Tritech-MOS-TM30N10D
| Part # | Tritech-MOS-TM30N10D |
Download  | Tritech-MOS-TM30N10D |
-Channel
N
TM30N10D
Enhancement Mosfet
General Features
General Description
V
DS
=100V I
D
=30A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
=
32
mΩ(typ.)@V
GS
=10V
R
DS(ON)
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
D
S
G
Marking 30N10
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
100
±
20
30
Units
V
DS
Drain-Source Voltage
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
15
A
80
A
EAS
Single Pulse Avalanche Energy
3
4 0
mJ
A
I
AS
Avalanche Current
30
43.7
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
3
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
50
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
3.0
1/5
-Channel
N
TM30N10D
Enhancement Mosfet
Electrical Characteristics
（
T
J
= 25°C, unless otherwise noted
）
Parameter
Symbol
Test Conditions
Min.
Typ. Max. Unit
Static Characteristics
V
(BR)DSS
l
GSS
Drain-Source Breakdown Voltage
Gate-body Leakage current
V
GS
= 0V, I
D
= 250µA
V
DS
= 0V, V
GS
= ±20V
100
–
–
–
±100
1
V
–
nA
T
J
=25°C
T
J
=100°C
–
–
Zero Gate Voltage Drain
Current
I
DSS
V
GS(th)
R
DS(on)
g
fs
V
DS
=100V, V
GS
= 0V
μA
V
–
–
100
2.5
45
75
–
Gate-Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5A
V
GS
= 4.5V, I
D
= 3A
V
DS
=5V , I
D
=5A
1.2
–
–
–
–
32
38
12
Drain-Source on-Resistance
4
Forward Transconductance
4
mΩ
S
Dynamic Characteristics
5
Input Capacitance
C
iss
C
oss
C
rss
R
g
–
–
–
–
2420
99
–
–
–
–
V
DS
= 15V, V
GS
=0V,
f =1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
84
f =1MHz
1.3
Switching Characteristics
5
Total Gate Charge
Q
g
Q
gs
Q
gd
–
–
–
40.6
8
–
–
–
V
GS
= 10V, V
DS
= 50V,
I
D
=5A
Gate-Source Charge
Gate-Drain Charge
nC
ns
6.7
t
d(on)
Turn-On Delay Time
–
8.7
–
t
r
t
d(off)
t
f
Rise Time
–
–
–
41
40
32
–
–
–
V
GS
=10V, V
DD
=50V,
R
G
= 3Ω, I
D
= 5A
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Diode Forward Voltage
4
V
SD
I
S
I
S
= 1A, V
GS
= 0V
–
–
–
–
–
1.2
30
V
A
Continuous Source Current
T
C
=25°C
Notes:
1. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
2.The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=8A
4.The power dissipation is limited by 150°C junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/5
-Channel
N
TM30N10D
Enhancement Mosfet
Typical Characteristics
20
20
V
GS
= 10V
V
DS
= 5V
V
GS
= 4.5V
GS
= 3.5V
V
15
10
5
15
10
5
V
GS
= 3V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
10
300
250
200
150
100
50
I
D
= 5A
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0
3
6
9
12
15
Gate−source voltage V
GS
(V)
Source−drain voltage V
SD
(V)
Figure 3. Forward Characteristics of Reverse
Figure 4. R
DS(ON)
vs. V
GS
150
120
90
60
30
0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= 4.5V
V
GS
= 10V
0
2
4
6
8
-50
-25
0
25
50
75
100
125
150
Drain current I
D
(A)
Temperature T
j
(
°
C
)
Figure 5. R
DS(ON)
vs. I
D
Figure 6. Normalized R
DS(on)
vs. Temperature
3/5
-Channel
N
TM30N10D
Enhancement Mosfet
10
8
10000
1000
100
V
DS
= 50V
= 5A
I
D
Ciss
6
Coss
Crss
4
10
2
F=1.0MHz
1
0
0
20
40
60
80
100
0
5
10
15
20
25
Drain-source voltage V
DS
（
V
）
Q
g
−Toal Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
50
40
100
10
10μs
30
20
10
100μs
1ms
DC
1
0.1
10ms
Limited by R
DS(on)
Single Pulse
T
C
=25
T
J
=150
℃
℃
0
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
Case Temperature T
C
(
°
C)
Drain−source voltage V
DS
(V)
Figure 9. Power Dissipation
Figure10. Safe Operating Area
10
1
Duty = 1.0
Duty = 0.5
Duty = 0.2
Duty = 0.1
Duty = 0.05
0.1
Duty = 0.02
Duty = 0.01
0.01
e P
ulse
S
ngl
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, Pulse Width(S)
Figure 11. Normalized Maximum Transient Thermal Impedance
4/5
Package Mechanical Data:
TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.200
0.000
0.660
0.460
6.500
5.100
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
5/5
