Tritech-MOS-TMN2012S
| Part # | Tritech-MOS-TMN2012S |
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TMN2012S
-Channel
N
Enhancement Mosfet
General Description
General Features
=10A
• Low R
DS(ON)
V
DS
= 20V I
D
DS(ON)
=12m
Ω
• RoHS and Halogen-Free Compliant
(
t
yp
.)
R
@V
GS
= 10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
S:SOP-8L
D1
D
D
D
D
PIN1
S
G1
S
S
PIN1
G
S1
Marking:10N02 OR 2010
Absolute Maximum Rating
(T
A
=25°C un
less otherwise noted)
Parameter
Symbol
Value
20
Unit
V
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
GS
±12
V
I
D
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
T
A
= 25°C
T
A
= 25°C
10
A
I
DM
20
A
P
D
2.25
W
°C
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
Thermal Characteristics
Parameter
Symbol
R
θJA
Value
Unit
Thermal Resistance from Junction to Ambient
2
90
°C/W
1/5
-Channel
N
TMN2012S
Enhancement Mosfet
Electrical Characteristics
(T
J
=25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min.
Typ. Max.
Unit
Static Characteristics
BV
DSS
I
GSS
Drain-Source Breakdown Voltage
Gate Leakage Current
V
GS
= 0 V, I
D
= 250µA
V
GS
= ±12V, V
DS
= 0 V
V
DS
= 20V, V
GS
= 0 V
V
GS
= V
DS,
I
D
= 250µA
V
GS
= 4.5V, I
D
=5A
20
–
–
–
±100
1
V
nA
µA
V
–
I
DSS
Drain Cut-off Current
–
–
V
GS(th)
Gate Threshold Voltage
0.45
0.7
12
17
28
1
–
–
–
15
21
50
Drain-Source On-State Resistance
3
V
GS
= 2.5V, I
D
= 4.7A
V
GS
= 1.8V, I
D
= 4.3A
mΩ
R
DS(on)
Dynamic Characteristics
4
C
iss
C
oss
C
rss
Input Capacitance
–
–
–
700
120
105
–
–
–
V
GS
= 0V, V
DS
= 10V,
Output Capacitance
pF
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
4
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
–
–
–
–
–
–
–
10.5
2
–
–
–
–
–
–
–
V
GS
= 4.5V, V
DS
= 10V,
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
nC
I
D
= 5A
2.5
10
20
32
12
Rise Time
V
GEN
= 5V, V
DD
= 10V,
ns
I
D
= 5A,R
G
= 3
Ω,
t
d(off)
t
f
Turn-Off Time
Fall Time
Source-Drain Diode Characteristics
Body Diode Voltage
3
V
SD
I
S
I
S
=4A, V
GS
= 0V
–
–
–
–
1.2
10
V
A
Continuous Source Current
Notes:
1. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the
user’s specific board design.
3.
Pulse Test: Pulse width≤300μs, duty cycle≤2%
.
4. This value is guaranteed by design hence it is not included in the production test.
2
2/5
-Channel
N
Enhancement Mosfet
TMN2012S
Typical Characteristics
20
20
15
10
5
VDS= 3V
V
GS
= 4.5V
V
GS
= 2.5V
GS
= 2V
V
15
10
5
V
GS
= 1.5V
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
10
100
80
60
40
20
0
I
D
= 5A
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
Gate−source voltage V
GS
(V)
Source−drain voltage V
SD
(V)
Figure 3. Forward Characteristics of Reverse
Figure 4. R
DS(ON)
vs. V
GS
50
2.0
1.5
1.0
0.5
40
V
GS
= 1.8V
30
20
10
0
V
GS
= 2.5V
V
GS
= 4.5V
0
2
4
6
-50 -25
0
25
50
75
100 125 150
Temperature T
j
(
°
C
)
Drain current I
D
(A)
Figure 5. R
DS(ON)
vs. I
D
Figure 6. Normalized R
DS(on)
vs. Temperature
3
1/5
-Channel
N
Enhancement Mosfet
TMN2012S
10000
1000
100
Ciss
Coss
Crss
10
F=1.0MHz
1
0
5
10
15
20
Drain-
source voltage V
DS
（
V
）
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
4/5
Package Mechanical Data:SOP-8L
5/5
