Tritech-MOS-TM20H04DF
| Part # | Tritech-MOS-TM20H04DF |
Download  | Tritech-MOS-TM20H04DF |
N
TM20H04DF
N+
-Channel
Enhancement Mosfet
General Description
Product Summary
• Low R
DS(ON)
V
DS
= 40V
I
D
=20A
• RoHS and Halogen-Free Compliant
mΩ
@ V
GS
=10V
(
Typ
.)
R
DS(ON)
=17
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
DF:DFN3x3_8L
Marking:4886
(T =25°C Unless Otherwise Noted)
A
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
40
±
20
V
GS
V
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
33
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
21
A
55
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
22.1
10
mJ
A
I
AS
Total Power Dissipation
4
31.3
2
W
W
℃
℃
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
60
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
R
θJC
—
5.5
1/5
N
TM20H04DF
N+
-Channel
Enhancement Mosfet
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
40
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=10V , I
D
=6A
17
26
33
2.5
1
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=4.5V , I
D
=5A
25
V
GS
=V
DS
, I
D
=250uA
1.5
—
V
DS
=32V , V
GS
=0V , T
J
=25
℃
V
DS
=32V , V
GS
=0V , T
J
=55
℃
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=12A
30
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.1
3.8
2.8
1.1
12.2
5.3
18
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=32V , V
GS
=4.5V , I
D
=6A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=20V , V
GS
=10V , R
G
=3.3
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
I
D
=1A
—
9
—
C
iss
C
oss
C
rss
Input Capacitance
376
240
19
—
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
—
pF
—
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
20
Unit
A
I
S
V
SD
t
rr
—
—
1.2
—
V
—
20
nS
nC
Q
rr
I
F
=6A , dI/dt=100A/µs , T
J
=25
℃
—
35
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=10A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/5
N
TM20H04DF
N+
-Channel
Enhancement Mosfet
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
3/5
N
TM20H04DF
N+
-Channel
Enhancement Mosfet
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
SINGLE
0.01
T
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
2
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4/5
_
8L
:
Package Mechanical Data DFN3x3
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
5/5
