Tritech-MOS-TM23N03DF
| Part # | Tritech-MOS-TM23N03DF |
Download  | Tritech-MOS-TM23N03DF |
-Channel
N
Enhancement Mosfet
TM23N03DF
General Description
General Features
• Low R
DS(ON)
V
DS
= 30V
I
D
=23A
• RoHS and Halogen-Free Compliant
(
typ
.
)
R
DS(ON)
= 16 mΩ
@ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
DF:DFN3x3_8L
Marking: 23N03 OR 7410
(T
A
= 25
°
C Unless Otherwise Noted)
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Unit
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
V
±
20
7
T
A
=25
°
C
a
I
D
Continuous Drain Current (V
GS
=10V)
Pulsed Drain Current (V
GS
=10V)
Continuous Drain Current (V
GS
=10V)
Diode Continuous Forward Current
Avalanche Current, Single pulse
T
A
=70
°
C
5.6
a
I
DM
28
T
C
=25
°
C
T
C
=70
°
C
23
c
I
D
A
19
a
I
S
1.5
L=0.1mH
L=0.5mH
L=0.1mH
L=0.5mH
13
b
I
AS
7
8.45
12.25
150
-55 to 150
1.56
1
b
E
AS
Avalanche Energy, Single pulse
mJ
T
J
Maximum Junction
T
e
mperature
Storage
T
e
m
p
e
r
a
t
ure Range
°
C
T
STG
T
A
=25
°
C
a
P
D
Maximum Power Dissipation
Maximum Power Dissipation
T
A
=70
°
C
W
T
C
=25
°
C
17.8
1
1
.4
50
c
P
D
T
C
=70
°
C
t
£
10s
a
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
R
q
JA
Steady State
Steady State
80
°
C/W
c
7
R
q
JC
Note a
：
Su
r
face Mounted on 1in
2
pad area, t
£
10sec.
o
o
.
b
：
UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T
j
=25 C)
c
：
The power dissipation P
D
is based on T
J(MAX)
= 150
o
C, and it is useful for reducing junction-to-case thermal
resistance (
R
q
JC
) when additional heat sink is used.
1/9
-Channel
N
Enhancement Mosfet
TM23N03DF
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
30
–
–
–
1
V
V
GS
=0V, I
DS
=250
m
A
V
DS
=24V, V
GS
=0V
–
I
DSS
Zero Gate Voltage Drain Current
m
A
T
J
=85
°
C
–
–
30
2.5
±
100
21
–
V
GS(th)
G
a
t
e T
h
r
eshold Voltage
I
GSS
G
a
t
e Leakage Current
1.0
1.8
–
V
V
DS
=V
GS
, I
DS
=250
m
A
V
GS
=
±
20V, V
DS
=
0
V
V
GS
=10V, I
D
S
=
8
A
–
–
–
–
nA
16
25.5
21
d
R
DS(ON)
Drain-Source On-state Resistance
T
J
=125
°
C
m
W
V
GS
=4.5V, I
DS
=5A
I
SD
=1A, V
GS
=0V
26
Diode Characteristics
d
V
SD
Diode Forward Voltage
Reverse Recovery Time
Charge Time
–
–
–
–
–
0
.
7
5
12
1.1
V
e
t
rr
–
–
–
–
t
a
t
b
6.2
5.8
3.7
ns
nC
I
SD
=8A, dl
SD
/dt=100A/
m
s
Discharge Time
e
Q
rr
Reverse Recovery Charge
D
y
namic Characteristics
e
R
G
C
iss
C
o
s
s
C
rss
t
d
(
O
N
)
t
r
G
a
t
e Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
1
300
50
30
–
1.5
415
70
40
5.5
9
3
550
100
60
9
W
Input Capacitance
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
O
u
t
p
ut Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
pF
V
DD
=
1
5V, R
L
=15
W
,
I
DS
=1A, V
GE
N
=10V,
R
G
=
6
W
–
18
25
7
ns
t
d
(
OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
e
–
14
3.6
–
V
DS
=15V, V
GS
=4.5V,
I
DS
=8A
Q
g
Total Gate Charge
–
3.8
5.5
Q
g
Total Gate Charge
–
–
–
–
8
13
0.7
1.8
2.1
nC
Q
gth
Q
gs
Q
gd
Threshold Gate Charge
G
a
t
e
–
S
ource Charge
G
a
t
e
–
Drain Charge
0.4
1.1
1.6
V
DS
=15V, V
GS
=10V,
I
DS
=8A
Note d
：
Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
Note e
：
Guaranteed by design, not subject to production testing.
2/9
-Channel
N
Enhancement Mosfet
TM23N03DF
Typical Operating Characteristics
Power Dissipation
Drain Current
2.0
24
18
1.5
1.0
0.5
12
6
T
A
=25
o
C,V
G
=10V
T
A
=25
o
C
0.0
0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (
°
C)
T
j
– Junction Temperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
2
1
100
10
Duty =
0.5
it
m
i
L
)
0.2
n
o
(
s
d
R
0.1
0.05
300
m
s
1
1ms
0.1
0.02
10ms
0.01
100ms
0.1
1s
Single Pulse
DC
Mounted on 1in
2
pad
q
JA
: 50
o
C/W
T
A
=25
o
C
R
0.01
0.01
1E-4 1E-3 0.01
0.1
1
10
100
0.01
0.1
1
10
100 300
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
3/9
-Channel
N
Enhancement Mosfet
TM23N03DF
Power Dissipation
Drain Current
28
20
16
12
8
24
20
16
12
8
4
4
T
C
=25
o
C,V
G
=10V
T
C
=25
o
C
20 40 60 80
100 120 140 160
0
0
0
20 40 60 80
100 120 140 160
0
T
j
– Junction Temperature (
°
C)
T
j
– Junction Temperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
3
1
100
10
1
Duty = 0.5
0.2
100
m
s
0.1
0.1
0.01
1E-3
1E-4
0.05
0.02
0.01
1ms
10ms
DC
Single Pulse
T
C
=25
o
C
R
q
JC
:7
o
C/W
0.1
0.01
0.1
1
10
100
1E-6
1E-5
1E-4
1E-3
0.01 0.05
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
4/9
-Channel
N
Enhancement Mosfet
TM23N03DF
Output Characteristics
Drain-Source On Resistance
30
25
20
15
10
5
36
32
28
24
20
16
12
8
V
GS
=4,5,6,7,8,9,10V
3.5V
V
GS
=4.5V
V
GS
=10V
3V
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
40
35
30
25
20
15
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=8A
I
DS
=250
m
A
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
5/9
-Channel
N
Enhancement Mosfet
TM23N03DF
Drain-Source On Resistance
Source-Drain Diode Forward
30
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= 10V
I
DS
= 8A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 17m
W
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction Temperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
600
500
400
300
200
100
0
10
Frequency=1MHz
V
DS
=15V
I
DS
=8A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
15
Crss
5
0
1
2
3
4
5
6
7
8
0
10
20
25
30
V
DS
– Drain – Source Voltage (V)
Q
G
– Gate Charge (nC)
6/9
-Channel
N
Enhancement Mosfet
TM23N03DF
Transfer Characteristics
30
25
20
15
10
5
T
j
=125
o
C
T
j
=25
o
C
1.0
T
j
=-55
o
C
0
0.0
0.5
1.5
2.0
2.5
3.0
V
GS
– Gate-Source Voltage (V)
7/9
-Channel
N
Enhancement Mosfet
TM23N03DF
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
W
t
AV
Switching Time Test Circuit and Waveforms
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
8/9
_
Package Mechanical Dat
a
:
DFN3x3
8L
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
9/9
