Tritech-MOS-TMH3025DF
| Part # | Tritech-MOS-TMH3025DF |
Download  | Tritech-MOS-TMH3025DF |
N
N+
-Channel
TMH3025DF
Enhancement Mosfet
General Description
Product Summary
• Low R
DS(ON)
V
DS
= 30V
I
D
=25A
• RoHS and Halogen-Free Compliant
mΩ
@ V
GS
=10V
(
Typ
.)
R
DS(ON)
= 14
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
DF:DFN3x3_8L
Marking:304
(T =25°C Unless Otherwise Noted)
A
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
30
Units
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
A
A
V
GS
±
20
25
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
10
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
56
12.1
A
mJ
A
I
DM
EAS
I
AS
P
D
@T
C
=25
℃
T
STG
48
Total Power Dissipation
4
6.0
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-ambient
1
—
75
℃
/W
R
θJA
1/5
N
N+
-Channel
TMH3025DF
Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
GS
=0V, I
D
=250μA
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
30
–
–
–
–
–
1
V
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
1.0
1.5
14
18
2.5
20
29
V
–
–
mΩ
mΩ
Static Drain-Source on-Resistance
R
DS(on)
note2
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
490
79
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=15V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
61
5.2
0.9
1.3
V
DS
=15V, I
D
=5.8A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Switching Characteristics
Turn-on Delay Time
–
–
–
–
4.5
2.5
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=15V, I
D
=3A,
V
GS
=10V, R
REN
=3Ω
14.5
3.5
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
12
48
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
= 12A
V
SD
1.2
Voltage
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Conditions
Min.
Typ.
Max.
25
Unit
A
I
S
—
—
—
—
—
—
V
G
=V
D
=0V , Force Current
I
SM
V
SD
56
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
1.2
V
Note :
1.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating . The test condition i
s
V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=21A
4.
The power dissipation is limited by 150
℃
junctio
n
t
emperature
5.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/5
N
N+
-Channel
TMH3025DF
Enhancement Mosfet
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
25
I
D
(A)
25
20
10V
4.5V
20
3V
2.5V
15
15
10
125
℃
25
℃
10
5
2V
5
V
GS
(V)
V
DS
(V)
0
0
0
1
2
3
4
5
0
1.0
2.0
3.0
4.0
5.0
6.0
1.8
25
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain
Current
R
DS(ON)
(mΩ)
I
S
(A)
40
32
24
16
10
3
10
2
V
GS
=4.5V
T
J
=125
℃
T
J
=25
℃
V
GS
=10V
10
1
10
0
8
0
V
GS
=0V
1.6
I
D
(A)
V
SD
(V)
1.0
0.2
0.4
0.6
0.8
1.2
1.4
0
3
6
9
12
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
C(pF)
V
GS
(V)
10
8
V
DS
=15V
I
D
=5.8A
C
iss
1000
6
4
C
oss
100
10
C
rss
2
0
V
DS
(V)
Q
g
(nC)
0
1
2
3
4
5
6
0
5
10
15
20
3/5
N
N+
-Channel
TMH3025DF
Enhancement Mosfet
Figure 7:
Normalized Breakdown Voltag
e
v
s.
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drai
n
C
urrent
vs. Ambient Temperature
I
D
(A
)
I
D
(A
)
15
100
10
1
1μs
12
9
10μs
100μs
Limited by R
DS(on)
1ms
6
10m
T
A
=25
℃
Single pulse
0.1
3
0
D
T
A
(
℃
)
75 100
V
DS
(V)
0.01
0
25
50
125
150
175
0.01
0.1
1
10
100
Figure.11
:
Maximu
m
E
ffective Transien
t
T
hermal
Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t1
t2
10
-1
10
-2
Notes
Single pulse 1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
4/5
_
8L
:
Package Mechanical Data DFN3x3
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
5/5
