Tritech-MOS-TM50N06AD
| Part # | Tritech-MOS-TM50N06AD |
Download  | Tritech-MOS-TM50N06AD |
-Channel
N
TM50N06AD
Enhancement Mosfet
General Description
General Features
V
DS
= 60V
I
D
=48A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
DS(ON)
R
=13 m
Ω
(
typ.
@ V
=10V
)
GS
Applications
100% UIS Tested
100% R
g
Tested
• Load switch
• PWM
D:TO-252-3L
D
D
S
G
Marking: 50N06A
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
60
±20
48
V
V
Gate-Source Voltage
T
C
= 25
℃
A
I
D
Continuous Drain Current
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
T
C
= 100
℃
23
A
I
DM
EAS
P
D
180
280
87.7
1.6
A
mJ
W
Power Dissipation
T
C
= 25
℃
Thermal Resistance, Junction to Case
R
θJC
℃
/W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +175
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θ
JC
1.76
℃
/W
1/5
-Channel
N
TM50N06AD
Enhancement Mosfet
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
BV
DSS
I
DSS
V
GS
=0V I
D
=250
μ
A
V
DS
=60V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
60
–
–
–
–
–
1
V
μ
A
nA
I
GSS
–
±100
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250
μ
A
V
GS
=10V, I
D
=30A
V
DS
=5V,I
D
=30A
1
–
2
13
–
3
16
–
V
m
Ω
S
30
C
lss
C
oss
C
rss
–
–
–
2498
185
80
–
–
–
PF
PF
PF
V
DS
=25V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
12
5.2
38
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=30V,I
D
=2A,R
L
=1
Ω
GS
=10V,R
GEN
=3
Ω
V
Turn-Off Delay Time
Turn-Off Fall Time
27
Total Gate Charge
Q
g
Q
gs
Q
gd
36
V
DS
=30V,I
D
=30A,
GS
=10V
Gate-Source Charge
9.9
6.6
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
V
SD
I
S
V
GS
=0V,I
S
=30A
–
–
–
–
–
1.2
48
V
A
–
t
rr
TJ = 25°C, IF =30A
di/dt = 100A/
μ
s
(Note3)
35
47
nS
nC
Reverse Recovery Charge
Forward Turn-On Time
Qrr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
E
AS
condition: Tj=25
℃
,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25
Ω
2/5
-Channel
N
TM50N06AD
Enhancement Mosfet
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
40
I
D
(A)
30
10V
4.5V
25
20
15
10
5
4V
30
T
J
=125
℃
20
25
℃
V
GS
=3V
10
V
GS
(V)
2.4
V
DS
(V)
0
0
0
1
2
3
4
5
0
0.8
1.6
3.2
4.0
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
I
S
(A)
R
DS(ON)
(mΩ)
24
20
1.0E+01
1.0E+00
1.0E-01
1.0E-02
VGS=4.5V
VGS=10V
16
12
125
℃
T
J
=25
℃
8
4
1.0E-03
1.0E-04
1.0E-05
I
D
(A)
V
SD
(V)
0
0
0.0
0.2
0.4
0.6
0.8
1.0
10
20
30
40
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
8
VDS=30V
ID=30A
10
4
C
iss
6
10
3
10
2
C
oss
4
2
0
C
rss
V
DS
(V)
Q
g
(nC)
0
10
20
30
40
50
60
0
10
20
30
40
50
3/5
-Channel
N
TM50N06AD
Enhancement Mosfet
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
R
DS
(on)
V
BR(DSS)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
I
D
(A
)
I
D
(A
)
60
1000
Limited by R
DS(on)
50
40
30
10μs
100
10
1
100μs
1ms
10ms
100ms
DC
20
T
C
=25
℃
Single pulse
10
0
Tc (
℃
)
75 100
V
DS
(V)
10
0.1
0.1
1
100
0
25
50
125
150
175
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-2
10
-3
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
4/5
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
5/5
