RDS(ON)
Static Drain-Source On-Resistance
2
mΩ
V
GS
=-4.5V , I
D
=-2A
—
76
85
VGS(th)
Gate Threshold Voltage
-1.0
—
-1.5
2.5
-2.5
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
mV/
℃
V
DS
=-40V , V
GS
=0V , T
J
=25
℃
—
—
-1
IDSS
Drain-Source Leakage Current
uA
V
DS
=-40V , V
GS
=0V , T
J
=55
℃
V
GS
=±20V , V
DS
=0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-5
±100
—
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
T
o
tal Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
nA
S
V
DS
=-5V , I
D
=-3A
5.8
6.4
2.1
2.5
4.2
23
Q
g
—
V
DS
=-32V , V
GS
=-4.5V , I
D
=-
3A
Qgs
Qgd
Td(on)
T
r
—
nC
—
Turn-On Delay Time
Rise Time
—
V
DD
=-20V , V
GS
=-4.5V ,
R
G
=3.3Ω, I
D
=-3A
—
ns
Td(off)
T
f
Turn-Off Delay Time
Fall Time
26.8
20.6
620
65
—
—
Ciss
Coss
Crss
IS
Input Capacitance
—
Output Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
—
pF
Reverse Transfer Capacitance
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
53
—
—
-6.1
-16.1
-1
A
A
V
V
G
=V
D
=0V , Force Current
ISM
VSD
—
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
Note :
1
、
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The power dissipation is limited by 150
℃
junction temperature
4
、
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
3/8
P-Channel Enhancement Mode
N+
Mosfet
TM07G04S
N-Channel Typical Characteristics
4/8
P-Channel Enhancement Mode
N+
Mosfet
TM07G04S
5/8
P-Channel Enhancement Mode
N+
Mosfet
TM07G04S
P-Typical Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
otice.
6/8
P-Channel Enhancement Mode
N+
Mosfet
TM07G04S
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
C
+
P
DM
x
R
θ
JC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Data and specifications subject to change without notice.
7/8
Package Mechanical Data:SOP-8L
8/8
