Tritech-MOS-TM10V03S

P-Channel Enhancement Mode  

P+  

TM10V03S  

Mosfet  

Product Summary  

General Description  

V

DS

=

–

30V I

D

=

-9.8A  

• Low R

DS(ON)  

• RoHS and Halogen-Free Compliant  

R

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

S:SOP-8L  

Marking:10V03 OR 4805  

Absolute Maximum Ratings (TC=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Drain-Source Voltage  

Max.  

Units  

V

DSS  

V

GSS  

-30  

±20  

V

V

Gate-Source Voltage  

T

C

= 25

℃

 

-9.8  

A

I

D  

Continuous Drain Current  

T

C

= 100

℃  

-8  

A

I

DM  

P

D  

Pulsed Drain Current

note1  

Power Dissipation  

-40  

A

T

A

= 25

℃  

3.7  

W

℃

/W  

℃

R

θJA  

Thermal Resistance, Junction to Ambient  

33.8  

T

J

, T

STG

Operating and Storage

T

e

mperature Range  

-55 to +150  

1/6  

P-Channel Enhancement Mode  

P+  

TM10V03S  

Mosfet  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

Units  

Off Characteristic  

V

GS

=0V, I

D

= -250μA  

V

DS

= -30V, V

GS

=0V,  

V

DS

=0V, V

GS

= ±20V  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

-30  

–

–

–

–

V

–

–

-1  

μA  

nA  

I

GSS  

±100  

On Characteristics  

V

DS

=V

GS

, I

D

= -250μA  

V

GS

= -10V, I

D

= -10A  

V

GS

= -4.5V, I

D

= -5A  

V

GS(th)  

R

DS(on)  

Gate Threshold Voltage  

-1.0  

-1.5  

-2.5  

23  

V

–

–

Static Drain-Source on-Resistance  

Note3  

12  

22  

mΩ  

27  

Dynamic Characteristics  

C

iss  

Input Capacitance  

–

–

–

–

–

–

1330  

183  

156  

22  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

= -15V, V

GS

=0V,  

f=1.0MHz  

C

oss  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

C

rss  

Q

g  

V

DS

= -15V, I

D

= -5A,  

V

GS

= -10V  

1.0  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

1.8  

Switching Characteristics  

Turn-on Delay Time  

–

–

–

–

9

–

–

–

–

ns  

ns  

ns  

ns  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

V

DD

= -15V, I

D

= -10A,  

V

GS

=-10V, R

GEN

=2.5Ω  

13  

48  

20  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

–

–

-9.8  

-40  

-1.2  

–

A

A

Current  

I

SM  

V

SD  

trr  

Maximum Pulsed Drain to Source Diode Forward Current  

Drain to Source Diode Forward  

V

GS

=0V, I

S

= -15A  

Voltage  

-0.8  

64  

25  

V

Reverse Recovery Time  

Reverse Recovery Charge  

T

J

=25

℃

,  

ns  

nC  

V

DD

= -24V,I

F

=-2.8A,  

dI/dt=-100A/μs  

Qrr  

–

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  

2.

EAS condition: T

J

=25

℃

, V

GS

=10V, R

G

=25Ω, L=0.5mH, I

AS

=-12.7A  

3.  

Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  

2/6  

P-Channel Enhancement Mode  

P+  

TM10V03S  

Mosfet  

Typical Performance Characteristics  

Figure1:

Output Characteristics  

Figure 2:

Typical Transfer Characteristics  

-I

D

(A)  

50  

-I

D

(A)  

50  

40  

-4.5V  

-4V  

-10V  

T

J

=-55

℃

 

25

℃  

40  

30  

20  

-3V  

-2V  

30  

20  

125

℃  

10  

0

10  

0

V

GS

=-1V  

-V

DS

(V)  

-V

GS

(V)  

1.5 2.0 2.5 3.0 3.5 4.0  

0

0.5  

1.0  

1.5  

2.0  

2.5  

18  

25  

0

0.5 1.0  

4.5  

Figure 3:

On-resistance vs. Drain Current  

Figure 4

: Body Diode Characteristics  

-I

S

(A)  

10  

R

DS(ON)

(mΩ)  

30  

25  

20  

15  

V

GS

=-4.5V  

T

J

=150

℃  

T

J

=-25

℃  

T

J

=-50

℃  

1

V

GS

=-10V  

10  

5

-I

D

(A)  

-V

SD

(V)  

0.6 0.8  

0

0.1  

0.0  

0

3

6

9

12  

15  

0.2  

0.4  

1.0  

1.2  

1.4  

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

-V

GS

(V)  

C(pF)  

10

4  

10  

8

V

DS

=-15V  

I

D

=-5A  

C

iss  

6

10

3  

4

C

oss  

C

rss  

2

0

-V

DS

(V)  

15  

Q

g

(nC)  

10

2  

0

5

10  

15  

20  

20  

25  

30  

0

5

10  

3/6  

P-Channel Enhancement Mode  

P+  

TM10V03S  

Mosfet  

Figure 8:

Normalized on Resistance vs.  

Junction Temperature  

R

DS

(on)  

Figure 7:

Normalized Breakdown Voltage vs.  

Junction Temperature  

V

BR(DSS)  

2.5  

1.3  

1.2  

2.0  

1.5  

1.1  

1.0  

1.0  

0.5  

0.9  

0

Tj (

℃

)  

Tj (

℃

)  

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 9:

Maximum Safe Operating Area  

Figure 10:

Maximum Continuous Drain Current  

vs. Ambient Temperature  

-I

D

(A

)

 

-I

D

(A

)  

12  

10

3  

10

2  

10

1  

Limited byR

DS(on)  

10  

8

6

4

10μs  

100μs  

10

0  

1m  

s

T

C

=25

℃  

2

0

Single pulse  

DC  

10

-1  

-V

DS

(V)  

1

T

A

(

℃

)  

0.01  

0.1  

10  

100  

0

25  

50  

75  

100  

125  

150  

Figure.11:

Maximum Effective Transient  

Thermal Impedance, Junction-to-Case  

Zth

J-C

(

℃

/W)  

10

2  

10

1  

10

0  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

D=0.05  

D=0.02  

D=0.01  

10

-1  

10

-2  

Notes:  

Single pulse 1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJC

+T

C  

T

P

(s)  

10

-1  

10

-4  

10

-3  

10

-2  

10

0  

10

1  

10

2  

4/6  

P-Channel Enhancement Mode  

P+  

TM10V03S  

Mosfet  

Test Circuit  

5/6  

Package Mechanical Data:SOP-8L  

6/6