Tritech-MOS-TM09N02I
| Part # | Tritech-MOS-TM09N02I |
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TM09N02I
-Channel Enhancement Mosfet
N
Product Summary
General Description
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
V
DS
= 20V
I
D
=9.0A
(
Typ
.)
R
DS(ON)
=11 mΩ
@ V
GS
=4.5V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
I
:
S
O
T
–
2
3
D
S
G
Marking: 07N02
OR 2312
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
Units
Drain-Source Voltage
20
±
12
7.5
V
V
V
GS
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
A
5.0
A
32
A
Total Power Dissipation
3
2
W
W
℃
℃
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
Total Power Dissipation
3
0.66
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Max.
Unit
Thermal Resistance Junction-ambient
1
120
℃
/W
R
θJA
1/5
TM09N02I
-Channel Enhancement Mosfet
N
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
GS
=0V, I
D
=250μA
V
DS
=20V, V
GS
=0V,
V
DS
=0V, V
GS
=±12V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
20
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
DS
=V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=8A
V
GS
=2.5V, I
D
=5A
V
GS(th)
R
DS(on)
Gate Threshold Voltage
0.5
0.7
11
15
1.2
16
V
–
–
Static Drain-Source on-Resistance
note2
mΩ
22.5
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
700
132
114
15
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=10V, V
GS
=0V,
f=1.0MHz
C
oss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
g
V
DS
=10V, I
D
=4A,
V
GS
=4.5V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
2
5.2
Switching Characteristics
Turn-on Delay Time
–
–
–
–
9
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V,
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
25
37
14
I
D
=4A, R
GEN
=3Ω,
V
GS
=4.5V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
9.0
32
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=8A
V
SD
1.2
Voltage
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
2/5
TM09N02I
-Channel Enhancement Mosfet
N
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
I
D
(A)
25
25
20
15
10
5
2.5V
20
2.0V
4.5V
15
10
V
GS
=1.5V
125
℃
25
℃
5
0
V
GS
(V)
V
DS
(V)
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2.0
2.5
3.0
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
Figure 4
: Body Diode Characteristics
I
S
(A)
21
1E+01
1E+00
1E-01
18
V
GS
=2.5V
15
12
9
T
J
=125
℃
25
℃
1E-02
1E-03
V
GS
=4.5V
1E-04
1E-05
I
D
(A)
V
SD
(V)
6
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
12
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
5
4
3
2
V
DS
=10V
I
D
=4A
10
3
C
iss
C
oss
C
rss
10
2
10
1
1
0
V
DS
(V)
Q
g
(nC)
0
3
6
9
12
15
0
4
8
12
16
20
3/5
TM09N02I
-Channel Enhancement Mosfet
N
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
R
DS
(on)
V
BR(DSS)
1.3
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
Figure 9:
Maximum Safe Operating Area
I
D
(A
)
I
D
(A
)
10
8
10
2
10μs
10
1
10
0
100μs
6
1ms
4
10ms
Limited by R
DS(on)
10
-1
10
-2
DC
T
A
=25
℃
Single pulse
2
0
T
A
(
℃
)
V
DS
(V)
1
0.01
0.1
10
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient Thermal
Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
3
10
2
10
1
D=0.5
t1
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t2
10
0
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
10
-1
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
4/5
Package Mechanical Data SOT-23
:
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
5/5
