Tritech-MOS-TM9968

Part #	Tritech-MOS-TM9968
Download	Tritech-MOS-TM9968

-Channel

N

Enhancement Mosfet

TM9968

General Features

General Description

V

DS

=1

0

0

V I

D

=15

A

• Low R

DS(ON)

• RoHS and Halogen-Free Compliant

R

DS(ON)

= 80m

Ω

(typ.) @ V

GS

= 10V

Applications

100% UIS Tested

100% R

g

Tested

• Load switch

• PWM

SI:SOT-89-3L

D

D

S

D

G

G

Marking: 15N10

OR 9968

Absolute Maximum Ratings

(T

A

= 25

°

C Unless Otherwise Noted)

Sy

m

b

ol

Parameter

Rating

Unit

Common Ratings

100

±

20

V

DSS

V

GSS

T

J

Drain-Source Voltage

Gate-Source Voltage

V

150

Maximum Junction

T

e

mperature

°

C

A

-55 to 150

3

T

STG

I

S

Storage

T

e

m

p

e

r

ature Range

Diode Continuous Forward Curren

T

A

=25

°

15

T

C

=25

°

C

T

C

=70

°

C

T

C

=25

°

C

T

A

=25

°

C

T

A

=70

°

C

t

≤

10s

I

D

Continuous Drain Current

Pulsed Drain Current

A

13

26

3.5

2.2

35

70

7

a

I

DM

A

P

D

Maximum Power Dissipation

W

°

C/W

°

C/W

A

c

R

θ

JA

Thermal Resistance-Junction to Ambient

Steady State

b

I

AS

Avalanche Current, Single pulse (L=0.5mH)

Avalanche Energ

y

,

S

ingle pulse (L=0.5mH)

b

E

AS

12

mJ

Note a

：

Pulse width limited by max. junction temperature.

Note b

：

UIS tested and pulse width limited by maximum junction temperature 150

o

C (initial temperature T

j

=25

o

C).

Note c

：

Surface Mounted on 1in

2

pad area.

1/7

-Channel

N

Enhancement Mosfet

TM9968

Electrical Characteristics

(T

A

= 25

°

C Unless Otherwise Noted)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

Static Characteristics

BV

DSS

Drain-Source Breakdown Voltage

100

–

–

–

V

µ

A

V

V

GS

=0V, I

DS

=250

µ

A

V

D

S

=80V, V

GS

=0V

–

–

1

I

DSS

Zero Gate Voltage Drain Current

T

J

=85

°

C

–

30

V

GS(t

h

)

Gate Threshold Voltage

I

GSS

Gate Leakage Current

1

–

2

3

V

D

S

=V

GS

, I

DS

=250

µ

A

V

GS

=

±

20V, V

DS

=0V

V

GS

=10V, I

DS

=4A

–

±

100

100

110

nA

–

80

85

m

Ω

m

Ω

d

R

DS(ON)

Drain-Source On-state Resistance

V

GS

=4.5V, I

D

S

=3.5A

Diode Characteristics

d

V

SD

t

rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I

SD

=3A, V

GS

=0V

–

–

–

0.8

27

36

1.3

V

–

–

ns

nC

I

SD

=3A, dl

SD

/dt=100A/

µ

s

Q

rr

Dynamic Characteristics

e

R

G

C

iss

C

oss

C

rss

Gate Resistance

V

GS

=0V,V

DS

=0V,f=1MHz

–

–

–

–

–

–

–

–

2.5

740

45

24

11

6

–

960

–

Ω

Input Capacitance

V

GS

=0V,

V

D

S

=30V,

F

r

e

quency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

pF

–

t

d(ON)

Turn-on Delay Time

t

r

Turn-on Rise Time

t

d

(

OF

F

)

Turn-off Delay Time

t

f

Turn-off Fall Time

Gate Charge Characteristics

e

20

11

49

10

V

D

D

=30V, R

L

=30

Ω

,

I

DS

=1A, V

GEN

=10V,

R

G

=6

Ω

ns

27

5

V

D

S

=30V, V

GS

=4.5V,

I

DS

=4A

Q

g

Total Gate Charge

–

7.7

–

Q

g

Q

gs

Q

gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

–

–

–

16

2.5

3

23

–

nC

V

D

S

=30V, V

GS

=10V,

I

DS

=4A

–

Note d

：

Pulse test ; pulse width

≤

300

µ

s, duty cycle

≤

2%.

Note e

：

Guaranteed by design, not subject to production testing.

2/7

-Channel

N

Enhancement Mosfet

TM9968

Typical Operating Characteristics

Power Dissipation

Drain Current

18

4.0

16

14

12

3.5

3.0

2.5

2.0

1.5

1.0

0.5

1

.

0

8.0

6.0

1

4.0

.

2.0

T =25

o

C

T

A

=25

o

C,V

G

=10V

A

0.0

0

20 40 60 80

100 120 140 160

0

20 40 60 80

100 120 140 160

T

j

– Junction

T

e

mperature (

°

C)

T

j

– Junction

T

e

mperature

Safe Operation Area

Thermal Transient Impedance

100

10

2

1

Duty = 0.5

0.2

0.1

0.05

0.02

300

µ

s

1

0.1

1ms

10ms

0.01

100ms

0.1

0.01

1s

DC

Single Pulse

Mounted on 1in

2

pad

T

A

=25

o

C

R

_{θ
JA
: 35
o
C/W}

0.01

0.01

0.1

1

10

100

800

1E-4 1E-3 0.01

0.1

1

10

60

V

DS

– Drain – Source Voltage (V)

Square Wave Puls

e

D

uration (sec)

3/7

-Channel

N

Enhancement Mosfet

TM9968

Output Characteristics

Drain-Source On Resistance

135

120

105

90

20

18

16

14

12

10

8

V

GS

=3.5,4,5,6,7,8,9,10V

V

GS

=4.5V

V

GS

=10V

3V

75

6

4

60

2

2.5V

3

0

0

45

1

2

4

5

0

4

8

12

16

V

DS

– Drain – Source Voltage (V)

I

D

–

D

rain Current (A)

Gate-Source On Resistance

Gate Threshold Voltage

120

110

100

90

1.6

1.4

1.2

1.0

0.8

0.6

0.4

I

DS

=4A

I

DS

=250

µ

A

80

70

2

-50 -25

0

25 50 75

100 125 150

3

4

5

6

7

8

9

10

V

GS

– Gate – Source Voltage (V)

T

j

– Junction

T

e

mperature (

°

C)

4/7

-Channel

N

Enhancement Mosfet

TM9968

Source-Drain Diode Forward

Drain-Source On Resistance

20

10

2.5

2.0

1.5

1.0

0.5

0.0

V

GS

= 10V

I

DS

= 4A

T

j

=150

o

C

T

j

=25

o

C

1

R

ON

@T

j

=25

o

C: 80m

Ω

0.1

-50 -25

0

25 50 75

100 125 150

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

T

j

– Junction

T

emperature (

°

C)

V

SD

– Source – Drain Voltage (V)

Capacitance

Gate Charge

3600

3200

2800

2400

2000

1600

1200

800

10

Frequency=1MHz

V

DS

= 30V

I

DS

= 8A

9

8

7

6

5

4

3

2

1

0

Ciss

400

Coss

Crss

0

0

8

16

24

32

40

0

10

20

30

40

50

V

DS

–

D

rain-Source Voltage (V)

Q

G

–

G

ate Charge (nC)

5/7

-Channel

N

Enhancement Mosfet

TM9968

Avalanche Test Circuit and Waveforms

V

DS

L

V

DSX(SUS)

t

p

DUT

V

DS

I

AS

R

G

V

DD

V

DD

I

L

tp

E

AS

0.01

Ω

t

AV

Switching Time Test Circuit and Waveforms

V

DS

R

D

DUT

V

DS

90%

V

GS

R

G

V

DD

10%

V

GS

tp

t

d

(on)

t

r

t

d

(off)

t

f

6/7

Package Mechanical Data:SOT-89-3L

7/7