Tritech-MOS-TM70P02D
| Part # | Tritech-MOS-TM70P02D |
Download  | Tritech-MOS-TM70P02D |
-Channel
P
Enhancement Mosfet
TM70P02D
General Features
General Description
V
DS
=-20V I
=-70
A
D
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
R
DS(ON)
=6.5mΩ(typ.)@
V
GS
=-4.5V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
S
G
Marking:70P02
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
-20
±12
V
V
Gate-Source Voltage
T
C
= 25
℃
-70
I
D
Continuous Drain Current
A
T
C
= 100
℃
-39
I
DM
P
D
Pulsed Drain Current
note1
Power Dissipation
-240
70
A
W
T
C
= 25
℃
R
θJC
Thermal Resistance, Junction to Ambient
2.1
℃
/ W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +175
1/6
-Channel
P
Enhancement Mosfet
TM70P02D
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V,I
D
= -250μA
V
DS
= -20V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±12V
-20
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250μA
V
GS
=-4.5V, I
D
=-15A
V
GS
=-2.5V, I
D
=-12A
-0.5
-0.7
6.5
8
-1.0
8.5
12
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
4590
505
440
46
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=-10V, V
GS
=0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
=-10V, I
D
=-15A,
V
GS
=-4.5V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
7.3
10
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
8
–
–
–
–
ns
ns
ns
ns
V
DD
=-10V, I
D
=-14A,
R
GEN
=2.7Ω,
59
111
43
V
GS
=-10V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
-70
-240
-1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
= 0V, I
S
=-20A
Voltage
–
V
Reverse Recovery Time
T
J
=25
℃
,I
SD
=-15A,
V
GS
=0V
18
7.7
ns
nC
Qrr
Reverse Recovery Charge
–
di/dt=-100A/μs
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. EAS condition: T
J
=25
℃
,V
DD
=-10
V
,
V
G
=-10
V
,
R
G
=5.9
Ω
, L=0.5mh,I
AS
=-13.2A
3. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤0.5%
2/6
-Channel
P
Enhancement Mosfet
TM70P02D
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
-I
D
(A)
-I
D
(A)
-5.5V
-5.0V
T
J
=25
℃
10
2
-4.5V
10
2
-4.0V
T
J
=150
℃
-3.5V
-3.0V
-2.5V
10
1
10
0
10
1
-V
GS
(V)
-V
DS
(V)
10
0
10
-1
10
0
0
1
2
3
4
5
6
7
8
9
10
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
-I
S
(A)
10
3
12
10
T
J
=150
℃
T
J
=25
℃
10
2
8
6
V
GS
=-2.5V
V
GS
=-4.5V
10
1
10
0
4
2
-I
D
(A)
-V
SD
(V)
0.8
0
0.2
0.4
0.6
1
1.2
1.4
0
5
10
15
20
25
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
10
4
5
4
3
2
V
DS
=-10V
I
D
=-15A
C
iss
10
3
C
oss
C
rss
10
2
10
1
1
0
-V
DS
(V)
30
Q
g
(nC)
0
10
20
30
40
50
60
0
10
20
40
50
60
3/6
-Channel
P
Enhancement Mosfet
TM70P02D
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8:
Normalized on Resistance vs.
Junction Temperature
V
BR(DSS)
(V)
R
DS
(on)(mΩ)
1.3
2.5
1.2
1.1
1.0
1.5
1.0
0
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
-I
D
(A
)
-I
D
(A
)
70
1000
100
60
10μs
50
40
100μs
1ms
Limited by
R
DS(on)
10
30
20
10ms
DC
T
C
=25
℃
Single pulse
1
10
0
Tc (
℃
)
75 100
-V
DS
(V)
0.1
0.1
1
10
0
25
50
125
150
175
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
t1
D=0.2
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-2
10
-3
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-2
10
-6
10
-5
10
-4
10
-3
10
-1
10
0
10
1
4/6
-Channel
P
Enhancement Mosfet
TM70P02D
–
Test Circuit
5/6
Package Mechanical Data:
TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.200
0.000
0.660
0.460
6.500
5.100
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
6/6
