Tritech-MOS-TM60P03NF
| Part # | Tritech-MOS-TM60P03NF |
Download  | Tritech-MOS-TM60P03NF |
-Channel
TM60P03NF
P
Enhancement Mosfet
General Description
General Features
=
D
• Low R
DS(ON)
V
DS
= -30V
I -60
A
• RoHS and Halogen-Free Compliant
DS(ON)
R
= 7.2m
Ω
(typ.) @ V
GS
=-10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
NF:DFN5x6-8L
Marking: 60P03
Absolute Maximum Ratings
(T
A
= 25
°
C Unless Otherwise Noted)
Parameter
Symbol
V
DS
Value
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
GS
±20
V
T
C
=25°C
-60
I
D
Continuous Drain Current
Pulsed Drain Current
1
A
T
C
=100°C
-35
-168
I
DM
EAS
A
Single Pulse Avalanche Energy
2
45
mJ
W
P
D
Total Power Dissipation
T
C
=25°C
45
Operating Junction and Storage Temperature Range
-55 to 150
°C
T
J
,
T
STG
Thermal Characteristics
Parameter
Thermal Resistance from Junction-to-Ambient
3
Thermal Resistance from Junction-to-Case
Symbol
R
θJA
Value
65
Unit
°C/W
°C/W
R
θJC
3.36
1/6
-Channel
TM60P03NF
P
Enhancement Mosfet
Electrical Characteristics (
T
J
= 25°C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
V
(BR)DSS
l
GSS
Drain-Source Breakdown Voltage
Gate-body Leakage current
V
GS
= 0V, I
D
= -250µA
V
DS
= 0V, V
GS
= ±20V
-30
–
–
–
±100
-1
V
–
nA
–
–
T
J
=25
℃
T
J
=100
℃
Zero Gate Voltage Drain
Current
I
DSS
V
GS(th)
R
DS(on)
g
fs
V
DS
= -30V, V
GS
= 0V
μA
V
–
–
-100
-2.5
9.0
18
Gate-Threshold Voltage
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -30A
V
GS
= -4.5V, I
D
= -15A
V
DS
= -5V, I
D
= -30A
-1.0
–
–
–
–
7.2
10
57
Drain-Source On-Resistance
4
mΩ
S
Forward Transconductance
4
Dynamic Characteristics
5
Input Capacitance
–
C
iss
C
oss
C
rss
R
g
–
–
–
–
2396
325
–
–
–
–
V
DS
= -15V, V
GS
=0V,
f =1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
283
f =1MHz
10.5
Ω
Switching Characteristics
5
Total Gate Charge
Q
g
Q
gs
Q
gd
–
–
–
30
5
–
–
–
V
GS
= -10V,V
DS
= -15V,
Gate-Source Charge
nC
ns
I
D
= -30A
Gate-Drain Charge
7.5
t
d(on)
Turn-On Delay Time
–
14.1
–
t
r
t
d(off)
t
f
Rise Time
–
–
–
–
–
20
94
65
19
9
–
–
–
–
–
V
GS
= -10V, V
DD
= -15V,
R
G
= 3
Ω
, I
D
= -30A
Turn-Off Delay Time
Fall Time
t
rr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
I
F
= -30A, dI/dt = 100A/µs
Q
rr
nC
Drain-Source Body Diode Characteristics
Diode Forward Voltage
4
I
S
= -1A, V
GS
= 0V
–
–
–
–
–
-1.2
-60
V
A
V
SD
I
S
Continuous Source Current
T
C
=25°C
Note :
1. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
2. The EAS data shows Max. rating . The test condition is V
DD
= -25V, V
GS
= -10V, L= 0.1mH, I
AS
= -30A.
3. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the
user’s specific board design.
4. The data tested by pulsed , pulse width
≤
300us , duty cycle
≤
2%.
5. This value is guaranteed by design hence it is not included in the production test.
2
2/6
-Channel
TM60P03NF
P
Enhancement Mosfet
Typical Characteristics
80
80
V
GS
= -10V
V
GS
= -7V
V
GS
= -5V
V
GS
= -4.5V
V
DS
= -5V
60
40
20
0
60
40
20
0
V
GS
= -3V
0
2
3
4
5
1
Drain−source voltage
-V
DS
(V)
0
1
2
3
4
5
Gate−source voltage
-V
GS
(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
100
80
60
40
20
0
I
D
= -30A
10
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
3
6
9
12
15
Gate−source voltage
-V
GS
(V)
Source−drain voltage
-V
SD
(V)
Figure 3. Forward Characteristics of Reverse
Figure 4. R
DS(ON)
vs. V
GS
30
25
20
15
10
5
2.0
1.5
1.0
0.5
0.0
V
GS
= -4.5V
V
GS
= -10V
0
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
Drain current -I
D
(A)
Temperature T
j
(
°
C
)
Figure 5. R
DS(ON)
vs. I
D
Figure 6. Normalized R
DS(on)
vs. Temperature
3/6
-Channel
TM60P03NF
P
Enhancement Mosfet
100000
10000
1000
Ciss
Coss
Crss
100
10
F=1.0MHz
1
0
5
10
15
20
25
30
Drain-
source voltage
-V
DS
（
V
）
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
100
10
40
30
20
10
0
10μ
s
100μ
s
1ms
DC
Limited by R
DS(on)
10ms
1
Single Pulse
0.1
0.01
T
C
=25
℃
T
J
=150
℃
0
25
50
75
100
125
150
0.1
1
10
100
Case Temperature T
C
(
°
C)
Drain−source voltage
-V
DS
(V)
Figure 9. Power Dissipation
Figure10. Safe Operating Area
10
1
Duty = 1.0
Duty = 0.5
Duty = 0.2
Duty = 0.1
Duty = 0.05
0.1
0.01
Duty = 0.02
Duty = 0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, Pulse
Width(S)
Figure 11. Normalized Maximum Transient Thermal Impedance
4/6
-Channel
TM60P03NF
P
Enhancement Mosfet
Test Circuit
5/6
Package Mechanical Data DFN5x6-8L
:
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