Tritech-MOS-TMG60N10P
| Part # | Tritech-MOS-TMG60N10P |
Download  | Tritech-MOS-TMG60N10P |
-Channel
N
TMG60N10P
Enhancement Mosfet
General Features
General Description
V
DS
= 10
0
V
I
D
=60A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
R
DS(ON)
=13.8mΩ
(
typ
.
)
@ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
P:TO-220AB
D S
G
Marking: 60N10
Absolute Maximum Ratings
：
(T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
Units
Drain-Source Voltage
Gate-Source Voltage
100
V
V
A
A
V
GS
±
20
60
I
D
Continuous Drain Current
1)
, T
C
=25
℃
Pulsed drain current
2)
, T
C
=25
℃
98
I
D, pulse
96
65
P
D
E
AS
Power dissipation
3)
, T =25
W
mJ
℃
℃
C
Single pulsed avalanche energy
5)
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics
：
Symbol
R
ƟJC
Parameter
Max
Units
1.3
Thermal Resistance,Junction to Case
℃
/W
）
Thermal Resistance,Junction to Ambient
4
R
ƟJA
62
1/5
-Channel
N
TMG60N10P
Enhancement Mosfet
Electrical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
—
—
—
—
—
1
V
V
GS
=0V,I
D
=250
μ
A
V
GS
=0V, V
DS
=100V
V
GS
=
±
20V, V
DS
=0A
BV
DSS
I
DSS
μ
A
nA
—
±
100
I
GSS
On Characteristics
GATE-Source Threshold Voltage
Drain-Source On Resistance
V
GS
=V
DS
, I
D
=250
μ
A
V
GS
=10V,I
D
=10A
V
GS
=4.5V,I
D
=7A
1.4
—
—
2.5
20
26
V
V
GS(th)
13.8
17.4
m
Ω
R
DS(ON)
—
Dynamic Characteristics
Input Capacitance
—
—
—
1000
180
9.5
—
—
—
C
iss
C
oss
C
rss
V
DS
=50V, V
GS
=0V,
f=100KHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
—
—
—
—
—
—
—
—
16.6
3.8
75.5
46
—
ns
ns
ns
ns
nC
nC
nC
V
t
d(on)
t
r
t
d(off)
t
f
Rise Time
—
—
—
—
—
—
—
V
Ds
=50V, I
D
=5A,
V
GS
=10V,R
G
=10Ω
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate plateau voltage
16.2
2.8
4.1
3
Q
g
V
GS
=10V, V
DS
=50V,
I
D
=5A
Q
gs
Q
gd
V
plateau
Drain-Source Diode Characteristics
Source-Drain Diode Forward Voltage
V
GS
=0V,I
S
=12A
—
—
—
—
49
1.3
—
V
V
SD
trr
Reverse Recovery Time
Reverse Recovery Charge
Ns
nc
V
R
=50 V,I
S
=5 A,
61.8
—
qrr
di/dt=100 A/
μ
s
Peak reverse recovery current
—
2.4
—
A
I
rmm
Notes :
1) Calculated
continuous current based on maximum allowable junction temperature.
2) Repetitive
rating; pulse width limited by max. junction temperature.
3) Pd
is based on max. junction temperature, using junction-case thermal resistance.
4) The
value of R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,
in a still air environment with T
a
=25 °C.
5) V
DD
=50 V,V
GS
=10 V, L=0.3 mH, starting T
j
=25 °C.
2/5
-Channel
N
TMG60N10P
Enhancement Mosfet
Typical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
V
GS
= 10 V
V
GS
= 7 V
V
DS
= 10 V
T
j
= 25 ℃
V
GS
= 6V
100
50
0
T
j
= 25 ℃
V
GS
= 5.5 V
100
10
1
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
8
0.1
0
2
4
6
10
2
4
6
8
V
DS
, Drain-source voltage (V)
V
GS
, Gate-source voltage(V)
Figure 1. Typ. output characteristics
Figure 2. Typ. transfer characteristics
10.0
7.5
5.0
2.5
0.0
I
D
= 5 A
10
4
10
3
10
2
10
1
f
= 100 kHz
V
GS
= 0 V
V
DS
= 50 V
C
iss
C
oss
C
rss
0
20
40
60
80
100
0
5
10
15
20
V
DS
, Drain-source voltage (V)
Q
g
, Gate charge(nC)
Figure 3. Typ. capacitances
Figure 4. Typ. gate charge
120
30.0m
25.0m
20.0m
15.0m
10.0m
5.0m
I
D
= 250 μA
I
D
= 10 A
V
GS
= 0 V
V
GS
= 10 V
115
110
105
100
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction temperature (℃)
T
j
, Junction Temperature (℃)
Figure 5. Drain-source breakdown voltage
Figure 6. Drain-source on-state resistance
3/5
-Channel
N
TMG60N10P
Enhancement Mosfet
100.0m
T
j
= 25 ℃
100
10
1
80.0m
V
GS
=3.5 V
4.0 V
5.0V
7.0
V
1
0.0V
4.5 V
6.0V
5.5V
60.0m
40.0m
20.0m
0.0
50
100
150
0.5
1.0
1.5
I
D
, Drain current(A)
V
SD
, Source-Drain voltage (V)
Figure 7. Drain-source on-state resistance
Figure 8. Forward characteristic of body diode
32
28
24
20
16
12
8
100
10 μs
10
100 μs
R
DS(ON)
Limited
1 ms
10 ms
DC
1
0.1
4
0.01
0
0.1
1
10
100
0
20
40
60
80
100
120
140
T
C
, Case Temperature (℃)
V
DS
, Drain-source voltage(V)
Figure 9. Drain current
Figure 10. Safe operation area T
C
=25 °C
4/5
:TO-220AB
Package Information
E
A
A1
E1
E/2
A2
b
e
c
b2
S
Y
M
B
O
L
TO-220
RECOMMENDED LAND PATTERN
MILLIMETERS
MIN.
INCHES
MAX.
4.83
1.40
2.92
1.02
1.78
0.61
MIN.
MAX.
0.190
0.055
0.115
0.040
0.070
0.024
0.650
0.355
0.537
0.420
0.350
2.54
A
3.56
0.51
2.03
0.38
1.14
0.36
0.140
0.020
0.080
0.015
0.045
0.014
0.560
0.330
0.480
0.380
0.270
A1
A2
b
b2
c
D
14.22
8.38
16.51
9.02
UNIT: mm
D1
D2
E
12.19
9.65
13.65
10.67
8.89
E1
e
6.86
2.54 BSC
0.100 BSC
0.230
0.500
–
0.270
0.580
0.250
0.161
0.135
5.84
12.70
–
6.86
14.73
6.35
H1
L
L1
P
0.139
0.100
3.53
2.54
4.09
Q
3.43
Note: Follow JEDEC TO-220 AB.
5/5
