Tritech-MOS-TM15N10YS
| Part # | Tritech-MOS-TM15N10YS |
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TM15N10YS
N
–
Channe
l
E
nhancement Mosfet
General Description
General Features
• Low R
DS(ON)
V
DS
= 100V
I
D
=15A
• RoHS and Halogen-Free Compliant
R
DS(ON)
@ V
GS
=10V
=
(Typ.)
7
5
m
Ω
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
Y:TO-251S-3L
D
S
D
G
Marking: 15N10
Absolute Maximum Ratings (TC=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
100
±
20
15
V
GS
Gate-Sou
r
ce Voltage
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
8
A
3
A
2.4
20
A
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
6.1
mJ
A
I
AS
10
30
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
W
W
℃
℃
Total Power Dissipation
3
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
6.6
1/5
TM15N10YS
N
–
Channe
l
E
nhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
GS
=0V, I
D
=250μA
V
DS
=100V, V
GS
=0V,
V
DS
=0V, V
GS
=±20V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
100
–
–
–
–
V
–
–
1.0
μA
nA
I
GSS
±100
On Characteristics
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
V
GS(th)
R
DS(on)
Gate Threshold Voltage
1.0
1.5
75
96
2.5
110
140
V
–
–
mΩ
mΩ
Static Drain-Source on-Resistance
note3
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
765
38
33
18
2.5
4
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
f=1.0MHz
C
oss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
g
V
DS
=50V, I
D
=2A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Switching Characteristics
Turn-on Delay Time
–
–
–
–
7.5
6
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=50V, I
D
=3A,
R
G
=1.8Ω, V
GS
=10V
21
9
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
10
40
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=10A
–
V
Voltage
Body Diode Reverse Recovery Time
21
22
ns
nC
Body Diode Reverse Recovery
Charge
I
F
=3A, dI/dt=100A/μs
Qrr
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.
EAS condition : T
J
=25
℃
,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25Ω,I
AS
=4A
3.
Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
2/5
TM15N10YS
N
–
Channe
l
E
nhancement Mosfet
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
I
D
(A)
20
15
20
15
10V
4.5V
4V
125
℃
3V
10
5
10
5
25
℃
2V
V
DS
(V)
6
V
GS
(V)
0
0
0
2
4
8
10
12
0
1.0
2.0
3.0
4.0
5.0
6.0
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
R
DS(ON)
(mΩ)
S
I (A)
120
110
100
90
10
3
10
2
T
J
=125
℃
V
V
GS
=4.5V
GS
=10V
J
T =25
℃
10
1
10
0
80
70
V
GS
=0V
I
D
(A)
4
V
SD
(V)
1.0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0
2
6
8
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
10
4
C(pF)
V
GS
(V)
10
8
V
DS
=50V
I
D
=2A
10
3
10
2
10
1
C
iss
6
4
C
oss
C
rss
2
0
V
DS
(V)
Q
g
(nC)
9
0
3
6
12
15
18
0
10
20
30
40
50
3/5
TM15N10YS
N
–
Channe
l
E
nhancement Mosfet
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
2.0
1.5
1.1
1.0
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
Figure 9:
Maximum Safe Operating Area
vs. Case Temperature
I
D
(A
)
I
D
(A
)
12
10
10
2
10
1
10
0
10μs
8
6
4
100μs
1ms
Limited by R
DS(on)
10ms
100ms
10
-1
10
-2
Tc=25
℃
DC
Single pulse
2
0
T
c
(
℃
)
V
DS
(V)
10
0.1
1
100
0
25
50
75
100
125
150
175
Figure.11:
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
10
-2
10
-3
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
T
P
(s)
10
-2
-6
10
-5
10
-4
10
-3
10
-1
10
0
10
1
10
.
4/5
Package Information:TO-251S-3L
UNIT
：
mm
max
SYMBOL
min
nom
A
b
2.20
0.50
0.45
6.50
5.10
5.9
2.40
0.85
0.60
6.70
5.50
6.20
2.38
12.40
5.3
C
0.50
D
D1
E
e
2.18
11.00
4.8
2.29
L
L1
L2
3.5
4.2
5/5
