Tritech-MOS-TM3010NF
| Part # | Tritech-MOS-TM3010NF |
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P-Channel Enhancement Mode Mosfet
N+
TM3010NF
General Description
General Features
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
N Channel
V
DS
=
30
V, I
D
=30A
Ω
(
typ
.
)
@ V
GS
=10V
R
DS(ON)
=9.5m
Applications
P Channel
V
DS
= -30V,I
D
= –
20A
• Load switch
• PWM
(
typ
.)
R
DS(ON)
=21m
Ω
@ V
GS
=-10V
100% UIS Tested
100% R
g
Tested
NF:DFN5x6-8L
Pin 1
Pin 1
Marking: 30G30 OR 3030
(T
A
=25°C Unless Otherwise Noted)
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
N-Ch
30
P-Ch
-20
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
±
20
30
±
20
I
D
@Ta=25
℃
I
D
@Ta=100
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
-30
A
15
-16
A
46
-40
A
EAS
Single Pulse Avalanche Energy
3
Total Power Dissipation
4
28
66
mJ
W
℃
℃
15
21.3
P
D
@T
C
=25
℃
T
STG
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
48
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
5
1/10
TM3010NF
P-Channel Enhancement Mode Mosfet
N+
N-Channel Electrical Characteristics
T =25
℃
unless otherwise s ecified
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
GS
=0V, I
D
=250μA
V
DS
=30V, V
GS
=0V,
V
DS
=0V, V
GS
=±20V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
30
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
R
DS(on)
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
Gate Threshold Voltage
1.0
1.5
9.5
16
2.5
13
V
–
–
Static Drain-Source on-Resistance
note3
mΩ
22.5
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
633
120
99
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=15V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
15
V
DS
=15V, I
D
=10A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
4.7
3.6
Switching Characteristics
Turn-on Delay Time
–
–
–
–
5
8
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=30V,I
D
=18A,
R
GEN
=3Ω, V
GS
=10V
21
7
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
30
72
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=18A
–
V
Voltage
Body Diode Reverse Recovery Time
7
ns
nC
I
F
=18A,dI/dt=100A/μs
Body Diode Reverse Recovery
Charge
Qrr
5.9
–
Note :
1.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating . The test condition isV
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=20A
4.
The power dissipation is limited by 150
℃
junctiontemperature
5.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
P-Channel Enhancement Mode Mosfet
N+
TM3010NF
P-Channel Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
(BR)DSS
I
DSS
V
GS
=0V, I
D
= -250μA
V
DS
= -30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
-30
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -5A
-1.0
-1.6
21
-2.5
25
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
31
40
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
–
–
–
–
–
–
1240
151
138
24
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -15V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
= -15V, I
D
= -6A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain(“Miller”) Charge
3.7
4.8
Switching Characteristics
Turn-on Delay Time
–
–
–
–
11
5.5
3.5
4.6
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
= -15V, I
D
= -10A,
V
GS
= -10V, R
GEN
=3Ω
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
-20
-40
-1.2
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
= -10A
Voltage
V
SD
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.
EAS condition: T
J
=25
℃
, V
DD
=-15V, V
G
=-10V, R
G
=25Ω, L=0.1mH, I
AS
= -27A
3.
Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
TM3010NF
N+
P-Channel Enhancement Mode Mosfet
Typical Performance Characteristics-N
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
50
I
D
(A)
50
10V
40
30
20
10
0
40
4.5V
3.5V
30
20
3V
125
℃
25
℃
10
V
GS
=2.5V
4.0
V
DS
(V)
V
GS
(V)
0
0
1.0
2.0
3.0
5.0
0
1
2
3
4
5
6
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
R
DS(ON)
(mΩ)
I
S
(A)
16
14
12
10
1000
V
GS
=4.5V
100
25
℃
150
℃
10
1
V
GS
=10V
8
6
V
SD
(V)
1.0
I
D
(A)
9
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0
3
6
12
15
18
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
V
DS
=15V
I
D
=6A
10000
1000
100
8
6
C
iss
C
oss
C
rss
4
2
V
DS
(V)
15
Q
g
(nC)
0
10
0
0
4
8
12
16
20
5
10
20
25
30
TM3010NF
N+
P-Channel Enhancement Mode Mosfet
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8:
Normalized on Resistance vs.
Junction Temperature
R
DS
(on)
V
BR(DSS)
1.3
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
I
D
(A
)
I
D
(A
)
14
10
3
10
2
Limited by R
DS(on)
12
10
8
10μs
100μs
10
1
1ms
6
4
10ms
10
0
100ms
DC
T
C
=25
℃
Single pulse
2
0
T
C
(
℃
)
75 100
10
-1
0.01
V
DS
(V)
1
0.1
10
100
0
25
50
125
150
175
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
10
-1
D=0.5
D=0.2
D=0.1
D=0.0
D=0.02
D=0.01
t1
t2
10
-2
10
-3
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
-1
10
*Z
0
J
=P
DM thJC
+T
C
-6
-3
T
P
(s)
-2
10
-5
10
-4
10
1
10
10
10
10
P-Channel Enhancement Mode Mosfet
N+
TM3010NF
Test Circuit-N
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Wavefor
P-Channel Enhancement Mode Mosfet
N+
TM3010NF
Typical Performance Characteristics-P
Figure1:
Output Characteristics
Figure 2:
Typical Transfer Characteristics
-I
D
(A)
25
-I
D
(A)
25
-10V
T
A
=-
20
20
55
℃
-4.5V
-3V
25
℃
15
10
15
10
5
-2V
5
0
V
GS
=-1V
-V
DS
(V)
-V
GS
(V)
1.5 2.0 2.5 3.0 3.5 4.0
0
0
1.0
2.0
3.0
4.0
5.0
24
25
0
0.5 1.0
4.5
1.4
30
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
Figure 4
: Body Diode Characteristics
-I
S
(A)
40
35
30
25
10
V
GS
=-4.5V
T
J
=150
℃
T
J
=-25
℃
T
J
=-50
℃
1
20
15
10
V
GS
=-10V
-V
SD
(V)
0.6 0.8
-I
D
(A)
12
0.1
0.0
0
4
8
16
20
0.2
0.4
1.0
1.2
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
10
8
V
DS
=-15V
I
D
=-6A
10
4
10
3
C
iss
6
C
oss
C
rss
4
10
2
10
1
2
0
Q
g
(nC)
-V
DS
(V)
15
0
5
10
15
20
0
5
10
20
25
P-Channel Enhancement Mode Mosfet
N+
TM3010NF
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
R
DS
(on)
V
BR(DSS)
1.3
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
Figure 9:
Maximum Safe Operating Area
vs. Case Temperature
-I
D
(A
)
-I
D
(A
)
12
10
2
10
1
10
0
10
10μs
100μs
1m
8
6
4
s
10ms
100
ms
DC
Limited by R
DS(on)
Tc=25
℃
10
-1
10
-2
2
0
Single pulse
Tc (
℃
)
-V
DS
(V)
1
0.01
10
0.1
100
0
25
50
75
100
125
150 175
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Case
Zth
J-
c(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
D=0.1
t1
t2
10
-1
D=0.05
D=0.02
D=0.01
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJ
c+T
T
P
(s)
10
-1
10
-2
10
-4
10
-3
10
-2
10
0
10
1
10
2
Package Mechanical Data:DFN5x6-8L
10/10
