Tritech-MOS-TMN10010MSI
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TMN10010MSI
-Channel
N
Enhancement Mosfet
General Description
General Features
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
=10A
V
DS
= 100V
I
D
(
typ
.)
R
DS(ON)
=75
mΩ
@ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
MSI:SOT-223-3L
D
S
D
G
Marking:10N10
Absolute Maximum Ratings
：
(T
A
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
100
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
±
20
10
Continuous Drain Curren
1
I
D
Continuous Drain Current-T
A
=70
℃
1
Pulsed Drain Current
2
4
A
I
DM
P
D
24
Power Dissipation
4
2.5
W
mJ
℃
E
AS
Single pulse avalanche energy
3
Operating and Storage Junction Temperature Range
10.1
-55-+150
T
J
, T
STG
Thermal Characteristics
：
Symbol
R
ƟJA
Parameter
Thermal Resistance,Junction to ambien
Max
Units
50
℃
/W
1/5
TMN10010MSI
-Channel
N
Enhancement Mosfet
Electrical Characteristics
：
(T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
V
GS
=0V,I
D
=250
μ
A
V
GS
=0V, V
DS
=80V
V
GS
=
±
20V, V
DS
=0A
100
—
—
—
—
—
10
V
BV
DSS
I
DSS
μ
A
nA
—
I
GSS
±
100
On Characteristics
GATE-Source Threshold Voltage
Drain-Source On Resistance
2
V
GS
=V
DS
, I
D
=250
μ
A
V
GS
=10V,I
D
=5A
1.2
—
—
75
95
2.9
90
V
V
GS(th)
m
Ω
m
Ω
R
DS(ON)
V
GS
=4.5V,I
D
=3A
—
110
Dynam c Character st cs
i i
i
Input Capacitance
—
—
—
1008
31
—
—
C
iss
C
oss
C
rss
Output Capacitance
V
DS
=50V, V
GS
=0V, f=1MHz
pF
Reverse Transfer Capacitance
22
—
Switching Characteristics
Turn-On Delay Time
—
—
—
—
—
—
—
37
25.7
15
—
—
—
—
—
—
—
ns
ns
ns
ns
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
Rise Time
V
DS
=50V, I
D
=5A,
Turn-Off Delay Time
Fall Time
R
ENG
=3
Ω
,V
GS
=10V
8.7
Total Gate Charge
Gate-Source Charge
Gate-Drain “Miller” Charge
16.3
3.67
2.96
Q
gs
Q
gd
Q
g
V
GS
=10V, V
DS
=50V,
I
D
=5A
Drain-Source Diode Characteristics
Diode Forward Voltage
2
V
GS
=0V, I
SD
=1A
VD=VG=0V
—
—
—
—
—
—
1.2
10
24
V
A
A
V
SD
I
S
Continuous Drain Curren
1,5
Pulsed Drain Current
2,5
I
SM
Notes:
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=1mH,I
AS
=4.5A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/5
TMN10010MSI
-Channel
N
Enhancement Mosfet
Typical Characteristics
：
(T
A
=25
℃
unless otherwise noted)
25
V
GS
=10V
V
GS
=7V
20
V
GS
=5V
15
V
GS
=4.5V
10
5
V
GS
=3V
0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
30
25
20
15
10
5
T
J
=150
℃
T
J
=25
℃
0
0
0.3
0.6
0.9
1.2
V
SD
, Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Source Drain Forward Characteristics
Fig.6 Normalized R
DSON
vs T
J
Fig.5 Normalized V
GS(th)
vs T
J
3/5
TMN10010MSI
-Channel
N
Enhancement Mosfet
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
0.01
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
4/5
Package Mechanical Data:SOT-223-3L
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
Max.
Min.
Max.
A
A1
A2
b
1.52
1.8
0.06
0.049
0.000
1.5
0.100
1.7
0.000
0.059
0.026
0.010
0.244
0.114
0.130
0.269
0.004
0.045
0.032
0.014
0.252
0.122
0.146
0.278
0.66
0.25
6.2
0.82
0.35
6.4
c
D
D1
E
2.9
3.1
3.3
3.7
E1
e
6.83
7.07
2.300(BSC)
0.037(BSC)
e1
L
4.500
0.900
0°
4.700
1.15
10°
0.177
0.035
0°
0.185
0.045
10°
θ
5/5
