Tritech-MOS-TM4017NF
| Part # | Tritech-MOS-TM4017NF |
Download  | Tritech-MOS-TM4017NF |
P-Channel Enhancement Mode Mosfet
N+
TM4017NF
General Description
General Features
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
N Channel
V
DS
=
40
V, I
D
=20A
R
DS(ON)
=17m
Ω
@ V
GS
=10V
Applications
P Channel
V
DS
= -40V,I
D
= –
20A
• Load switch
• PWM
R
DS(ON)
=33m
Ω
@ V
GS
=-10V
100% UIS Tested
100% R
g
Tested
NF:DFN5x6-8L
Pin 1
Pin 1
Marking: 20G04 OR 4020
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max. N-Channel
Max. P-Channel
Units
V
DSS
V
GSS
40
±20
20
-40
±20
-20
-10
-64
27.5
22
V
V
Gate-Source Voltage
T
C
= 25
℃
A
I
D
Continuous Drain Current
T
C
= 100
℃
10
A
I
DM
E
AS
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Power Dissipation
64
A
19
mJ
W
P
D
T
C
= 25
℃
9.6
13
R
θJA
Thermal Resistance, Junction to Case
5.7
℃
/W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +150
1/8
P-Channel Enhancement Mode Mosfet
N+
TM4017NF
N-Channel Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
=250μA
V
DS
=40V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
40
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=5A
1.0
1.5
17
25
2.5
24
35
V
–
–
mΩ
mΩ
Static Drain-Source on-Resistance
R
DS(on)
note3
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
633
67
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=20V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
58
12
V
DS
=20V, I
D
=8A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
3.2
3.1
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
4
3
–
–
–
–
ns
ns
ns
ns
V
DD
= 20V, R
L
=2.5Ω
V
GS
=10V,R
REN
=3Ω
15
2
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
20
32
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
= 8A
V
SD
1.2
Voltage
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. EAS condition : T
J
=25
℃
,V
DD
=20V,V
G
=10V,L=0.5mH,Rg=25Ω,I
AS
=7.2A
T
J
=25
℃
,V
DD
=-20V,V
G
= -10V,L=0.5mH,Rg=25Ω,I
AS
=-8.4A
3. Pulse
T
est: Pulse Width≤300μs, Duty Cycle≤2%
2/8
P-Channel Enhancement Mode Mosfet
N+
TM4017NF
P-Channel Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
= -250μA
V
DS
= -40V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
-40
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -8A
V
GS
= -4.5V, I
D
= -5A
-1.0
-1.5
33
-2.5
52
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
45
70
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1034
107
79.5
20
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -20V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
= -20V, I
D
= -8A,
V
GS
= -10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
3.5
4.2
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
8
15
23
9
–
–
–
–
ns
ns
ns
ns
V
DD
= -20V, I
D
= -16A,
V
GS
= -10V, R
GEN
=2.5Ω
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
-20
-64
-1.2
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
= -16A
Voltage
V
SD
-0.8
trr
Reverse Recovery Time
–
–
29
20
–
–
ns
V
GS
=0V, I
S
=-16A,
di/dt=100A/μs
Qrr
Reverse Recovery Charge
nC
3/8
P-Channel Enhancement Mode Mosfet
N+
TM4017NF
Typical Performance Characteristics-N
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
40
I
D
(A)
30
10V
4.5V
25
20
15
10
5
4V
30
T
J
=125
℃
20
25
℃
V
GS
=2V
10
V
GS
(V)
2.4
V
DS
(V)
0
0
0
1
2
3
4
5
0
0.8
1.6
3.2
4.0
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
I
S
(A)
R
DS(ON)
(mΩ)
35
30
1.0E+01
1.0E+00
1.0E-01
1.0E-02
25
20
V
GS
=4.5V
V
GS
=10V
125
℃
T
J
=25
℃
15
10
1.0E-03
1.0E-04
1.0E-05
I
D
(A)
V
SD
(V)
5
0.0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
4
10
3
10
2
10
1
10
8
V
DS
=20V
I
D
=8A
C
iss
6
4
C
oss
C
rss
2
0
V
DS
(V)
Q
g
(nC)
0
2
4
6
8
10
12
0
5
10
15
20
25
4/8
P-Channel Enhancement Mode Mosfet
N+
TM4017NF
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8:
Normalized on Resistance vs.
Junction Temperature
V
BR(DSS)
1.3
R
DS
(on)
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
I
D
(A
)
I
D
(A
)
18
10
3
Limited by R
DS(on)
15
12
9
10
2
10μs
100μs
10
1
10
0
10
-1
1ms
10ms
100ms
6
T
C
=25
℃
Single pulse
DC
3
0
Tc (
℃
)
75 100
V
DS
(V)
10
0.1
1
100
0
25
50
125
150
175
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
2
10
1
10
0
10
-1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t1
t2
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
10
-2
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
5/8
P-Channel Enhancement Mode Mosfet
N+
TM4017NF
Typical Performance Characteristics-P
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
-I
D
(A)
25
-I
D
(A)
25
10V
T
C
=-55
℃
20
20
4.5V
3V
25
℃
15
15
125
℃
2V
10
5
10
5
V
GS
=1V
-V
GS
(V)
1.5 2.0 2.5 3.0 3.5 4.0
-V
DS
(V)
0
0
0
2
4
6
8
10
0
0.5 1.0
4.5
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
-I
S
(A)
R
DS(ON)
(mΩ)
60
55
50
10
T
J
=150
℃
T
J
=-25
℃
V
GS
=-4.5V
45
40
35
30
25
T
J
=-50
℃
1
V
GS
=-10V
-I
D
(A)
V
SD
(V)
0.6 0.8
0.1
0.0
0.2
0.4
1.0
1.2
1.4
0
2
4
6
8
10
12
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
10
8
10
5
V
DS
=-20V
I
D
=-8A
10
4
10
3
6
C
iss
4
2
0
C
oss
C
rss
10
2
10
1
-V
DS
(V)
15
Q
g
(nC)
0
4
8
12
16
20
0
5
10
20
25
30
6/8
P-Channel Enhancement Mode Mosfet
N+
TM4017NF
Figure 8:
Normalized on Resistance vs.
Junction Temperature
R
DS
(on)
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
V
BR(DSS)
2.5
1.3
1.2
2.0
1.5
1.1
1.0
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
50
-100
-50
0
100
150
200
-100
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
Figure 9:
Maximum Safe Operating Area
-I
D
(A
)
-I
D
(A
)
18
10
2
10
1
10
0
15
12
9
10μs
100μs
1ms
DC
6
Limited by R
DS(on)
10
-1
10
-2
Tc=25
℃
Single pulse
-V
DS
(V)
3
0
Tc (
℃
)
75 100
0.01
0.1
1
10
100
0
25
50
125
150
175
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Case
Zth
J-
c(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
10
-1
D=0.05
D=0.02
D=0.01
Single pulse
Notes:
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJ
c+T
C
T
P
(s)
10
-1
10
-2
10
-4
10
-3
10
-2
10
0
10
1
10
2
7/8
Package Mechanical Data:DFN5x6-8L
8/8
