Tritech-MOS-TM60N04D
| Part # | Tritech-MOS-TM60N04D |
Download  | Tritech-MOS-TM60N04D |
-Channel
N
TM60N04D
Enhancement Mosfet
General Description
General Features
V
DS
=40V I
D
• Low R
DS(ON)
=60
A
• RoHS and Halogen-Free Compliant
R
DS(ON)
=
7.7
m
W
(
Typ
.) @ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3
D
D
D
S
G
Marking: 60N04
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25
°
C Unless Otherwise Noted)
40
45
V
DSS
Drain-Source Voltage
BV
DS(Avalanche)
*
V
Drain-Source Avalanche Voltage (Maximum)
G
a
t
e
–
S
ource Voltage
±
20
175
-55 to 175
60
V
GSS
T
J
°
C
°
C
A
Maximum Junction
T
e
m
perature
Storage
T
e
mperature Range
Diode Continuous Forward Current
T
STG
I
S
T
C
=25
°
C
T
C
=100
°
C
T
C
=25
°
C
T
C
=100
°
C
T
C
=25
°
C
T
C
=100
°
C
160
90
I
DP
300
μ
s Pulse Drain Current Tested
C
o
ntinuous Drain Current
A
A
60
I
D
48
60
P
D
Maximum Power Dissipation
W
30
R
q
JC
R
q
JA
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy
2
.
5
°
C/W
°
C/W
mJ
50
E
A
S
**
L=0.5mH
100
Notes
：
* Avalanche single pulse test and avalanche period time tav
≦
100
μ
s, duty<1% .
** Avalanche test condition: T
J
=25
°
C, L=0.5mH, I
AS
=20A, V
DD
=30V, and V
GS
=10
V
.
*** Current limited by bond wire.
1/7
-Channel
N
TM60N04D
Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
XP4184
Unit
Min. Typ. Max.
Symbol
Parameter
Test Conditions
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
40
–
–
1
V
V
GS
=
0
V, I
D
S
=250
m
A
V
DS
=32V, V
GS
=0V
–
–
I
DSS
Zero Gate Voltage Drain Current
m
A
T
J
=85
°
C
–
1.0
–
–
30
2
V
GS(th)
I
GSS
G
a
te Threshold Voltage
G
a
te Lea
k
a
ge Current
1.5
–
V
V
DS
=V
GS
, I
DS
=250
m
A
V
GS
=
±
20V, V
D
S
=0V
V
GS
=
1
0V, I
DS
=20A
V
GS
=
4
.
5V, I
DS
=10A
±
100
11
18
nA
–
7.8
a
R
D
S
(
ON)
Drain-Source On-state Resistance
m
W
–
10
Diode Characteristics
a
V
SD
t
rr
Diode Forward Voltage
I
SD
=20A, V
GS
=0V
–
–
–
0.8
28
24
1.1
V
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
DS
=40A,
dl
SD
/
d
t
=100A/
m
s
Q
rr
Dynamic Characteristics
b
R
G
C
iss
C
oss
C
rss
t
d
(
ON)
t
r
Gate Resistance
V =0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
1.4
1460
180
146
11
–
W
GS
Input Capacitance
–
V
GS
=0V,
V
DS
=
2
0V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
–
pF
–
21
24
67
21
V
D
D
=20V, R
L
=20
W
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
W
13
ns
t
d(OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
b
37
11
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
31.2
3.8
9
44
–
V
DS
=
2
0V, V
GS
=
1
0V,
I
DS
=40A
nC
–
Note a : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
Note b : Guaranteed by design, not subject to production testing.
2/7
-Channel
N
TM60N04D
Enhancement Mosfet
Typical Performance Characteristics
Power Dissipation
Drain Current
70
70
60
50
40
30
20
10
60
50
40
30
20
10
0
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
0
20 40 60 80
100 120 140 160 180
0
20 40 60 80
100 120 140 160 180 200
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
emperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
500
100
2
1
Duty = 0.5
0.2
300us
1ms
0.1
0.05
0.02
0.1
0.01
1E-3
10ms
10
1
100ms
0.01
1s
DC
Single Pulse
Mounted on 1in
2
pad
T
C
=25
O
C
R
q
JA
:50
o
C/W
0.1
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10
100
V
DS
– Drain – Source Voltage (V)
Square Wave Puls
e
D
uration (sec)
3/7
-Channel
N
TM60N04D
Enhancement Mosfet
Drain-Source On Resistance
Output Characteristics
100
90
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
8
V
GS
=4.5,5,6,7,8,9,10V
V
GS
=4.5V
V
GS
=10V
4V
6
3.5V
3V
4
2
0
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
–
D
rain Current (A)
V
DS
– Drain – Source Voltage (V)
Gate Threshold Voltage
Gate-Source On Resistance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
30
25
20
15
10
5
I
DS
=20A
I
DS
=250
m
A
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
4/7
-Channel
N
TM60N04D
Enhancement Mosfet
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
V
GS
= 10V
I
DS
= 20A
T
j
=150
o
C
10
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 6.2m
W
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
– Source – Drain Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Capacitance
Gate Charge
10
2400
2100
1800
1500
1200
900
Frequency=1MHz
V
DS
= 15V
I
DS
= 40A
9
8
7
6
5
4
3
2
1
0
Ciss
600
300
Coss
Crss
0
0
5
10 15 20 25 30 35 40
0
4
8
12 16 20 24 28 32
Q
G
–
G
ate Charge (nC)
V
DS
– Drain – Source Voltage (V)
5/7
-Channel
N
TM60N04D
Enhancement Mosfet
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
W
t
AV
Switching Time Test Circuit and Waveforms
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
6/7
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
7/7
