Tritech-MOS-TMN10010S

TMN10010S  

-Channel  

N

Enhancement Mosfet  

General Description  

General Features  

=10A  

• Low R  

DS(ON)  

V

DS

= 100V

 

I

D  

• RoHS and Halogen-Free Compliant  

(

t

yp

.)  

Applications  

R

DS(ON)

=88m

Ω  

@V

GS

= 10V  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

S:SOP-8L  

D1  

D

D

D

D

PIN1  

S

G1  

S

S

PIN1  

G

S1  

Marking:10N10  

Absolute Maximum Ratings

(T

A

= 25

°

C Unless Otherwise Noted)  

Symbol  

V

DS  

Parameter  

Rating  

Units  

V

Drain-Source Voltage  

100  

V

GS  

Gate-Sou

r

ce Voltage  

±

20  

V

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Pulsed Drain Current

2  

10  

A

I

D

@T

C

=25

℃  

I

D

@T

C

=100

℃  

I

DM  

5

A

10  

6.1  

A

EAS  

Single Pulse Avalanche Energy

3  

Total Power Dissipation

3  

mJ  

W

℃

℃

P

D

@T

A

=25

℃  

T

STG  

5

Storage Temperature Range  

Operating Junction Temperature Range  

-55 to 150  

-55 to 150  

T

J  

Thermal Data  

S

y

mbol  

R

θJA  

Parameter  

T

yp

.  

—  

Max.  

125  

3.6  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-ambient

1  

Thermal Resistance Junction-Case

1  

R

θJC  

—  

1/5  

TMN10010S  

-Channel  

N

Enhancement Mosfet  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ. Max. Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

=250μA  

V

DS

=100V, V

GS

=0V,  

V

DS

=0V, V

GS

=±20V  

100  

–

–

–

–

V

–

–

1.0  

μA  

nA  

I

GSS  

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=3A  

V

GS

=4.5V, I

D

=2A  

1.0  

1.5  

88  

2.5  

115  

140  

V

–

–

mΩ  

mΩ  

Static Drain-Source on-Resistance  

R

DS(on)  

note3  

100  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

610  

40  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

=25V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

25  

12  

V

DS

=50V, I

D

=2A,  

V

GS

=10V  

Q

gs  

Q

gd  

Gate-Source Charge  

2.2  

2.5  

Gate-Drain(“Miller”) Charge  

Switching Characteristics  

t

d(on)

Turn-on Delay Time  

t

r  

t

d(off)  

t

f  

–

–

–

–

7

5

–

–

–

–

ns  

ns  

ns  

ns  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

V

DS

=50V, I

D

=3A,  

R

G

=1.8Ω, V

GS

=10V  

16  

6

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

–

–

10  

12  

1.2  

–

A

A

Current  

I

SM  

V

SD  

trr  

Maximum Pulsed Drain to Source Diode Forward Current  

Drain to Source Diode Forward  

V

GS

=0V, I

S

=3A  

–

V

Voltage  

Body Diode Reverse Recovery Time  

21  

21  

ns  

nC  

I

F

=3A, dI/dt=100A/μs  

Body Diode Reverse Recovery  

Charge  

Qrr  

–

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  

2.

EAS condition : T

J

=25

℃

,V

DD

=50V,V

G

=10V,L=0.5mH,Rg=25Ω,I

AS

=4A  

3.  

Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  

2/5  

TMN10010S  

-Channel  

N

Enhancement Mosfet  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

I

D

(A)  

I

D

(A)  

20  

20  

15  

4.5V  

4V  

10V  

15  

125

℃

 

3V  

10  

10  

5

2V  

25

℃  

5

V

DS

(V)  

V

GS

(V)  

0

0

0

2

4

6

8

10  

12  

0

1.0  

2.0  

3.0  

4.0  

5.0  

6.0  

Figure 3:

On-resistance vs. Drain Current  

Figure 4

: Body Diode Characteristics  

R

DS(ON)

(mΩ)  

I

S

(A)  

120  

110  

100  

90  

10

3  

V

GS

=4.5V  

10

2  

T

J

=125

℃  

T

J

=25

℃  

10

1  

10

0  

V

GS

=10V  

80  

70  

V

GS

=0V  

1.6  

I

D

(A)  

2

V

SD

(V)  

1.0  

0.2  

0.4  

0.6  

0.8  

1.2  

1.4  

1.8  

0

1

3

4

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

V

GS

(V)  

C(pF)  

10

4  

10  

8

V

DS

=50V  

I

D

=2A  

10

3  

10

2  

10

1  

C

iss  

6

4

C

oss  

2

0

C

rss  

V

DS

(V)  

Q

g

(nC)  

0

2

4

6

8

10  

12  

0

10  

20  

30  

40  

50  

3/5  

TMN10010S  

-Channel  

N

Enhancement Mosfet  

Figure 7:

Normalized Breakdown Voltage vs.  

Figure 8:

Normalized on Resistance vs.  

Junction Temperature  

Junction Temperature  

V

BR(DSS)  

R

DS

(on)  

2.5  

1.3  

1.2  

1.1  

1.0  

2.0  

1.5  

1.0  

0.5  

0.9  

Tj (

℃

)  

Tj (

℃

)  

0

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 10:

Maximum Continuous Drain Current  

Figure 9:

Maximum Safe Operating Area  

vs. Ambient Temperature  

I

D

(A

)  

I

D

(A

)  

10

1  

10

0  

3.6  

1μs  

3.0  

2.4  

1.8  

1.2  

10μs  

100μ  

s

1m  

10  

s

10

-1  

Limited by R

DS(on)  

m

s

DC  

10

-2  

10

-3  

T

A

=25

℃  

Single pulse  

0.6  

0

V

DS

(V )  

10  

T

A

(

℃

)  

75 100  

0.1  

1

100  

0

25  

50  

125  

150  

175  

Figure.11:

Maximum Effective Transient Thermal  

Impedance, Junction-to-Ambient  

Zth

J-A

(

℃

/W)  

10

2  

10

1  

10

0  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

D=0.05  

D=0.02  

D=0.01  

10

-1  

10

-2  

Notes:  

Single pulse 1.Duty factor D=t1/t2  

2.Peak T  

J

=P

DM

*Z

thJA

+T

A  

T

P

(s)  

10

-3

10

-2  

10

-6  

10

-5  

10

-4  

10

-1  

10

0  

10

1  

.

4/5  

Package Mechanical Data-SOP-8L  

5/5