Tritech-MOS-TMN30120D
| Part # | Tritech-MOS-TMN30120D |
Download  | Tritech-MOS-TMN30120D |
-Channel
N
TMN30120D
Enhancement Mosfet
General Description
General Features
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
V
DS
=30V I
D
=120
A
R
DS(ON)
=
3.0
m
W
(
Typ
.) @ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
S
G
Marking: 120N03
Absolute Maximum Ratings (T
=25
℃
unless otherwise noted)
Rating
Steady State
Parameter
Units
Symbol
V
DS
10s
Drain-Source Voltage
Gate-Sou
r
ce Voltage
30
±
20
120
75
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
A
384
198
53.8
62.5
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
mJ
A
I
AS
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
W
W
℃
℃
Total Power Dissipation
4
6
2.42
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
T
J
Thermal Data
Symbol
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
62
25
R
θJA
R
θJA
R
θJC
—
—
2.4
1/7
-Channel
N
TMN30120D
Enhancement Mosfet
Electrical Characteristics (T =25
, unless otherwise noted)
℃
J
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V =0
V
,
I
=
250
A
30
–
–
–
1
V
m
GS
DS
V
DS
=24V, V
GS
=0V
T
J
=85°C
V =V ,
I =250
A
–
I
DSS
Zero Gate Voltage Drain Current
A
m
–
–
30
2.5
±100
3.
8
–
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
1.4
1.7
–
V
m
DS
GS DS
V
GS
=±20
V
,
V
DS
=0V
V
GS
=10
V
,
I
DS
=20A
–
–
–
–
–
nA
3
d
R
DS(ON)
Drain-Source On-state Resistance
T
J
=125°C
4.4
4.0
24.6
m
W
V
GS
=4.5
V
,
I
DS
=15A
V
DS
=5
V
, I
DS
=10A
5.5
–
Gfs
Forward Transconductance
S
Diode Characteristics
d
V
SD
t
rr
Diode Forward Voltage
I
SD
=20A, V
GS
=0V
–
–
–
–
–
0.8
35.6
19.3
16.3
26
1.1
V
ns
nC
W
Reverse Recovery Time
Charge Time
–
–
–
–
t
a
I =20A,
dl /dt=100A/
s
m
DS
SD
t
b
Discharge Time
Q
rr
Reverse Recovery Charge
Dynamic Characteristics
e
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
V
GS
=0
V
,
V
DS
=0
V
,
F=1MHz
–
–
–
–
–
–
–
–
1
2
Input Capacitance
2485
2971
V
GS
=0
V
,
V
DS
=15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
850
85
–
pF
–
12.4
9.5
23
18
49
64
V =15V,
R =15
,
W
DD
L
I
DS
=1A, V
GEN
=10V,
R =6
ns
t
d(OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
e
27.2
35.2
W
G
V
DS
=15V, V
GS
=10
V
,
I
DS
=20A
Q
g
T
o
tal Gate Charge
–
20.6
28.8
Q
g
Q
gth
Q
gs
Q
gd
T
o
tal Gate Charge
–
–
–
–
9.8
1.8
3.8
3.7
–
–
–
–
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=4.5
V
,
I
DS
=20A
Note d
Pulse test ; pulse width
≤
300 s,
duty cycle
≤
2%.
：
m
Note e
Guaranteed by design, not subject to production testing.
：
2/7
-Channel
N
TMN30120D
Enhancement Mosfet
Typical Operating Characteristics
Power Dissipation
Drain Current
60
105
90
75
60
45
30
15
0
50
40
30
20
10
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
20 40 60
80
100 120 140 160
0
0
20 40 60
80
100 120 140 160
T
j
– Junction Temperature (°C)
T
j
– Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
3
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.01
1E-3
1E-4
0.02
0.01
Single Pulse
R
q
JC
:2.2
o
C/W
1E-6 1E-5 1E-4 1E-3
0.01
0.1
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
3/7
-Channel
N
TMN30120D
Enhancement Mosfet
Safe Operation Area
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.01
1E-3
0.02
0.01
Single Pulse
Mounted on 1in
2
pad
R
q
JA
:64
o
C/W
1E-4 1E-3 0.01
0.1
1
10 100
1000
V
DS
– Drain – Source Voltage (V)
Output Characteristics
Square Wave Pulse Duration (sec)
Drain-Source On Resistance
250
200
150
100
50
8
7
6
V
G
S
=6,7,8,9,10V
5V
4.5V
4V
V
G
S
=4.5V
5
4
V
G
S
=10V
3
3.5V
2
1
0
3V
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
30
60
90
120
150
V
DS
– Drain – Source Voltage (V)
I
D
– Drain Current (A)
4/7
-Channel
N
TMN30120D
Enhancement Mosfet
Gate-Source On Resistance
Gate Threshold Voltage
21
18
15
12
9
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=20A
I
DS
=250
m
A
6
3
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
Drain-Source On Resistance
T
j
– Junction Temperature (°C)
Source-Drain Diode Forward
2.5
2.0
1.5
1.0
0.5
0.0
200
100
V
G
S
= 10V
I
DS
= 20A
T
=
150
o
C
j
10
1
T
=
25
o
C
j
R
O
N
@
T
=25
o
C: 2.8m
W
j
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6
0.8
1.0 1.2 1.4
T
j
– Junction Temperature (°C)
V
SD
– Source – Drain Voltage (V)
5
5/7
100
-Channel
N
TMN30120D
Enhancement Mosfet
Capacitance
Gate Charge
3000
2700
2400
2100
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
V
DS
=15V
I
DS
=20A
Ciss
1500
1200
900
600
300
0
Coss
Crss
5
0
10
15
20
25
30
0
3
6
9
12 15
18
21
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
6/7
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
7/7
