Tritech-MOS-TM2302BI
| Part # | Tritech-MOS-TM2302BI |
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TM2302BI
-Channel Enhancement Mosfet
N
Product Summary
General Description
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
V
DS
= 20V
I
D
=5.0A
(
Typ
.)
R
DS(ON)
=22 mΩ
@ V
GS
=4.5V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
I
:
S
O
T
–
2
3
D
S
G
Marking: A2SHB
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
2 0
±
12
V
GS
Gate-Sou
r
ce Voltage
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
5.0
A
1.8
A
12
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1.05
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Unit
℃
/W
℃
/W
Symbol
R
θ
JA
Parameter
Typ.
Max.
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
—
—
112
—
R
θ
JC
1/5
TM2302BI
-Channel Enhancement Mosfet
N
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 uA
V
DS
=20 V, V
GS
= 0 V
V
DS
= 16V, T
C
= 125
℃
V
GS
= 10V, V
DS
= 0 V
V
GS
= -10 V, V
DS
= 0 V
20
—
—
—
—
—
—
—
1
V
uA
uA
nA
nA
I
DSS
Zero Gate Voltage Drain Current
—
10
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
—
100
-100
—
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 uA
0.45
–
1.1
V
V
GS
= 4.5 V, I
D
=3.5A
V
GS
= 2.5 V, I
D
=2.0A
—
–
22
30
29
Static Drain-Source
On-Resistance
R
DS(on)
mΩ
37
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
180
37
–
–
–
pF
pF
pF
V
DS
= 10V, V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
34
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
4.5
31
—
—
—
—
—
—
—
ns
ns
V
GS
=5 V, V
DS
=10V, I
D
=3A,
R
G
= 6 Ω ,R
L
= 2.7 Ω
12
ns
4.0
6.23
6
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= 10 V, I
D
=3A,
V
GS
= 5V
0.5
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
—
—
—
—
—
—
3.5
10.5
1.2
A
A
V
I
SM
V
SD
Drain to Source Diode Forward
Voltage,V
GS
= 0V, I
SD
=3.5A,T J = 25
℃
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
2/5
TM2302BI
-Channel Enhancement Mosfet
N
Typical Performance Characteristics
N- Channel Typical Characteristics
4
5
4
2.0V
1.5V
T
C
=25
℃
impulse=250uS
2.5V
3
2
10V
25
℃
3
2
1.2V
1.0V
1
0
1
0
0
1
2
3
4
5
0
1
2
3
4
5
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
80
3.5
2.5
Note
：
T
J
=25
℃
V
GS
= 0V
60
V
GS
=2.5V
V
GS
=4.5V
25
℃
1.5
40
20
0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
V F ,Forward Voltage [V]
I D – Drain Current (A)
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On-Resistance Variation
vs
Drain Current and Gate Voltage
5
C
iss
4
C
oss
C
rss
3
2
1
C iss = C gs + C gd (C ds = shorted)
Note:
C oss = C ds + C gd
V
GS
=0
V
,
f=1Mhz
C rss = C gd
0
0
1
2
3
4
5
V
DS
Drain-to-Source Voltage (V)
Qg Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3/5
TM2302BI
-Channel Enhancement Mosfet
N
N- Channel Typical Characteristics
(Continued)
1
0.75
0.6
0.8
0.6
0.4
0.2
0.45
0.3
0.1
0
0
0
2
4
6
8
10
12
0
3
6
9
12
15
Vgs Gate-Voltage (V)
Vgs Gate-Voltage (V)
Figure 7.
Breakdown Voltage Variation
vs
Gate-Voltage
Figure 8. On-Resistance Variation
vs Gate Voltage
100
10
5
4
10μs
100μs
1ms
3
2
10ms
1
100ms
Limited by R
DS(on)
DC
0.1
1
0
T
C
=25
℃
Note: T
C
=25
℃
,
V
DS
(V)
T
J
=150
℃
,Single pulse
0.01
0
25
50
75
100
125
150
0.1
1
10
20
100
Vds Drain-Source Voltage (V)
T J -Junction Temperature(
℃
)
Figure 10. Maximum
PContinuous Drain
Currentvs Case Temperature
Figure 9. Maximum Safe Operating Area
10
0
-1
10
D
=
0. 5
D
=
0. 2
D=0.1
t1
t2
D=0.05
D=0.02
D=0.01
10
-2
10
-3
Notes:
Single pulse 1.Dty facto
r
D
=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
T
P
(s)
C
10
-5
10
-4
10
-3
10
-2
10
1
10
2
3
10
10
-6
Square Wave Pluse Duration(sec)
Figure 11. Transient Thermal Response Curve
4/5
Package Mechanical Data SOT-23
:
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
5/5
