Tritech-MOS-TM2301BI
| Part # | Tritech-MOS-TM2301BI |
Download  | Tritech-MOS-TM2301BI |
-Channel
P
TM2301BI
Enhancement Mosfet
General Description
General Features
• Low R
DS(ON)
V
DS
= -20V I
D
=-2.3A
• RoHS and Halogen-Free Compliant
(
typ
.)
mΩ
@ V
GS
=-4.5V
R
DS(ON)
=
90
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
I
:
S
O
T
–
2
3
D
S
G
Marking:2301 OR A1SHB
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
-20
±12
V
V
Drain Current-Continuous
-2.3
A
Drain Current -Pulsed
(Note 1)
-10
A
I
DM
P
D
Maximum Power Dissipation
0.7
W
T ,T
STG
J
Operating Junction and Storage Temperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
-55 To 150
178
℃
℃
/W
R
θJA
1/5
-Channel
P
Enhancement Mosfet
TM2301BI
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Condition
Min Typ
Max Unit
BV
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=0V I
D
=-250μA
V
DS
=-20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-2 A
V
GS
=-2.5V, I
D
=-1.8A
V
DS
=-5V,I
D
=-2A
-20
–
V
I
DSS
–
–
–
–
-1
μA
I
GSS
±100 nA
V
GS(th)
-0.5 -1.0
-1.5
90 102
mΩ
103 135 mΩ
V
–
–
4
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
Drain-Source On-State Resistance
g
FS
Forward Transconductance
Input Capacitance
–
–
S
C
lss
290
60
34
10
5.0
21
7
–
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
C
oss
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
–
C
rss
–
t
d(on)
–
t
r
–
V
DD
=-10V, R
L
=5Ω V
GS
=-
4.5V,R
GEN
=3Ω
t
d(off)
t
f
Turn-Off Delay Time
Turn-Off Fall Time
–
–
Q
g
Q
gs
Q
gd
Total Gate Charge
3.0
0.5
0.8
–
–
V
DS
=-10V,I
D
=-2A,
V
GS
=-4.5V
Gate-Source Charge
–
–
Gate-Drain Charge
V
SD
Diode Forward Voltage
(Note 3)
V
GS
=0V,I
S
=-2A
-1.2
Notes:
1
、
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
、
Surface Mounted on FR4 Board, t ≤ 10 sec.
3
、
Pulse
T
e
st: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4
、
Guaranteed by design, not subject to production
2/5
-Channel
P
Enhancement Mosfet
TM2301BI
Typical Characteristics
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Power Dissipation
Figure 2 Drain Current
-Vds Drain-Source Voltage (V)
-I
D
– Drain Current (A)
Figure 3 Output Characteristics
Figure 4 Drain-Source On-Resistance
-Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 5 Transfer Characteristics
Figure 6 Drain-Source On-Resistance
3/5
-Channel
P
Enhancement Mosfet
TM2301BI
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 7 Rdson vs Vgs
Figure 8 Capacitance vs Vds
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 9 Gate Charge
Figure 10 Source- Drain Diode Forward
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
4/5
Package Mechanical Data:SOT-23
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
e1
L
1.800
2.000
0.550REF
L1
θ
0.300
0°
0.500
8°
5/5
