Tritech-MOS-TM50P04D
| Part # | Tritech-MOS-TM50P04D |
Download  | Tritech-MOS-TM50P04D |
-Channel
TM50P04D
P
Enhancement Mosfet
General Description
General Features
V
DS
=-40V I
=-50
• Low R
DS(ON)
A
D
• RoHS and Halogen-Free Compliant
=-10V
=
10m
W
(
typ
.)@
V
GS
R
DS(ON)
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
D
S
G
Marking: 50P04
Absolute Maximum Ratings (TC=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
-40
Units
V
DS
Drain-Source Voltage
V
V
V
GS
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-50
-32
A
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
EAS
-105
146
A
Single Pulse Avalanche Energy
3
Avalanche Current
mJ
A
I
AS
-54
T
o
tal Power Dissipation
4
52.1
2
W
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
T
o
tal Power Dissipation
4
W
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
-55 to 150
-55 to 150
62
℃
T
J
℃
R
θ
JA
℃
/W
℃
/W
R
θ
JC
2.4
1/5
-Channel
TM50P04D
P
Enhancement Mosfet
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
Min.
-40
—
Typ.
-44
Max. Unit
Drain-Source Breakdown Voltage
BV
DSS
T
e
mperature Coefficient
V
GS
=0V , I
D
=-250uA
—
—
13
V
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
-0.023
10
V/
℃
V
GS
=-10V , I
D
=-30A
V
GS
=-4.5V , I
D
=-20A
—
R
DS(ON)
Static Drain-Source On-Resistance
2
mΩ
—
14.2
20
V
GS(th)
Gate Threshold Voltage
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-1.6
4.74
—
-2.5
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
mV/
℃
V
DS
=-32V , V
GS
=0V , T
J
=25
℃
V
DS
=-32V , V
GS
=0V , T
J
=55
℃
V
GS
=±20V , V
DS
=0V
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
R
g
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±100
—
nA
S
V
DS
=-5V , I
D
=-18A
24
V
DS
=0V , V
GS
=0V , f=1MHz
7
14
—
Ω
Q
g
T
o
tal Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
27.9
7.7
7.5
40
V
DS
=-20V , V
GS
=-4.5V ,
I
D
=-12A
Q
gs
Q
gd
T
d(on)
T
r
—
nC
ns
—
Turn-On Delay Time
Rise Time
—
V
DD
=-15V , V
GS
=-10V ,
R
G
=3.3Ω,
35.2
100
9.6
3500
323
222
—
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
I
D
=-1A
—
C
iss
C
oss
C
rss
I
S
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
—
-52
-105
-1
A
A
V
V
G
=V
D
=0V , Force Current
I
SM
—
V
SD
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
Note :
1
、
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The EAS data shows Max. rating . The test condition is VDD=-25
V
,
VGS=-10
V
,
L=0.1mH,IAS=-54A
4
、
The power dissipation is limited by 150
℃
junction temperature
5
、
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2/5
-Channel
TM50P04D
P
Enhancement Mosfet
Typical Characteristics
18
16
14
12
10
12
10
I
D
=-12A
V
GS
=-10V
8
6
4
2
0
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
2
4
6
8
10
0
0.25
0.5
0.75
1
-V
GS
(V)
-V
DS
Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
V
DS
=-20V
I
D
=-12A
8
6
4
2
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
20
40
60
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (
℃
)
T
J
,Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
3/5
-Channel
TM50P04D
P
Enhancement Mosfet
10000
1000.00
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
1000
100
10
Coss
Crss
10ms
100ms
DC
0.10
Tc=25
o
C
Single Pulse
0.01
0.1
1
10
100
1
5
9
13
17
21
25
-V
DS
(V)
-V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
SINGLE
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4/5
Package Information:TO-252-3L
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.400
0.127
0.860
0.580
6.700
5.460
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
5/5
