Tritech-MOS-TM80N03NF
| Part # | Tritech-MOS-TM80N03NF |
Download  | Tritech-MOS-TM80N03NF |
-Channel
N
TM80N03NF
Enhancement Mosfet
General Features
General Description
V
DS
= 30V
I
D
= 80A
• Low R
DS(ON)
GS
=10V
R
DS(ON)
=4.2m
Ω
（
typ.) @V
• RoHS and Halogen-Free Compliant
Applications
100% UIS Tested
100% R
g
Tested
• Load switch
• PWM
NF:DFN5x6-8L
Marking: 80N03F
Absolute Maximum Ratings
(T
A
=25°C Unless Otherwise Noted)
Parameter
Symbol
V
DS
Limit
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
±20
V
V
GS
80
46
A
A
I
D
Drain Current-Continuous(T
C
=100
℃
)
Pulsed Drain Current
(Note 1)
I
D
(100
℃
)
I
DM
200
A
Maximum Power Dissipation
65
W
P
D
Derating factor
Single pulse avalanche energy
(Note 5)
0.52
W/
℃
mJ
℃
E
AS
150
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
1.92
℃
/W
1/6
-Channel
N
TM80N03NF
Enhancement Mosfet
Electrical Characteristics (TC=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
30
–
–
–
–
–
1
V
μA
nA
I
GSS
–
±100
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
1
–
1.5
4.2
6.0
–
2.5
5.9
8.9
–
V
mΩ
S
V
GS
=10V, I
D
=20A
Drain-Source On-State Resistance
V
GS
=4.5V, I
D
=20A
V
DS
=5V,I
D
=20A
–
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
20
C
lss
C
oss
C
rss
–
–
–
1400
205
–
–
–
PF
PF
PF
V
DS
=15V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
177
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
9
8
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=15V,I
D
=20A
V
GS
=10V,R
GEN
=6Ω
Turn-Off Delay Time
28
5
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
32.3
4.9
6.9
V
DS
=15V,I
D
=20A,
Gate-Source Charge
V
GS
=10V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
I
S
V
GS
=0V,I
S
=20A
–
–
–
–
0.85
1.2
80
27
20
V
A
–
–
–
t
rr
nS
nC
TJ = 25°C, I
F
= 20A
di/dt = 100A/μs
(Note3)
Qrr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition
：
Tj=25
℃
,V
DD
=15V,V
G
=10V,L=0.5mH,Rg=25Ω
2/6
-Channel
N
TM80N03NF
Enhancement Mosfet
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
3
3/6
-Channel
N
TM80N03NF
Enhancement Mosfet
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure10 ID Current- Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
4
4/6
-Channel
N
TM80N03NF
Enhancement Mosfet
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
5/6
Package Mechanical Data:DFN5x6-8L
Common
Symbol
mm
Inch
Mim
1.03
0.34
0.824
4.80
4.11
4.80
5.95
5.65
1.60
Max
1.17
0.48
0.0970
5.40
4.31
5.00
6.15
5.85
/
Min
Max
0.0461
0.0189
0.082
0.2126
0.1697
0.1969
0.2421
0.2303
/
A
b
c
0.0406
0.0134
0.0324
0.1890
0.1618
0.1890
0.2343
0.2224
0.0630
D
D1
D2
E
E1
E2
e
1.27 BSC
0.05 BSC
L
0.05
0.38
0.38
3.30
/
0.25
0.50
0.50
3.50
0.18
0.0020
0.0150
0.0150
0.1299
/
0.0098
0.0197
0.0197
0.1378
0.0070
L1
L2
H
I
6/6
