Tritech-MOS-TMN30150NF
| Part # | Tritech-MOS-TMN30150NF |
Download  | Tritech-MOS-TMN30150NF |
-Channel
N
Enhancement Mosfet
TMN30150NF
General Description
General Features
V
DS
= 30V
I
D
= 150A
R
DS(ON)
=
1.8mΩ@ V
GS
=10V
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
Applications
100% UIS Tested
100% R
g
Tested
• Load switch
• PWM
NF:DFN5x6-8L
Marking: 150N03 OR 30150
Absolute Maximum Ratings
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
V
DSS
V
GSS
T
J
Drain-Source Voltage
Gate-Source Voltage
30
±
20
150
-55 to 150
42.5
150
75
V
Maximum Junction
T
e
mperature
Storage Temperature Range
°
C
T
STG
I
S
Diode Continuous Forward Current
T
C
=25
°
C
T
C
=25
°
C
T
C
=100
°
C
T
C
=25
°
C
T
C
=25
°
C
T
C
=100
°
C
Steady State
T
A
=25
°
C
T
A
=70
°
C
T
A
=25
°
C
T
A
=70
°
C
t
≤
10s
a
I
D
Continuous Drain Current
Pulsed Drain Current
A
b
I
DM
160
78
P
D
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
W
°
C/W
A
31
1.6
R
θ
JC
28
c
I
D
22
2.3
c
P
D
Maximum Power Dissipation
W
1.5
20
c
Thermal Resistance-Junction to Ambient
°
C/W
R
θ
JA
Steady State
L=0.1mH
L=0.1mH
55
d
I
AS
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
86
A
d
E
AS
372
mJ
Note a,*
：
Max. continue current is limited by bonding wire.
Note b
：
Pulse width is limited by max. junction temperature.
Note c
：
R
θ
JA
steady state t=999s.
Note d
：
UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=
2
5
o
C).
1/7
-Channel
N
Enhancement Mosfet
TMN30150NF
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
30
34
–
–
–
–
V
V
V
GS
=0V, I
DS
=250
µ
A
Drain-Source Breakdown Voltage
VGS=0V, I
D(aval)
=40A
T
c
a
se
=25
°
C, t
t
r
ansient
=100ns
BV
DSSt
(transient)
V
DS
=24V, V
GS
=0V
T
J
=85
°
C
–
–
1
30
2.3
±
100
2
.
3
–
I
DSS
Zero Gate Voltage Drain Current
µ
A
–
–
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
1.3
1.6
–
V
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=
±
20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
T
J
=125
°
C
–
–
–
–
–
nA
1.
8
2.2
2.2
32
e
R
DS(ON)
Drain-Source On-state Resistance
m
Ω
S
V
GS
=4.5V, I
DS
=12A
V
DS
=5V, I
DS
=15A
3
Gfs
Forward Transconductance
–
Diode Characteristics
e
V
SD
t
rr
Diode Forward Voltage
I
SD
=20A, V
GS
=0V
–
–
–
–
–
0.8
50
1.1
V
Reverse Recovery Time
Charge Time
–
–
–
–
t
a
23.5
27.5
45
ns
nC
Ω
I
SD
=20A, dl
SD
/dt=100A/
µ
s
t
b
Discharge Time
Q
rr
Reverse Recovery Charge
Dynamic Characteristics
R
G
C
i
s
s
C
o
s
s
C
rss
t
d(ON)
t
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
0.9
2780
590
130
15.5
11
2
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
pF
–
–
–
–
V
DD
=15V, R
L
=15
Ω
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
Ω
ns
t
d
(
OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
35
40
V
DS
=15V, V
GS
=10V,
I
DS
=20A
Q
g
Total Gate Charge
–
44.5
57.8
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
–
–
–
–
21.2
2.9
–
–
–
–
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=4.5V,
I
DS
=20A
4.3
8.3
Note e
：
Pulse test ; pulse width
≤
300
µ
s, duty cycle
≤
2%.
2/7
-Channel
N
Enhancement Mosfet
TMN30150NF
Typical Operating Characteristics
Power Dissipation
Drain Current
90
75
60
45
30
15
T
C
=25
o
C
0
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
e
mperature (
°
C)
Thermal Transient Impedance
Safe Operation Area
3
1
300
100
Duty = 0.5
0.2
0.1
100
µ
s
300
µ
s
1ms
0.05
0.1
0.01
1E-3
1E-4
0.02
10
1
0.01
Single Pulse
DC
T
C
=25
o
C
R
θ
JC
:1.6
o
C/W
0.1
0.01
1E-6
1E-5
1E-4
1E-3
0.01 0.1
0.1
1
10
100
Square Wave Puls
e
D
uration (sec)
V
DS
– Drain – Source Voltage (V)
3/7
-Channel
N
Enhancement Mosfet
TMN30150NF
Typical Operating Characteristics (Cont.)
Capacitance
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
4500
4000
3500
3000
2500
2000
1500
1000
500
Frequency=1MHz
V
DS
=15V
I
DS
=20A
Ciss
Coss
Crss
5
0
0
9
18
27
36
45
0
10
15
20
25
30
V
DS
–
D
rain-Source Voltage (V)
Q
G
–
G
ate Charge (nC)
Output Characteristics
Drain-Source On Resistance
160
140
120
100
80
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=3.5,4,5,6,7,8,9,10V
V
GS
=4.5V
V
GS
=10V
3V
60
40
20
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100 125 150
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
4/7
-Channel
N
Enhancement Mosfet
TMN30150NF
Typical Operating Characteristics (Cont.)
Gate-Source On Resistance
Gate Threshold Voltage
7
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=20A
I
DS
=250
µ
A
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Source-Drain Diode Forward
Drain-Source On Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100
10
1
V
GS
= 10V
I
DS
= 20A
T
j
=150
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 1.5m
Ω
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
5/7
-Channel
N
Enhancement Mosfet
TMN30150NF
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
Ω
t
AV
Switching Time Test Circuit and Waveforms
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
6/7
:
Package Mechanical Data DFN5x6-8L
Common
Symbol
mm
Inch
Mim
1.03
0.34
0.824
4.80
4.11
4.80
5.95
5.65
1.60
Max
1.17
0.48
0.0970
5.40
4.31
5.00
6.15
5.85
/
Min
Max
0.0461
0.0189
0.082
0.2126
0.1697
0.1969
0.2421
0.2303
/
A
b
c
0.0406
0.0134
0.0324
0.1890
0.1618
0.1890
0.2343
0.2224
0.0630
D
D1
D2
E
E1
E2
e
1.27 BSC
0.05 BSC
L
0.05
0.38
0.38
3.30
/
0.25
0.50
0.50
3.50
0.18
0.0020
0.0150
0.0150
0.1299
/
0.0098
0.0197
0.0197
0.1378
0.0070
L1
L2
H
I
7/7
