Tritech-MOS-TMN3006MI
| Part # | Tritech-MOS-TMN3006MI |
Download  | Tritech-MOS-TMN3006MI |
-Channel
N
Enhancement Mosfet
TMN3006MI
General Description
General Features
V
DS
= 30V
I
D
=
6.0
A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
R
DS(ON
)
= 24
(typ.)@
mΩ
V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
MI:SOT-23-3L
D
S
G
Marking: XO
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
30
Parameter
Symbol
Units
V
Drain-Source Voltage
V
DS
±
12
Gate-Sou
r
ce Voltage
V
GS
V
Continuous Drain Current
I
D
@T
A
=25
℃
6.0
A
4.9
Continuous Drain Current
I
D
@T
A
=70
℃
A
Pulsed Drain Current
2
20
1
I
DM
A
T
o
tal Power Dissipation
3
P
D
@T
A
=25
℃
W
-55 to 150
-55 to 150
125
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
T
STG
T
J
℃
℃
R
θ
JA
R
θ
JA
℃
/W
℃
/W
85
1/5
-Channel
N
TMN3006MI
Enhancement Mosfet
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=5A
Min.
30
—
—
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS
T
e
mperature Coefficient
△
BV
DSS
/
△
T
J
0.029
24
—
V/
℃
26
29
49
1.2
—
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=3A
27
mΩ
V
GS
=2.5V , I
D
=1A
30
V
GS(th)
Gate Threshold Voltage
0.9
-2.82
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=±12V , V
DS
=0V
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
R
g
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±100
—
nA
S
V
DS
=5V , I
D
=5A
25
V
DS
=0V , V
GS
=0V , f=1MHz
1.5
11.5
1.6
2.9
5
—
Ω
Q
g
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
Q
gs
Q
gd
T
d(on)
T
r
V
DS
=15V , V
GS
=4.5V , I
D
=5.8A
—
nC
ns
—
Turn-On Delay Time
Rise Time
—
47.
26
—
V
DD
=15V , V
GS
=10V , R
G
=3Ω
I
D
=5A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
8
—
C
iss
C
oss
C
rss
I
S
Input Capacitance
530
130
36
—
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,4
Diode Forward Voltage
2
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
—
V
G
=V
D
=0V , Force Current
—
A
V
6.0
1.2
V
SD
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
Note :
1
、
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The power dissipation is limited by 150
℃
junction temperature
4
、
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/5
-Channel
N
Enhancement Mosfet
TMN3006MI
Typical Characteristics
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction
T
e
mperature (
℃
)
T
J
, Junction
T
e
mperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3/5
-Channel
N
Enhancement Mosfet
TMN3006MI
4/5
:
Package Mechanical Data SOT-23-3
L
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
Max.
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
c
D
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
E1
E
e
0.950(BSC)
0.037(BSC)
e1
L
θ
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
5/5
