Tritech-MOS-TM90P03NF

-Channel  

TM90P03NF  

P

Enhancement Mosfet  

General Description  

General Features  

=

D

• Low R

DS(ON)  

V

DS

= -30V

 

I -90  

A

• RoHS and Halogen-Free Compliant  

DS(ON)  

R

= 3.6m

Ω

(typ.) @ V

GS

=-10V  

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

NF:DFN5x6-8L  

Marking: 90P03  

Absolute Maximum Ratings  

(T

A

= 25

°

C Unless Otherwise Noted)  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

Value  

-30  

Unit  

V

V

GS  

Gate-Source Voltage  

±20  

V

T

C

=25°C  

-90  

I

D  

Continuous Drain Current  

A

T

C

=100°C  

-57  

-360  

Pulsed Drain Current

1  

A

I

DM  

Single Pulse Avalanche Energy

2  

Total Power Dissipation  

125  

mJ  

W

EAS  

P

D  

T

C

=25°C  

60  

Operating Junction and Storage Temperature Range  

-55 to 150  

°C  

T

J

,

T

STG  

Thermal Characteristics  

Parameter  

Symbol  

R

θJA  

Value  

55  

Unit  

°C/W  

°C/W  

Thermal Resistance from Junction-to-Ambient

3  

Thermal Resistance from Junction-to-Case  

R

θJC  

2.08  

1/6  

-Channel  

TM90P03NF  

P

Enhancement Mosfet  

Electrical Characteristics

(T

J

= 25°C, unless otherwise noted)  

Parameter  

Symbol  

Test Conditions  

Min. Typ. Max. Unit  

Static Characteristics  

V

(BR)DSS  

l

GSS  

Drain-Source Breakdown Voltage  

Gate-body Leakage current  

V

GS

= 0V, I

D

= -250µA  

V

DS

= 0V, V

GS

= ±20V  

-30  

–

–

–

±100  

-1  

V

–

nA  

T

J

=25°C  

T

J

=100°C  

–

–

Zero Gate Voltage Drain  

Current  

I

DSS  

V

GS(th)  

R

DS(on)  

g

fs  

V

DS

= -30V, V

GS

= 0V  

μA  

V

–

–

-100  

-2.5  

5.5  

6.9  

–

Gate-Threshold Voltage  

V

DS

= V

GS

, I

D

= -250µA  

V

GS

= -10V, I

D

= -30A  

-1.0  

-1.6  

3.6  

5.5  

90  

–

–

–

Drain-Source On-Resistance

4  

mΩ  

S

V

GS

= -4.5V, I

D

= -15A  

Forward Transconductance

4  

Dynamic Characteristics

5  

Input Capacitance  

V

DS

= -10V, I

D

= -30A  

C

iss  

C

oss  

C

rss  

R

g  

–

–

–

–

5070  

695  

580  

4

–

–

–

–

V

Output Capacitance  

pF  

f =1MHz  

Reverse Transfer Capacitance  

Gate resistance  

f =1MHz  

Ω

Switching Characteristics

5  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

–

–

–

146  

21.5  

39  

–

–

–

V

Gate-Source Charge  

Gate-Drain Charge  

nC  

ns  

I

D

= -30A  

t

d(on)  

Turn-On Delay Time  

–

23  

–

t

r  

t

d(off)  

t

f  

Rise Time  

–

–

–

15  

129  

28  

–

–

–

V

R

G

= 3

Ω

, I

D

= -30A  

Turn-Off Delay Time  

Fall Time  

Drain-Source Body Diode Characteristics  

Diode Forward Voltage

4  

I

S

= -30A, V

GS

= 0V  

–

–

–

–

–

-1.2  

-90  

V

A

V

SD  

I

S  

Continuous Source Current

 

T

C

=25°C  

Note :  

1. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C  

2. The EAS data shows Max. rating . The test condition is V

DD

= -25V, V

GS

= -10V, L= 0.1mH, I

AS

= -50A  

3. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the  

user’s specific board design.  

2/6  

-Channel  

TM90P03NF  

P

Enhancement Mosfet  

Typical Characteristics  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

Figure 3. Forward Characteristics of Reverse  

Figure 4. Gate Charge Characteristics  

Figure 5. R

DS(on)

vs. V

GS  

Figure 6. R

DS(on)

vs. I

D  

3

3/6  

-Channel  

TM90P03NF  

P

Enhancement Mosfet  

Figure 7. Capacitance Characteristics  

Figure 8. Safe Operating Area  

Figure 9. Normalized Maximum Transient Thermal Impedance  

Figure 10. Switching Time Waveform  

Figure 11. Unclamped Inductive Switching  

4

4/6  

-Channel  

TM90P03NF  

P

Enhancement Mosfet  

Test Circuit  

V

GS  

Qg  

V

DS  

Qgs  

V

GS  

Qgd  

DUT  

I

G

=const  

Figure A. Gate Charge Test Circuit & Waveforms  

R

L  

V

DS  

V

DD  

V

GS  

R

G

DUT  

V

GS  

Figure B. Switching Test Circuit & Waveforms  

L

V

DS  

I

D  

R

G

V

DD  

DUT  

V

GS  

tp  

Figure C. Unclamped Inductive Switching Circuit & Waveforms  

5/6  

Package Mechanical Data DFN5x6-8L  

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