Tritech-MOS-TM2301AI

-Channel  

TM2301AI  

P

Enhancement Mosfet  

General Description  

General Features  

V

DS

=-20V,I

D

=-3.0A  

• Low R

DS(ON)  

• RoHS and Halogen-Free Compliant  

R

DS(ON)

=

6

2 m

W

(

ty

p

.

)

@

V

GS

=-

4.5V  

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

I:SOT-23  

D

S

G

Marking: 2301 OR A1SHB  

Absolute Maximum Ratings

：

(T

C

=25

℃

unless otherwise noted)  

Symbol  

V

DS  

Parameter  

Ratings  

-20  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

GS  

±

12  

-3.0  

I

D  

Continuous Drain Current  

A

I

DM  

Pulsed Drain Current

1  

-10  

P

D  

Power Dissipation  

1

W

T

J

, T

STG  

Operating and Storage Junction Temperature Range  

-55 to +150  

℃

Thermal Characteristics

：

 

Symbol  

R

Ɵ

JA  

Parameter  

Thermal Resistance,Junction to Ambient

1  

Max  

Units  

℃

/W  

125  

1/5  

-Channel  

TM2301AI  

P

Enhancement Mosfet  

Electrical Characteristics

：

(T

C

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Conditions  

Min  

Typ  

Max Units  

Off Characteristics  

Drain-Sourtce Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage Current  

-20  

—  

—  

—  

—  

—  

-1  

V

V

GS

=0V,I

D

=-250

μ

A  

V

GS

=0V, V

DS

=-20V  

V

GS

=

±

12V, V

DS

=0A  

BV

DSS  

μ

A  

nA  

I

DSS  

I

GSS  

—  

±

100  

On Characteristics  

V

GS(th)  

GATE-Source Threshold Voltage  

Drain-Source On Resistance  

Forward Transconductance  

-0.4  

—  

-0.7  

62  

78  

8

-1  

76  

98  

—  

V

m

Ω  

S

V

GS

=V

DS

, I

D

=-250

μ

A  

V

GS

=-4.5V,I

D

=-3A  

V

GS

=-2.5V,I

D

=-3A  

V

DS=

-5V, I

D

=-2A  

R

DS(ON)  

—  

—  

G

FS  

Dynamic Characteristics  

Input Capacitance  

—  

—  

—  

480  

83  

—  

—  

—  

C

iss  

C

oss  

C

rss  

V

DS

=-10V, V

GS

=0V, f=1MHz  

Output Capacitance  

pF  

Reverse Transfer Capacitance  

54  

Switching Characteristics  

Turn-On Delay Time  

—  

—  

—  

—  

—  

—  

—  

11  

52  

17  

10  

4

—  

—  

ns  

ns  

ns  

ns  

nC  

nC  

nC  

t

d(on)  

t

r  

t

d(off)  

t

f  

Rise Time  

V

DD

=-10V,I

D

=-1A,  

R

L

=2.8

Ω

 

Turn-Off Delay Time  

Fall Time  

—  

—  

V

GS

=-4.5V,R

G

=6

Ω  

—  

—  

T

o

tal Gate Charge  

Gate-Source Charge  

Gate-Drain

“

Miller

”

Charge  

Q

g  

V

GS

=-4.5V, V

DS

=-10V,  

I

D

=-3  

0.7  

1.2  

Q

gs  

Q

gd  

—  

Drain-Source Diode Characteristics  

Source-Drain Diode Forward Voltage

1

V

GS

=0V,I

S

=-3A  

—  

—  

—  

—  

-1.2  

-3  

V

A

V

SD  

I

SD  

Source-Drain Current(Body Diode)  

Notes:  

1. Repetitive Rating: Pulse width limited by maximum junction temperature.  

2/5  

-Channel  

TM2301AI  

P

Enhancement Mosfet  

Figure1. Power Dissipation  

Figure2. Drain Current  

T

J

-Junction Temperature

(℃)  

T

J

-Junction Temperature

(℃)  

Figure3. Output Characteristics  

Figure4. Transfer Characteristics  

–

Vds Drain-Source

V

o

ltage (V)  

-Vgs Gate-Source

V

o

ltage (V)  

Figure5. Capacitance  

Figure6. R

DS(ON)

vs Junction Temperature  

-Vgs Gate-Source Voltage (V)  

3/5  

-Channel  

TM2301AI  

P

Enhancement Mosfet  

Figure7. Max BV

DSS

vs Junction Temperature  

Figure8. V

GS(th)

vs Junction Temperature  

Figure9. Gate Charge Waveforms  

Figure10. Maximum Safe  

Figure11. Normalized Maximum Transient Thermal Impedance  

Square Wave Pluse Duration(sec)  

4/5  

Package Mechanical Data:SOT-23  

Dimensions in Millimeters  

Symbol  

MIN.  

MAX.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

A

A1  

A2  

b

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

c

D

E

E1  

e

0.950TYP  

e1  

L

1.800  

2.000  

0.550REF  

L1  

θ

0.300  

0°  

0.500  

8°  

5/5