Tritech-MOS-TMG05N10MI

Part #	Tritech-MOS-TMG05N10MI
Download	Tritech-MOS-TMG05N10MI

-Channel Enhancement Mosfet

N

TMG05N10M

General Description

General Features

• Low R

DS(ON)

V

DS

=100V I

D

=5.

2

A

• RoHS and Halogen-Free Compliant

)

R

DS(ON

=

9

5

m

Ω

(

ty

p

.) @ V

GS

10V

=

Applications

100% UIS Tested

100% R

g

Tested

• Load switch

• PWM

MI:SOT-23-3L

D

S

G

Marking: 1005S

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)

Symbol

V

DS

Parameter

Rating

100

Units

V

Drain-Source Voltage

V

GS

Gate-Sou

r

ce Voltage

±

20

V

I

D

@T

A

=25

℃

I

D

@T

A

=70

℃

I

DM

Continuous Drain Current, V

GS

@ 10V

1

Continuous Drain Current, V

GS

@ 10V

1

Pulsed Drain Current

2

5.2

A

2.2

A

11

A

P

D

@T

A

=25

℃

T

STG

Total Power Dissipation

3

1

W

℃

℃

Storage

T

e

mperature Range

Operating Junction Temperature Range

-55 to 150

-55 to 150

T

J

Thermal Data

Symbol

R

θ

JA

Parameter

Typ.

—

Max.

125

80

Unit

℃

/W

℃

/W

Thermal Resistance Junction-ambient

1

Thermal Resistance Junction-Case

1

R

θ

JC

—

1/5

-Channel Enhancement Mosfet

N

TMG05N10M

Electrical Characteristics

T

C

=25

℃

unless otherwise specified

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristic

V

(BR)DSS

I

DSS

Drain

–

Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

V

GS

= 0

V

,

I

D

= 250μA

V

DS

= 100

V

,

V

GS

= 0V

V

DS

= 0

V

,

V

GS

= ±20V

100

110

–

1

V

–

–

–

–

μA

nA

I

GSS

±100

On Characteristics

note3

V

GS(th)

Gate Threshold Voltage

R

DS(on)

Static Drain

–

Source On

–

Resistance

note2

Dynamic Characteristics

note4

V

DS

= V

GS

, I

D

= 250μA

V

GS

= 10

V

,

I

D

= 3A

1.0

2.0

95

3.0

V

–

140

mΩ

C

iss

C

oss

C

rss

Q

g

Input Capacitance

–

–

–

–

–

–

196

25.9

21.4

4.3

–

–

–

–

–

–

pF

pF

pF

nC

nC

nC

V

DS

= 50

V

,

V

GS

= 0

V

,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

T

o

tal Gate Charge

V

DS

= 50

V

,

I

D

= 3A,

V

GS

= 10V

Q

gs

Q

gd

Gate

–

Source Charge

Gate

–

Drain(“Miller”) Charge

3.5

3.1

Switching Characteristics

note4

t

d(on)

t

r

t

d(off)

t

f

Turn

–

On Delay Time

Turn

–

On Rise Time

Turn

–

Off Delay Time

Turn

–

Off Fall Time

–

–

–

–

14.7

3.5

–

–

–

–

ns

ns

ns

ns

V

DD

= 50

V

,

I

DS

=3A

R

G

= 2Ω, V

GEN

= 10V

20.9

2.7

Drain

–

Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain to Source Diode Forward Current

note2

Maximum Pulsed Drain to Source Diode Forward Current

–

–

–

–

–

–

–

–

5.2

12

1.3

–

A

A

I

SM

V

SD

t

rr

Drain to Source Diode Forward Voltage

note3

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Time Charge

Peak Reverse Recovery Current

V

GS

= 0

V

,

I

S

=3A

–

V

32.1

39.4

2.1

ns

nC

A

V

GS

= 0

V

,

I

F

= 3A,

di/dt =100A/μs

Q

rr

–

I

rrm

Notes:

–

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse

T

e

st: Pulse Width ≤ 300μs, Duty Cycle ≤2%.

4. Guaranteed by design, not subject to production

5. V

DD

=50

V

,

R

G

=50 Ω, L=0.3 mH, starting T

j

=25 °C

2/5

-Channel Enhancement Mosfet

N

TMG05N10M

Typical Characteristics

4

3

2

1

0

4

V

^{GS
= 10V}

^{GS
= 4.5V}

V

^{DS
= 5V}

V

3

2

1

0

V

^{GS
= 3.5V}

V

^{GS
= 2.5V}

V

^{GS
= 2V}

0

1

2

3

4

5

0

1

2

3

4

Gate−source voltage V

GS

(V)

Drain−source voltage V

DS

(V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

2

1.5

1

1200

900

600

300

0

I

D

= 2A

0.5

0

0

3

6

9

12

15

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Gate−source voltage V

GS

(V)

Source−drain voltage V

SD

(V)

Figure 3. Forward Characteristics of Reverse

Figure 4. R

DS(ON)

vs. V

GS

3/5

-Channel Enhancement Mosfet

N

TMG05N10M

500

400

300

200

100

0

2.5

2.0

1.5

1.0

0.5

0.0

V

^{GS
= 4.5V}

V

^{GS
= 10V}

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100 125 150

Drain current

I

-I

(

(

A

A

)

)

D

D

Temperature T

j

(

°

C

)

Figure 5. R

DS(ON)

vs. I

D

Figure 6. Normalized R

DS(on)

vs. Temperature

10000

1000

100

10

Ciss

Coss

Crss

F=1.0MHz

1

0

20

40

60

80

100

Drain-

source voltage V

DS

（

V

）

Figure 7. Capacitance Characteristics

Figure 8. Gate Charge Characteristics

4/5

Package Mechanical Data:SOT

–

23-3L

Dimensions In Millimeters

Symbol

Dimensions In Inches

Min.

1.050

0.000

1.050

0.300

0.100

2.820

1.500

2.650

Max.

1.250

0.100

1.150

0.500

0.200

3.020

1.700

2.950

Min.

Max.

0.049

0.004

0.045

0.020

0.008

0.119

0.067

0.116

A

A1

A2

b

0.041

0.000

0.041

0.012

0.004

0.111

0.059

0.104

c

D

E1

E

e

0.950(BSC)

0.037(BSC)

e1

L

1.800

0.300

0°

2.000

0.600

8°

0.071

0.012

0°

0.079

0.024

8°

θ

5/5