Tritech-MOS-TMN10010DF
| Part # | Tritech-MOS-TMN10010DF |
Download  | Tritech-MOS-TMN10010DF |
TMN10010DF
-Channel Enhancement
Mosfet
N
General Description
General Features
V
DS
=10
0
V I
D
=10
A
• Low R
DS(ON)
95m
R
DS(ON)
=
W
(
typ
.) @ V
GS
= 10V
• RoHS and Halogen-Free Compliant
Applications
100% UIS Tested
100% R
g
Tested
• Load switch
• PWM
DF:DFN3x3_8L
Marking:10N10
Absolute Maximum Ratings
(T
A
= 25°C, unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
Units
Drain-Sourc
e
V
o
ltage
Gate-Source
V
o
ltage
100
V
V
V
GS
±
20
Continuous Drain Current-Continuous (TC=25
℃
)
Continuous Drain Current-TC=100
℃
Drain Current
–
Pulsed
1
10
I
D
A
3.1
I
DM
E
AS
20
A
mJ
SinglePulse
A
valancheEnergy
2
—
Power Dissipation (TC=25
℃
)
3.5
2
W
P
D
Power Dissipation
–
Derate above 25
℃
Operating and Storage Junction
T
emperature Range
W/
℃
℃
T
J
, T
STG
-55 to +150
Thermal Characteristics
：
Symbol
R
Ɵ
JC
Parameter
Max
—
Units
Thermal Resistance,Junction to Case
℃
/W
R
Ɵ
JA
Thermal Resistance,Junction to Ambient
81
1/6
-Channel Enhancement
Mosfet
N
TMN10010DF
Electrical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Symbol
Off Characteristics
BV
DSS
Parameter
Conditions
Min
Typ
Max Units
Drain-Sourtce Breakdown Vol
t
a
ge
Drain-Source Leakage Current
Gate-
S
o
urce Leakage Current
V
GS
=0V,
I
D
=250
μ
A
100
—
—
—
—
1
V
V
GS
=0V, V
DS
=80V, T
J
=25
℃
V
GS
=0V, V
DS
=80V, T
J
=55
℃
V
GS
=
±
20V, V
DS
=0A
μ
A
μ
A
nA
I
DSS
10
—
—
±
100
I
GSS
On Characteristics
V
GS(th)
3.0
120
130
—
G
A
TE-Source Threshold Vo
l
t
a
ge
Drain-Source On Resistance
3
Forward
T
r
a
n
sconductance
V
GS
=V
DS
, I
D
=250
μ
A
V
GS
=10V,
I
D
=3.2A
V
GS
=4.5V,
I
D
=2.6A
V
DS
=15V,
I
D
=3.2A
1
2.5
95
120
8
V
m
Ω
S
—
—
—
R
DS(ON)
G
FS
Dynamic Characteristics
Input
C
a
p
acitance
—
—
—
1514
56
—
—
—
C
iss
C
oss
C
rss
Output Capaci
t
a
nce
V
DS
=15V, V
GS
=0V, f=1MHz
pF
Re
v
e
r
se Tr
a
n
sfer C
a
p
acitance
54
Switching Characteristics
T
u
rn-On Del
a
y
T
ime
3.4
—
—
—
—
—
—
—
7
—
—
—
—
—
—
—
ns
ns
ns
ns
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 50 V, R
L
= 15.7 Ω,
I
D
= 3.2 A,
V
GEN
= 10 V, R
GEN
= 6 Ω
Rise Time
3.4
5
T
u
rn-Off Del
a
y
T
i
m
e
3.4
Fall Ti
m
e
3.4
31
7
T
o
tal Gate Charge
3.4
Gate-
S
o
urce Charge
3.4
Gat
e
–
D
rain
“
Miller
”
Charg
e
3.4
8.8
3.4
2.9
Q
g
V
DS
=50V , V
GS
=4.5V ,
I
D
=3.2A
Q
gs
Q
gd
Drain-Source Diode Characteristics
Source-Drain Diode Forward Vol
t
a
ge
2
V
GS
=0V , I
S
=2.3A , T
J
=25
℃
—
0.81
—
V
V
SD
Notes:
a. Pulse
test: PW <= 300us duty cycle <= 2%.
b. Guaranteed
by design, not subject to production testing.
2/6
TMN10010DF
-Channel Enhancement
Mosfet
N
Typical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
0.3
0.2
0.1
0
10
TJ = 25
°
C
8
3V
6
4
3.5V,4V,4.5V,6V,8V,10V
2
0
0
1
2
3
4
5
0
1
2
3
4
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
VGS – Gate-to-Source Voltage (V)
2. Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
0
100
10
TJ = 25
°
C
ID = 3.2A
TJ = 25
°
C
1
0.1
0.01
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
3/6
TMN10010DF
-Channel Enhancement
Mosfet
N
4
2000
1800
1600
1400
1200
1000
800
F = 1MHz
10V,8V,6V,4.5V,4V,3.5V
Ciss
3
2
1
0
3V
600
400
200
Coss
Crss
0
0
0.2
0.4
0.6
0.8
0
5
10
15
20
VDS – Drain-to-Source Voltage (V)
VDS-Drain-to-Source Voltage (V)
5. Output Characteristics
6. Capacitance
10
8
2.5
2
VDS = 50V
ID = 3.2A
6
1.5
1
4
2
0
0.5
0
5
10
15
20
-50 -25
0
25
50
75 100
125 150
Qg – Total Gate Charge (nC)
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
10
60
40
20
0
10 uS
100 uS
1 mS
10 mS
100 mS
1 SEC
10 SEC
100 SEC
DC
1
0.1
0.01
Idm limit
Limited by
RDS
0.1
1
10
100
1000
0.001 0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
4/6
-Channel Enhancement
Mosfet
TMN10010DF
N
1
D = 0.5
R
θ
JA
(t) = r(t) + R
θ
JA
0.2
0.1
0.05
0.02
Single Pulse
R
θ
JA
= 81
°
C /W
0.1
0.01
P(pk)
t
1
t
2
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
5/6
Package Mechanical Data:DFN3x3-8L
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
6/6
