Tritech-MOS-TM60P02D

-Channel  

TM60P02D  

P

Enhancement Mosfet  

General Description  

General Features  

V

DS

=-20V I

 

=-60  

• Low R

DS(ON)  

A

D

• RoHS and Halogen-Free Compliant  

R

=

9

m

W

(

typ

.)

@

V

GS  

DS(ON)  

=

-4.5V  

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

D:TO-252-3L  

D

D

D

S

G

Marking: 60P02  

Absolute Maximum Ratings

 

(Tc=25

℃

Unless otherwise noted)  

Symbol  

Parameter  

Rating  

Units  

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

-20  

±

12  

-60  

V

V

I

D

@T

C

=25

℃  

I

D

@T

C

=70

℃  

I

DM  

Continuous Drain Current, V

GS

@ -4.5V

1  

Continuous Drain Current, V

GS

@ -4.5V

1  

Pulsed Drain Current

2  

A

-25  

A

-68  

A

P

D

@T

C

=25

℃  

P

D

@T

C

=70

℃  

T

STG  

Total Power Dissipation

3  

38  

W

W

℃

℃

Total Power Dissipation

3  

18  

Storage Temperature Range  

Operating Junction Temperature Range  

-55 to 150  

-55 to 150  

T

J  

Thermal Data  

Symbol  

R

θJA  

Parameter  

Max.  

75  

Unit  

℃

/W  

℃

/W  

℃

/W  

Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Ambient

1

(t

≤

10s)  

Thermal Resistance Junction-Case

1  

R

θJA  

40  

R

θJC  

4.2  

1/5  

-Channel  

TM60P02D  

P

Enhancement Mosfet  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=-250uA  

Min.  

-20  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

BV

DS

△

T

J  

S

/  

BV

DSS

Temperature Coefficient  

△

Reference to 25

℃

, I

D

=-1mA  

V

GS

=-4.5V , I

D

=-10A  

-0.012  

9

—  

V/

℃  

—  

13  

R

DS(ON)  

Static Drain-Source On-Resistance

2  

12  

m



 

V

GS

=-2.5V , I

D

=-8A  

—  

18  

V

GS(th)  

Gate Threshold Voltage  

V

GS(th)

Temperature Coefficient  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

Forward Transconductance  

Total Gate Charge (-4.5V)  

Gate-Source Charge  

-0.5  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

-0.7  

2.94  

—  

-1.0  

—  

1

V

mV/

℃  

uA  

V

GS

=V

DS

, I

D

=-250uA  

△

V

GS(th)  

I

DSS  

I

GSS  

gfs  

V

DS

=-15V , V

GS

=0V , T

J

=25

℃  

V

GS

=

±

12 V , V

DS

=0V  

V

DS

=-5V , I

D

=-10A  

—  

±

100  

nA  

43  

—  

S

Q

g  

35  

—  

—  

V

DS

=-10V , V

GS

=-4.5V , I

D

=-10A  

nC  

ns  

Q

gs  

5.0  

10  

Q

gd  

Gate-Drain Charge  

—  

T

d(on)  

T

r  

Turn-On Delay Time  

12.0  

40.0  

30  

—  

V

DD

=-10V , V

GS

=-4.5V ,  

Rise Time  

—  

T

d(off)  

T

f  

Turn-Off Delay Time  

R

G

=3.3



, I

D

=-10A  

—  

Fall Time  

—  

10  

2800  

690  

590  

—  

C

iss  

C

oss  

C

rss  

I

S  

Input Capacitance  

—  

Output Capacitance  

V

DS

=-15V , V

GS

=0V , f=1MHz  

V

G

=V

D

=0V , Force Current  

—  

pF  

Reverse Transfer Capacitance  

Continuous Source Current

1,4  

Pulsed Source Current

2,4  

Diode Forward Voltage

2  

Reverse Recovery Time  

Reverse Recovery Charge  

—  

-60.0  

—-  

-1.2  

—  

A

A

I

SM  

V

SD  

t

rr  

—  

V

GS

=0V , I

S

=-1A , T

J

=25

℃  

I

F=-10A , dI/dt=100A/µs ,  

T

J

=25

℃

 

—  

V

27  

nS  

nC  

Q

rr  

17.8  

—  

Note :  

1

.

The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3

.

The power dissipation is limited by 150

℃

junction temperature  

The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total powe

r

d

issipation.  

4.  

2/5  

-Channel  

TM60P02D  

P

Enhancement Mosfet  

Typical Characteristics  

20  

16  

12  

8

I

D

=-14A  

4

0

1

3

4

5

-V

GS

(V)  

Fig.1 Typical Output Characteristics  

Fig.2 On-Resistance vs. G-S Voltage  

12  

9

T

J

=150

℃

T

J

=25

℃  

6

3

0

0

0.3  

0.6  

0.9  

1.2  

-V

SD

, Source-to-Drain Voltage (V)  

Fig.3 Forward Characteristics of Reverse  

Fig.4 Gate-charge Characteristics  

1.8  

1 . 8  

1 . 4  

1 . 0  

0 . 6  

0 . 2  

1.4  

1

0.6  

0.2  

– 5 0  

0

50  

100  

150  

-50  

0

50  

100  

150  

T

J  

, J

 

u n c t i o n

 

T e m

p

℃

e

)

r  

Tj ,Junction Temperature (

℃

)  

Fig.5 Normalized V

GS(th)

vs. T

J  

Fig.6 Normalized R

DSON

vs. T

J  

3/5  

-Channel  

TM60P02D  

P

Enhancement Mosfet  

10000  

Ciss  

1000  

100  

Coss  

Crss  

F=1.0MHz  

10  

1

5

9

13  

17  

21  

V

DS

Drain to Source Voltage(V)  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

1

0.1  

DUTY=0.5  

0.2  

0.1  

0.05  

0.02  

0.01  

0.01  

0.001  

SINGLE PULSE  

P

DM  

T

ON  

T

D = T

ON

/T  

T

J

peak = T

A

+ P

DM

x R

θJA  

0.0001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

Fig.10 Switching Time Waveform  

Fig.11 Gate Charge Waveform  

4/5  

Package Mechanical Data:  

TO-252-3L  

Dimensions In Millimeters  

Dimensions In Inches  

Min.  

Symbol  

Min.  

Max.  

2.400  

0.127  

0.860  

0.580  

6.700  

5.460  

Max.  

0.094  

0.005  

0.034  

0.023  

0.264  

0.215  

A

A1  

b

2.200  

0.000  

0.660  

0.460  

6.500  

5.100  

0.087  

0.000  

0.026  

0.018  

0.256  

0.201  

c

D

D1  

D2  

E

4.830 TYP.  

0.190 TYP.  

6.000  

2.186  

9.800  

6.200  

2.386  

0.236  

0.086  

0.386  

0.244  

0.094  

0.409  

e

L

10.400  

L1  

L2  

L3  

L4  

Φ

θ

2.900 TYP.  

1.600 TYP.  

0.114 TYP.  

0.063 TYP.  

1.400  

1.700  

0.055  

0.067  

0.600  

1.100  

0°  

1.000  

1.300  

8°  

0.024  

0.043  

0°  

0.039  

0.051  

8°  

h

0.000  

0.300  

0.000  

0.012  

V

5.350 TYP.  

0.211 TYP.  

5/5