Tritech-MOS-TMG80N10D

-Channel  

N

TMG80N10D  

Enhancement Mosfet  

General Features  

General Description  

V

DS

=100V I

D

= 80A  

• Low R  

DS(ON)  

m

Ω

(

typ

.) @ V

 

= 10V  

R

DS(ON)

=

7.2  

• RoHS and Halogen-Free Compliant  

GS  

Applications  

100% UIS Tested  

100% R

g

Tested  

• Load switch  

• PWM  

D:TO-252-3L  

D

D

S

G

Marking G80N10  

Maximum Ratings at Tc=25°C unless otherwise specified  

Value  

Characteristics  

Symbol  

Unit  

Drain-Source Voltage  

V

DS  

V

GS  

I

D  

100  

±

20  

80  

V

V

A

A

Gate-Source Voltage  

Continue Drain Current  

Pulsed Drain Current (Note1)  

Power Dissipation  

320  

I

DM  

P

D  

W

110  

132  

mJ  

Single Pulse Avalanche Energy (Note1)  

Operating Temperature Range  

E

AS  

T

J  

150  

°C  

°C  

Storage Temperature Range  

T

STG  

-55 to +150  

Thermal Resistance, Junction to Case  

°C/W  

°C/W  

R

θ  

1.1  

62  

JC  

R

Thermal Resistance, Junction to Ambient  

R

θ  

JA  

Note1:Pulse test: 300 µs pulse width, 2 % duty cycle  

1/4  

-Channel  

N

TMG80N10D  

Enhancement Mosfet  

Electrical Characteristics at Tc=25°C unless otherwise specified  

Characteristics  

Drain-Source Breakdown Voltage  

Drain-Source Leakage Current  

Gate Leakage Current  

Test Condition  

V

GS

= 0 V,I

D

= 250 µA  

V

DS

= 100 V, V

GS

= 0 V  

V

GS

= ± 20 V, V

DS

= 0 V  

V

DS

= V

GS

, I

D

= 250 µA  

Symbol Min  

Typ Max Unit  

BV

DSS  

I

DSS  

100  

–

–

–

–

–

1

V

µA  

nA  

V

–

–

I

GSS  

±

100  

2.5  

Gate-Source Threshold Voltage  

V

GS(th)  

1

Drain-Source On-State Resistance  

VGS=10V, ID=30A  

V

DS

= 5 V, I

D

= 30 A  

RDS(on)  

–

7.2  

8.7  

mΩ  

Forward Transconductance  

Input Capacitance  

gfs  

–

–

–

–

–

–

–

–

–

–

–

50  

2000  

511  

12  

–

–

–

–

–

–

–

–

–

–

–

S

C

iss  

pF  

pF  

pF  

ns  

ns  

ns  

ns  

nC  

nC  

nC  

Output Capacitance  

VDS=15V , VGS=0V , f=1MHz

 

C

oss  

Reverse Transfer Capacitance  

Turn-on Delay Time(Note2)  

Rise Time(Note2)  

C

rss  

t

d(ON)  

17  

VDD=50V , VGS=10V , RG=3  

Ω

ID=30A  

t

r  

20  

Turn-Off Delay Time(Note2)  

Fall Time(Note2)  

t

d(OFF)  

60  

t

f  

18  

Total Gate Charge(Note2)  

Gate to Source Charge(Note2)  

Gate to Drain Charge(Note2)  

Q

G  

10  

VDS=50V , VGS=10V ,  

ID=30A  

14  

Q

GS  

Q

GD  

28  

Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified  

Characteristics  

Test Condition  

Symbol Min.

 

Typ. Max.

 

Unit  

Maximun Body-Diode Continuous Current  

I

S  

–

–

–

–

–

80  

320  

–

A

A

V

Maximun Body-Diode

 

Pulsed  

Current(Note2)  

I

SM  

V

SD  

Drain-Source Diode Forward Voltage  

VGS=0V , IS=30A , TJ=25

℃

 

0.85  

Note2:Pulse test: 300 µs pulse width, 2 % duty cycle  

2/4  

-Channel  

N

TMG80N10D  

Enhancement Mosfet  

RATINGS AND CHARACTERISTIC CURVES  

3/4  

Package Information:TO-252-3L  

Dimensions In Millimeters  

Dimensions In Inches  

Min.  

Symbol  

Min.  

2.200  

0.000  

0.660  

0.460  

6.500  

5.100  

Max.  

2.400  

0.127  

0.860  

0.580  

6.700  

5.460  

Max.  

0.094  

0.005  

0.034  

0.023  

0.264  

0.215  

A

A1  

b

0.087  

0.000  

0.026  

0.018  

0.256  

0.201  

c

D

D1  

D2  

E

4.830 TY

P

.  

0.190 TY

P

.  

6.000  

2.186  

9.800  

6.200  

2.386  

0.236  

0.086  

0.386  

0.244  

0.094  

0.409  

e

L

10.400  

L1  

L2  

L3  

L4  

Φ

θ

2.900 TY

P

.  

1.600 TY

P

.  

0.114 TY

P

.  

0.063 TY

P

.  

1.400  

1.700  

0.055  

0.067  

0.600  

1.100  

0°  

1.000  

1.300  

8°  

0.024  

0.043  

0°  

0.039  

0.051  

8°  

h

0.000  

0.300  

0.000  

0.012  

V

5.350 TY

P

.  

0.211 TY

P

.  

4/4