Tritech-MOS-TM3014NF
| Part # | Tritech-MOS-TM3014NF |
Download  | Tritech-MOS-TM3014NF |
P-Channel Enhancement Mode Mosfet
N+
TM3014NF
General Description
General Features
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
N Channel
V
DS
=
30
V, I
D
=16A
@ V
GS
=10V
R
DS(ON)
=14m
(
typ
.)
Ω
Applications
P Channel
V
DS
= -30V,I
D
= –
14A
• Load switch
• PWM
R
DS(ON)
=25m
Ω
(
typ
.
)
@ V
GS
=-10V
100% UIS Tested
100% R
g
Tested
NF:DFN5x6-8L
Pin 1
Pin 1
Marking: 30G20 OR 3020
(T
A
=25°C Unless Otherwise Noted)
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
N-Ch
30
P-Ch
-30
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
±
20
16
±
20
I
D
@Ta=25
℃
I
D
@Ta=100
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
-14
A
10
-10
A
46
-40
A
EAS
Single Pulse Avalanche Energy
3
Total Power Dissipation
4
28
66
mJ
W
℃
℃
15
21.3
P
D
@T
C
=25
℃
T
STG
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
45
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
5
1/8
P-Channel Enhancement Mode Mosfet
N+
TM3014NF
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
△
BV
DSS
/
△
T
J
BVDSS Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=10A
0.023
14
—
V/
℃
20
25
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=6A
20
V
GS(th)
Gate Threshold Voltage
1.5
-4.2
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=10A
14
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.3
5
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=20V , V
GS
=4.5V , I
D
=10A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
1.11
2.61
7.7
46
—
—
—
V
DD
=12V , V
GS
=10V , R
G
=3.3
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
I
D
=6A
11
—
3.6
416
62
—
C
iss
C
oss
C
rss
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
—
pF
51
—
Diode Characteristics
S
y
mbol
Parameter
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Conditions
Min.
—
Typ.
—
Max.
16
Unit
A
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
30
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=12.7A
4.The power dissipation is limited by 150
℃
junction temperature
5
.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total powe
r
d
issipation.
2/8
P-Channel Enhancement Mode Mosfet
N+
TM3014NF
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-30
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
J
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-8A
-0.021
25
—
V/
℃
—
30
35
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-6A
—
30
V
GS(th)
Gate Threshold Voltage
-1.0
—
1.5
-4.2
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
1
I
DSS
Drain-Source Leakage Current
uA
—
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
nA
S
±
100
V
DS
=-5V , I
D
=-8A
—
12.6
15
—
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
—
—
—
—
—
—
—
—
—
—
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
9.8
2.2
3.4
16.4
20.2
55
V
DS
=-20V , V
GS
=-4.5V , I
D
=-6A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
V
DD
=-24V , V
GS
=-10V , R
G
=3.3
,
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
10
C
iss
C
oss
C
rss
Input Capacitance
930
148
115
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Conditions
Min.
—
Typ.
—
Max.
–
1
4
Unit
A
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
-24
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
-1.2
V
Note :
1
.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-30A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
3/8
P-Channel Enhancement Mode Mosfet
N+
TM3014NF
N-Channel Typical Characteristics
65
50
I
D
=10A
40
50
35
20
V
GS
=10V
30
20
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
10
0
V
GS
=3V
2
4
6
8
10
0
0.5
1
1.5
2
V
GS
(V)
V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
6
V
DS
=20V
I
D
=10A
7.5
5
4
2
0
T
J
=150
℃
T
J
=25
℃
2.5
0
0
2.5
5
7.5
10
0.00
0.25
0.50
0.75
1.00
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1 . 8
1 . 4
1 . 0
0 . 6
0 . 2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
– 5 0
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, J
u n c t i o n
T e m p
℃
e
)
r
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
4
4/8
P-Channel Enhancement Mode Mosfet
N+
TM3014NF
1000
1 0 0 . 0 0
1 0 . 0 0
1 . 0 0
F=1.0MHz
Ciss
100us
1 m s
100
Coss
Crss
10
m
s
100m
DC
0 . 1 0
Tc = 2
o
5C
Single Pul
10
0 . 0 1
0. 1
1
5
9
13
17
21
25
10
1
100
1000
V
DS
Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
T
ON
T
D = T
ON
/T
0.01
T
Jpeak
= T
C
+P
DM
XR
θJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
2
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
5/8
P-Channel Enhancement Mode Mosfet
N+
TM3014NF
P-Channel Typical Characteristics
50
45
50
I
D
=-12A
40
35
V
40
30
20
GS
=-10V
30
25
20
15
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
10
5
V
GS
=-3V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
2
4
6
8
10
-V
-V
GS
(V)
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
V
DS
=-20V
I
D
=-12A
10
8
8
6
4
2
T
J
=150
℃
6
4
2
0
T
J
=25
℃
0
0
5
10
15
20
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2 . 0
1 . 5
1 . 0
0 . 5
1.5
1
0.5
0
– 5 0
0
50
100
e
)
r
150
-50
0
50
100
150
T
J
,
J u n c t i o n
T e m p
℃
T
J
,Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
6/8
P-Channel Enhancement Mode Mosfet
N+
TM3014NF
10000
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
1000
100
10
10ms
100ms
DC
Coss
Crss
0.10
Tc=25
o
C
Single Pulse
0.01
0.1
1
10
DS
(V)
100
1000
9
13
17
21
25
1
5
-V
-V
DS
Drain to Source Voltage(V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
T
ON
T
D = T
ON
/T
0.01
T
Jpeak
= T
C
+P
DM
XR
θJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
7/8
Package Mechanical Data:DFN5x6-8L
8/8
