Tritech-MOS-TMN30100D
| Part # | Tritech-MOS-TMN30100D |
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TMN30100D
-Channel
N
Enhancement Mosfet
General Description
General Features
V
DS
= 30V
I
D
=100
A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
R
DS(ON)
=3.5m
Ω
（
typ) @
V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3
D
D
D
S
G
Marking: 100N03
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Parameter
Rating
Symbol
Unit
V
Common Ratings
V
DSS
V
GSS
Drain-Source Voltage
30
±20
Gate-Source Voltage
100
Tc=25°C
Tc=100°C
Tc=25°C
T
A
=25°C
T
C
=25°C
I
D
Continuous Drain Current
39
A
I
DM
P
D
Pulsed Drain Current
Power Dissipation
160
3.6
W
W
°C
P
D
Power Dissipation
52
T
STG
, T
j
Storage Temperature Range
-55 to 150
18
T
A
=25°C
T
A
=70°C
I
D
Continuous Drain Current
A
14
Note: Absolute maximum ratings are those values beyond which the device could be permanently
Absolute maximum ratings are stress rating only and functional device operation is not
implied
1/6
TMN30100D
-Channel
N
Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Test Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Static Characteristics
V
GS
=0V, I
DS
=250
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
30
–
–
V
V
DS
=24V, V
GS
=0V
–
–
–
–
–
–
1
30
A
Tj=85°C
V
DS
=V
GS
, I
DS
=250
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
V
GS
=4.5V, I
DS
=15A
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
1
–
2.5
±100
5.5
6.8
V
nA
–
3.5
5.5
R
DS(ON)
Drain-Source On-state Resistance
m
–
Body Diode Characteristics
V
SD
Dynamic Characteristics
e
I
SD
=40A, V
GS
=0V
Diode Forward Voltage
–
0.7
1.3
V
C
iss
C
oss
C
r
ss
t
d(ON)
t
r
Input Capacitance
–
–
–
–
–
–
–
1356
55
45
8
–
–
–
–
–
–
–
V
GS
=0V, V
DS
=10V,
Frequency=1.0MHz
pF
nS
Output Capacitance
Reverse transfer capacitance
Turn-on delay Time
Turn-on rise Time
9
V
GS
=10V ,V
DS
=15V
R
G
=1.8Ω, I
D
=20A
，
R
L
=30Ω
t
d(OFF)
t
f
Turn-off delay Time
Turn-off rise Time
32
6
Gate Charge Characteristics
e
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
23
5
–
–
–
V
DS
=15V, V
GS
=10V, I
DS
=20A
3
Note: 1. Pulse test: pulse width<=300uS, duty cycle<=2%
2.Static parameters are based on package level with
recommended wire bonding
2/6
TMN30100D
-Channel
N
Enhancement Mosfet
Typical Performance Characteristics
100
100
80
60
40
20
0
10V
4.5V
6V
V
DS
=5V
80
60
40
20
0
8V
4V
3.5V
125
°
C
25
°
C
V
GS
=3V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
10
8
1.6
1.4
1.2
1
V
GS
=10V
I
D
=20A
V
GS
=4.5V
V
GS
=10V
6
4
V
GS
=4.5V
I
D
=20A
2
0
0.8
0
5
10
15
I
D
(A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
12
9
1.0E+02
I
D
=20A
1.0E+01
1.0E+00
125
°
C
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
6
25
°
C
3
25
°
C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
3/6
TMN30100D
-Channel
N
Enhancement Mosfet
10
1800
1600
1400
1200
1000
800
V
DS
=15V
I
D
=20A
C
iss
8
6
4
2
0
C
oss
600
400
C
rss
200
0
0
5
10
15
20
0
5
10
15
20
25
30
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
300
250
200
150
100
50
1000.0
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
C
=25
°
C
10
µ
s
R
DS(ON)
100
µ
s
1ms
DC
10ms
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=T
/T
T
=T
+P
.Z
.R
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
R
=3
°
C/W
0.1
0.01
Single Pulse
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/6
TMN30100D
-Channel
N
Enhancement Mosfet
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
Ω
t
AV
Switching Time Test Circuit and Waveforms
V
DS
R
D
DUT
V
DS
90%
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
5/6
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
6/6
