Tritech-MOS-TMG08N10SI
| Part # | Tritech-MOS-TMG08N10SI |
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TMG08N10SI
-Channel
N
Enhancement Mosfet
General Features
General Description
• Low R
DS(ON)
V
DS
=100V I
D
=8.0A
• RoHS and Halogen-Free Compliant
m
Ω
(
typ
.) @V
GS
= 10V
=
100
DS(ON)
R
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
SI:SOT-89-3L
D
S
D
G
Marking: 8N10
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
100
V
GS
Gate-Sou
r
ce Voltage
±
20
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
8
3.2
A
A
12
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
2
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
125
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1/5
TMG08N10SI
-Channel
N
Enhancement Mosfet
Electrical Characteristics
T
C
=25
℃
unless otherwise specified
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain
–
Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
= 0
V
,
I
D
= 250μA
V
DS
= 100
V
,
V
GS
= 0V
V
DS
= 0
V
,
V
GS
= ±20V
100
110
–
1
V
–
–
–
–
μA
nA
I
GSS
±100
On Characteristics
note3
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain
–
Source On
–
Resistance
note2
Dynamic Characteristics
note4
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10
V
,
I
D
= 3A
1.0
2.0
3.0
V
–
100
130
mΩ
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
206
28.9
1.4
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= 50
V
,
V
GS
= 0
V
,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
4.3
V
DS
= 50
V
,
I
D
= 3A,
V
GS
= 10V
Q
gs
Q
gd
Gate
–
Source Charge
Gate
–
Drain(“Miller”) Charge
1.5
1.1
Switching Characteristics
note4
t
d(on)
t
r
t
d(off)
t
f
Turn
–
On Delay Time
Turn
–
On Rise Time
Turn
–
Off Delay Time
Turn
–
Off Fall Time
–
–
–
–
14.7
3.5
–
–
–
–
ns
ns
ns
ns
V
DD
= 50
V
,
I
DS
=3A
R
G
= 2Ω, V
GEN
= 10V
20.9
2.7
Drain
–
Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward Current
note2
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
–
8.0
A
A
I
SM
V
SD
t
rr
12
Drain to Source Diode Forward Voltage
note3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Time Charge
Peak Reverse Recovery Current
V
GS
= 0
V
,
I
S
=3A
–
1.3
V
32.1
39.4
2.1
–
–
–
ns
nC
A
V
GS
= 0
V
,
I
F
= 3A,
di/dt =100A/μs
Q
rr
I
rrm
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse
T
e
st: Pulse Width ≤ 300μs, Duty Cycle ≤2%.
4. Guaranteed by design, not subject to production
5. V
DD
=50
V
,
R
G
=50 Ω, L=0.3 mH, starting T
j
=25 °C
2/5
TMG08N10SI
-Channel
N
Enhancement Mosfet
Typical Characteristics
4
3
2
1
0
4
V
GS
= 10V
GS
= 4.5V
V
DS
= 5V
V
3
2
1
0
V
GS
= 3.5V
V
GS
= 2.5V
V
GS
= 2V
0
1
2
3
4
5
0
1
2
3
4
Gate−source voltage V
GS
(V)
Drain−source voltage V
DS
(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2
1.5
1
1200
900
600
300
0
I
D
= 2A
0.5
0
0
3
6
9
12
15
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Gate−source voltage V
GS
(V)
Source−drain voltage V
SD
(V)
Figure 3. Forward Characteristics of Reverse
Figure 4. R
DS(ON)
vs. V
GS
500
2.5
2.0
1.5
1.0
0.5
0.0
400
300
200
100
0
V
GS
= 4.5V
V
GS
= 10V
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100 125 150
Drain current
I
-I
(
(
A
A
)
)
D
Temperature T
j
(
°
C
)
Figure 5. R
DS(ON)
vs. I
D
Figure 6. Normalized R
DS(on)
vs. Temperature
3
3/5
TMG08N10SI
-Channel
N
Enhancement Mosfet
10000
1000
100
Ciss
Coss
Crss
10
F=1.0MHz
1
0
20
40
60
80
100
Drain-
source voltage V
DS
（
V
）
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
4/5
Package Mechanical Data:SOT-89-3L
5/5
