Tritech-MOS-TM50G03NF
| Part # | Tritech-MOS-TM50G03NF |
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P-Channel Enhancement Mode Mosfet
N+
TM50G03NF
General Description
General Features
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
N Channel
V
DS
=
30
V, I
D
=50A
@ V
GS
=10V
R
DS(ON)
=7m
(
typ
.)
Ω
Applications
P Channel
V
DS
= -30V,I
D
= –
50A
• Load switch
• PWM
R
DS(ON)
=10m
Ω
@ V
GS
=-10V
(
typ
.)
100% UIS Tested
100% R
g
Tested
NF:DFN5x6-8L
Pin 1
Pin 1
Marking: 50G03 OR 3050
(T =25°C Unless Otherwise Noted)
A
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
N-Ch
30
P-Ch
-30
V
DS
V
GS
Drain-Source Voltage
V
V
±
20
50
±
20
Gate-Sou
r
ce Voltage
I
D
@Ta=25
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
–
5
0
A
I
D
@Ta=100
℃
25
-26
A
I
DM
EAS
96
-100
A
Single Pulse Avalanche Energy
3
Total Power Dissipation
4
38
76
mJ
W
℃
℃
15
21.3
P
D
@T
C
=25
℃
T
STG
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
48
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
5
1/10
P-Channel Enhancement Mode Mosfet
N+
TM50G03NF
N-Channel Electrical Characteristics
T =25
℃
unless otherwise s ecified
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
0.027
7.0
—
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=12A
V/
℃
1
2
.
14
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=10A
12
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-5.8
—
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
R
g
Gate-Source Leakage Current
Gate Resistance
—
nA
±
100
—
V
DS
=0V , V
GS
=0V , f=1MHz
1.7
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
12.8
3.3
—
V
DS
=20V , V
GS
=4.5V , I
D
=12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
6.5
—
4.5
—
V
DD
=12V , V
GS
=10V , R
G
=3.3
10.8
25.5
9.6
—
I
D
=5A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
1200
163
131
—
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
—
pF
—
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
Min.
—
Typ.
—
Max.
50
Unit
A
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
9 6
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=34A
4.
The power dissipation is limited by 150
℃
junction temperature
5.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
P-Channel Enhancement Mode Mosfet
N+
TM50G03NF
P-Channel Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
GS
=0V, I
D
= -250μA
V
DS
= -30V, V
GS
=0V,
V
DS
=0V, V
GS
= ±20V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
-30
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
DS
=V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -5A
V
GS(th)
R
DS(on)
Gate Threshold Voltage
-1.0
—
-2.5
16
V
–
–
Static Drain-Source on-Resistance
Note3
10
15
mΩ
24
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
1770
233
206
22
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -15V, V
GS
=0V,
f=1.0MHz
C
oss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
g
V
DS
= -15V, I
D
= -5A,
V
GS
= -10V
1.0
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
1.8
Switching Characteristics
Turn-on Delay Time
–
–
–
–
9
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
= -15V, I
D
= -10A,
V
GS
=-10V, R
GEN
=2.5Ω
13
48
20
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
-50
– 100
-1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
= -15A
Voltage
-0.8
64
25
V
Reverse Recovery Time
Reverse Recovery Charge
T
J
=25
℃
,
ns
nC
V
DD
= -24V,I
F
=-2.8A,
dI/dt=-100A/μs
Qrr
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.
EAS condition: T
J
=25
℃
, V
GS
=10V, R
G
=25Ω, L=0.5mH, I
AS
=-12.7A
3.
Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
P-Channel Enhancement Mode Mosfet
N+
TM50G03NF
Typical Performance Characteristics-N
12
12
V
GS
=10V
I
D
=12A
V
GS
=7V
10
V
GS
=5V
11
8
6
4
2
0
V
GS
=4.5V
V
GS
=3V
9
8
6
2
4
6
8
10
0
0.25
0.5
0.75
V
GS
(V)
V
DS
Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
8
12
V
DS
=20V
I
D
=12A
10
8
6
4
2
0
6
℃
T
J
=150
℃
T
J
=25
4
2
0
0
6
12
18
24
30
0
0.3
0.6
0.9
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (
℃
)
T
J
,Junction Temperature (
℃
)
Fig.6 Normalized R
DSON
vs
.
T
J
Fig.5 Normalized V
GS(th)
vs. T
J
P-Channel Enhancement Mode Mosfet
N+
TM50G03NF
10000
100.00
10us
100us
F=1.0MHz
Ciss
10.00
1ms
1000
100
10
10ms
100ms
1.00
DC
Coss
Crss
0.10
T
C
=25
℃
Single Pulse
0.01
1
5
9
13
17
21
25
1
10
0.1
100
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
SINGLE PULSE
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
0.001
0.1
1
10
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
2
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
P-Channel Enhancement Mode Mosfet
N+
TM50G03NF
Test Circuit-N
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Wavefor
P-Channel Enhancement Mode Mosfet
N+
TM50G03NF
Typical Performance Characteristics-P
Figure1:
Output Characteristics
Figure 2:
Typical Transfer Characteristics
-I
D
(A)
50
-I
D
(A)
50
-4.5V
-4V
-10V
T
J
=-55
℃
40
40
30
20
25
℃
-3V
-2V
30
125
℃
20
10
10
0
V
GS
=-1V
-V
DS
(V)
-V
GS
(V)
1.5 2.0 2.5 3.0 3.5 4.0
0
0
0.5
1.0
1.5
2.0
2.5
18
25
0
0.5 1.0
4.5
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
-I
S
(A)
10
R
DS(ON)
(mΩ)
24
20
16
12
V
GS
=-4.5V
T
J
=150
℃
T
J
=-25
℃
T
J
=-50
℃
1
V
GS
=-10V
8
4
0
-I
D
(A)
-V
SD
(V)
0.6 0.8
0.1
0.0
0
3
6
9
12
15
0.2
0.4
1.0
1.2
1.4
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
10
4
10
8
V
DS
=-15V
I
D
=-5A
C
iss
6
10
3
4
C
oss
C
rss
2
0
-V
DS
(V)
15
Q
g
(nC)
10
2
0
5
10
15
20
20
25
30
0
5
10
P-Channel Enhancement Mode Mosfet
N+
TM50G03NF
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
R
DS
(on)
2.5
V
BR(DSS)
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.9
Tj (
℃
)
Tj (
℃
)
0.5
-100
0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
-I
D
(A
)
-I
D
(A
)
18
10
3
10
2
10
1
Limited byR
DS(on)
15
12
9
10μs
100μs
6
10
0
1m
s
T
C
=25
℃
3
0
Single pulse
DC
10
-1
-V
DS
(V)
1
T
A
(
℃
)
0.01
0.1
10
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-1
10
-2
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-1
10
-4
10
-3
10
-2
10
0
10
1
10
2
Package Mechanical Data:DFN5x6-8L
10/10
