Tritech-MOS-TM50N03D
| Part # | Tritech-MOS-TM50N03D |
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TM50N03D
-Channel
N
Enhancement Mosfet
General Description
General Features
V
DS
= 30V
I
D
=50A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
=7.6 m
Ω
(
typ
.) @ V
GS
=10V
R
DS(ON)
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3 L
D
D
S
G
Marking: 50N03
Absolute Maximum Ratings
Rating
Steady State
30
Parameter
Units
Symbol
10s
V
DS
Drain-Source Voltage
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Gate-Sou
r
ce Voltage
±
20
50
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
26
A
168
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
33
mJ
A
I
AS
23.8
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
30.5
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
T
J
hermal Data
Symbol
Parameter
Typ.
Max.
Unit
R
θJC
Thermal Resistance Junction-Case
1
—
5.26
℃
/W
1/6
TM50N03D
-Channel
N
Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
=250μA
V
DS
=30V, V
GS
=0V,
V
DS
=0V, V
GS
=±20V
30
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=10A
1.0
1.5
7.6
2.5
10
17
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
10.2
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1011
142
119
19
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=15V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
=15V, I
D
=20A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
6.3
4.5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
6
5
–
–
–
–
ns
ns
ns
ns
V
DS
=30V,
I
D
=2A, R
GEN
=3Ω,
V
GS
=10V
25
7
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
50
160
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=30A
–
V
Voltage
Body Diode Reverse Recovery Time
7
ns
nC
I
F
=30A,dI/dt=100A/μs
Body Diode Reverse Recovery
Charge
Qrr
6.3
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. EAS condition: T
J
=25
℃
, V
DD
=15
V
,
V
G
=10
V
, R
G
=25Ω, L=0.5mH, I
AS
=11.5A
3. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤0.5%
2/6
TM50N03D
-Channel
N
Enhancement Mosfet
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
100
10V
8V
80
I
D
(A)
100
80
3.5V
5V
60
60
40
20
0
40
20
0
3V
125
℃
25
℃
V
GS
=2.5V
V
GS
(V)
V
DS
(V)
0
2.0
4.0
6.0
8.0
10.0
0
1
2
3
4
5
6
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
I
S
(A)
R
DS(ON)
(mΩ)
14
12
10
8
1000
100
V
GS
=4.5V
150
℃
25
℃
10
1
V
GS
=10V
25
6
4
I
D
(A)
15
V
SD
(V)
1.0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0
5
10
20
30
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
8
V
DS
=15V
I
D
=20A
10000
C
iss
6
1000
100
C
oss
C
rss
4
2
0
V
DS
(V)
Q
g
(nC)
10
0
0
4
8
10
15
20
5
10
15
20
25
30
3/6
TM50N03D
-Channel
N
Enhancement Mosfet
Figure 7:
Normalized Breakdown Voltage vs.
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
Figure 9:
Maximum Safe Operating Area
vs. Case Temperature
I
D
(A
)
I
D
(A
)
10
3
48
40
32
24
16
10μs
100μs
1ms
10
2
10
1
10
0
10ms
100ms
DC
Limited by R
DS(on)
T
C
=25
℃
Single pulse
8
0
10
-1
0.1
Tc (
℃
)
75 100
V
DS
(V)
1
10
100
0
25
50
125
150
175
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-2
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
4/6
TM50N03D
-Channel
N
Enhancement Mosfet
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
5/6
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
6/6
