Tritech-MOS-TMN30100AD
| Part # | Tritech-MOS-TMN30100AD |
Download  | Tritech-MOS-TMN30100AD |
-Channel
N
TMN30100AD
Enhancement Mosfet
General Description
General Features
V
DS
= 30V
I =100
• Low R
DS(ON)
A
D
• RoHS and Halogen-Free Compliant
=10V
R
DS(ON)
=4.5
m
Ω
（
typ) @V
GS
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
D
S
G
Marking: 100N03
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
V
DSS
Parameter
Max.
30
Units
V
Drain-Source Voltage
Gate-Source Voltage
V
GSS
±20
V
T
C
= 25
℃
100
A
I
D
Continuous Drain Current
Pulsed Drain Current
note1
T
C
= 100
℃
46
A
I
DM
E
AS
280
A
Single Pulsed Avalanche Energy
note2
56
mJ
W
P
D
Power Dissipation
T
C
= 25
℃
42
Thermal Resistance, Junction to Case
Operating and Storage
T
e
mperature Range
R
θJC
T , T
STG
2.98
-55 to +150
℃
/W
℃
1/6
-Channel
N
TMN30100AD
Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V,I
D
=250μA
V
DS
=30V, V
GS
= 0V,
V
DS
=0V,V
GS
= ±20V
30
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
=250μA
1.0
–
1.5
4.5
6.5
2.5
6.4
9.4
V
V
GS
=10V, I
D
=30A
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
V
GS
=4.5V, I
D
=20A
–
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1614
245
215
33.7
8.5
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=15V, V
GS
=0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
=15V, I
D
=30A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
7.5
Switching Characteristics
t
d(on)
Turn-on Delay Time
t
r
t
d(off)
t
f
–
–
–
–
7.5
14.5
35.2
9.6
–
–
–
–
ns
ns
ns
ns
V
DS
=15V,
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
I
D
=30A, R
GEN
=3Ω,
V
GS
=10V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
100
280
1.2
A
A
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
= 0V, I
S
=30A
Voltage
V
SD
V
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. EAS condition: T
J
=25
℃
,VDD=15V,VG=10V, RG=25
Ω
, L=0.5mH, IAS=15A
3. Pulse
T
est: Pulse Width≤300μs, Duty Cycle≤0.5%
2/6
-Channel
N
TMN30100AD
Enhancement Mosfet
Typical Operating Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
I
D
(A)
100
100
80
7V
10V
80
60
5V
3.5V
60
125
℃
40
20
0
40
20
0
3V
25
℃
V
GS
=2.5V
4
V
GS
(V)
3.0
V
DS
(V)
0
1
2
3
5
0
1.0
2.0
4.0
5.0
6.0
1.8
30
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
I
S
(A)
R
DS(ON)
(mΩ)
10
3
10
2
10
1
10
0
12.0
10.0
8.0
V
GS
=4.5V
T
J
=125
℃
6.0
T
J
=25
℃
4.0
2.0
V
GS
=10V
I
D
(A)
V
GS
=0V
1.6
V
SD
(V)
1.0
0
0
0.2
0.4
0.6
0.8
1.2
1.4
10
20
30
40
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
2100
1800
1500
10
8
V
DS
=15V
I
D
=30A
C
iss
6
4
1200
900
C
oss
600
2
0
300
0
C
rss
V
DS
(V)
Q
g
(nC)
0
8
16
24
32
40
0
6
12
18
24
3/6
-Channel
N
TMN30100AD
Enhancement Mosfet
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8:
Normalized on Resistance vs.
Junction Temperature
V
BR(DSS)
(V)
1.3
R
DS
(on)(mΩ)
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
I
D
(A
)
I
D
(A
)
90
Limited by R
DS(on)
1000
100
10
75
60
45
30
10μs
100μs
1ms
10ms
T
C
=25
℃
100ms
1
Single pulse
15
0
DC
Tc (
℃
)
75 100
V
DS
(V)
0.1
0.1
1
10
100
0
25
50
125
150
175
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
Single pulse
10
-2
10
-3
Notes:
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-2
10
-6
10
-5
10
-4
10
-3
10
-1
10
0
10
1
4/6
-Channel
N
TMN30100AD
Enhancement Mosfet
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
5/6
5
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
6/6
