Tritech-MOS-TM60N03DF
| Part # | Tritech-MOS-TM60N03DF |
Download  | Tritech-MOS-TM60N03DF |
-Channel
N
Enhancement Mosfet
TM60N03DF
General Description
General Features
• Low R
DS(ON)
V
DS
= 30V
I
D
=60A
• RoHS and Halogen-Free Compliant
(
typ
.
)
R
DS(ON)
= 4.7mΩ
@ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
DF:DFN3x3_8L
Marking: 60N03
(T
A
= 25
°
C Unless Otherwise Noted)
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
30
±
20
60
V
GS
V
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
I
D
@T
C
=100
℃
30
A
I
DM
160
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
58
mJ
A
I
AS
P
D
@T
C
=25
℃
T
STG
60
Total Power Dissipation
4
25
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-Ambient
1
—
62
℃
/W
R
θJA
1/6
-Channel
N
Enhancement Mosfet
TM60N03DF
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=10V , I
D
=20A
4.7
6.5
—
6.0
9
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=4.5V , I
D
=10A
V
GS
=V
DS
, I
D
=250uA
2.5
1
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
V
DS
=5V , I
D
=30A
—
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
43
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.7
34
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=15V , V
GS
=4.5V , I
D
=15A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
6
—
9
—
8.5
103
37.3
105
1600
245
215
—
V
DD
=15V , V
GS
=10V , R
G
=3.3
—
I
D
=15A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
—
pF
—
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
Min.
—
Typ.
—
Max.
60
Unit
A
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
140
1
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=48A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/6
-Channel
N
Enhancement Mosfet
TM60N03DF
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
100
I
D
(A)
100
10V
7V
80
60
80
4.5V
3.5V
60
125
℃
40
20
0
40
3V
25
℃
20
V
GS
=2.5V
V
GS
(V)
3.0
V
DS
(V)
0
0
1
2
3
4
5
0
1.0
2.0
4.0
5.0
6.0
1.8
30
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
I
S
(A)
R
DS(ON)
(mΩ)
10
3
10
2
14.0
12.0
10.0
8.0
T
J
=125
℃
T
J
=25
℃
V
GS
=4.5V
V
GS
=10V
10
1
10
0
6.0
4.0
2.0
V
GS
=0V
1.6
I
D
(A)
20
V
SD
(V)
1.0
0.2
0.4
0.6
0.8
1.2
1.4
0
10
30
40
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
2100
1800
1500
10
8
V
DS
=15V
I
D
=30A
C
iss
6
4
1200
900
C
oss
600
2
0
300
0
C
rss
Q
g
(nC)
V
DS
(V)
0
7
14
21
28
35
0
6
12
18
24
3/6
-Channel
N
Enhancement Mosfet
TM60N03DF
Figure 7:
Normalized Breakdown Voltag
e
v
s.
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
(V)
1.3
R
DS
(on)(mΩ)
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drai
n
C
urrent
vs. Case Temperature
I
D
(A
)
I
D
(A
)
60
1000
100
10
50
40
30
20
10μs
100μs
1ms
Limited by R
DS(on)
10ms
T
C
=25
℃
1
100ms
Single pulse
10
0
DC
Tc (
75
℃
)
V
DS
(V)
0.1
0.1
1
10
100
0
25
50
100
125
150
175
Figure.11
:
Maximu
m
E
ffectiv
e
T
ransient
Thermal Impedance
,
J
unction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-2
10
-3
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
4/6
-Channel
N
Enhancement Mosfet
TM60N03DF
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
5/6
_
Package Mechanical Dat
a
:
DFN3x3
8L
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
6/6
