Tritech-MOS-TM08G04RS
| Part # | Tritech-MOS-TM08G04RS |
Download  | Tritech-MOS-TM08G04RS |
P-Channel Enhancement Mode
N+
Mosfet
TM08G04RS
General Description
Product Summary
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
N Channel
V
DS
=
40
V, I
D
=8A
(
.)
typ
R
DS(ON)
=24m
Ω
@ V
GS
=10V
@ V
GS
=-10V
Applications
P Channel
• Load switch
• PWM
V
DS
= -40V,I
D
= –
7
A
(
.)
typ
R
DS(ON)
=35m
Ω
100% UIS Tested
100% R
g
Tested
D1
D1
D2
D2
D2
S:SOP-8L
D2
D1
D1
S2
G2
G1
S1
G1
G2
S2
S1
Marking: 08G04R
OR 4614BR
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
Parameter
Units
N-Ch
40
P-Ch
-40
V
DS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
A
±
20
8
±
20
-7
V
GS
Continuous Drain Current, V
GS
@ 10V
1
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
4.2
26
-4.2
-24
39
A
A
I
DM
Single Pulse Avalanche Energy
3
T
o
tal Power Dissipation
4
16.2
1.67
mJ
W
℃
EAS
P
D
@T
A
=25
℃
1.67
T
STG
T
J
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
-55 to 150
-55 to 150
-55 to 150
-55 to 150
℃
℃
/W
℃
/W
R
θ
JA
R
θ
JC
57
30
1/8
N+P-Channel Enhancement Mode
Mosfet
TM08G04RS
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
40
—
—
—
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
44
Max.
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS
T
e
mperature Coefficient
V
GS
=0V , I
D
=250uA
—
—
35
49
3.5
—
1
△
BVDSS/
△
TJ
Reference to 25
℃
, I
D
=1mA
V/
℃
0.034
24
V
GS
=10V , I
D
=5A
V
GS
=4.5V , I
D
=4A
RDS(ON)
Static Drain-Source On-Resistance
2
mΩ
36
VGS(th)
Gate Threshold Voltage
2.5
-4.56
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
mV/
℃
V
DS
=32V , V
GS
=0V , T
J
=25
℃
V
DS
=32V , V
GS
=0V , T
J
=55
℃
V
GS
=±20V , V
DS
=0V
IDSS
Drain-Source Leakage Current
uA
—
5
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±100
—
—
—
—
—
—
—
—
—
—
—
nA
S
V
DS
=5V , I
D
=5A
14
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.6
5.5
1.25
2.5
8.9
2.2
41
Ω
Q
g
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Q
gs
V
DS
=20V , V
GS
=4.5V , I
D
=5A
nC
ns
Q
gd
Td(on)
T
r
Turn-On Delay Time
Rise Time
V
DD
=20V , V
GS
=10V , R
G
=3.3Ω
I
D
=1A
Td(off)
T
f
Turn-Off Delay Time
Fall Time
2.7
593
76
C
iss
Coss
Crss
I
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
V
DS
=15V , V
GS
=0V , f=1MHz
pF
—
—
—
—
56
—
—
—
—
6.1
23
A
A
V
V
G
=V
D
=0V , Force Current
ISM
V
GS
=0V , I
S
=1A , T
J
=25
℃
VSD
1.2
Note :
1
、
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The EAS data shows Max. rating . The test condition is V
DD
=25
V
,
V
GS
=10
V
,
L=0.1mH,I
AS
=10A
4
、
The power dissipation is limited by 150
℃
junction temperature
5
、
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/8
N+P-Channel Enhancement Mode
Mosfet
TM08G04RS
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max. Unit
BVDSS
Drain-Source Breakdown Voltage
BV
DSS
T
e
mperature Coefficient
V
GS
=0V , I
D
=-250uA
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-5A
-40
—
—
-0.02
35
—
—
48
68
V
△
BVDSS/
△
TJ
V/
℃
—
RDS(ON)
Static Drain-Source On-Resistance
2
mΩ
V
GS
=-4.5V , I
D
=-3A
—
49
VGS(th)
Gate Threshold Voltage
-1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-2.5
3.72
—
-3.5
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
mV/
℃
V
GS(th)
T
e
mperature Coefficient
V
DS
=-32V , V
GS
=0V , T
J
=25
℃
V
DS
=-32V , V
GS
=0V , T
J
=55
℃
V
GS
=±20V , V
DS
=0V
1
IDSS
Drain-Source Leakage Current
uA
nA
—
5
IGSS
Q
g
Gate-Source Leakage Current
T
o
tal Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
±100
—
15.8
3.5
3.2
5.2
7
Q
gs
V
DS
=-20V , V
GS
=-4.5V , I
D
=-6A
—
nC
Q
gd
—
Td(on)
T
r
Turn-On Delay Time
Rise Time
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3Ω,
I
D
=-1A
ns
Td(off)
T
f
Turn-Off Delay Time
Fall Time
23
—
8
—
C
iss
Input Capacitance
1000
160
100
—
—
Coss
Crss
I
S
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Diode Forward Voltage
2
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
—
V
G
=V
D
=0V , Force Current
-5.7
-1.2
A
V
V
GS
=0V , I
S
=-1A , T
J
=25
℃
VSD
—
Note :
1
、
The data tested by surface mo
unted on a 1 inch
2
FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The EAS data shows Max. rating . The test condition is V
DD
=-25
V
,
V
GS
=-10
V
,L=0.1mH,I
AS
=-7A
4
、
The power dissipation is limited by 150
℃
junction temperature
5
、
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
3/8
P-Channel Enhancement Mode
N+
Mosfet
TM08G04RS
N-Channel Typical Characteristics
4/8
N+P-Channel Enhancement Mode
Mosfet
TM08G04RS
5/8
P-Channel Enhancement Mode
N+
Mosfet
TM08G04RS
P-Channel Typical Characteristics
6/8
N+P-Channel Enhancement Mode
Mosfet
TM08G04RS
7/8
Package Mechanical Data:
SOP-8L
8/8
