Tritech-MOS-TMN3030ADF
| Part # | Tritech-MOS-TMN3030ADF |
Download  | Tritech-MOS-TMN3030ADF |
-Channel
N
Enhancement Mosfet
TMN3030ADF
General Description
General Features
• Low R
DS(ON)
V
DS
= 30V
I
D
=30A
• RoHS and Halogen-Free Compliant
(
typ
.
)
R
DS(ON)
= 8 mΩ
@ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
DF:DFN3x3_8L
Marking: 30N03D
(T
A
= 25
°
C Unless Otherwise Noted)
Absolute Maximum Ratings
S
y
mbol
V
DS
Parameter
Ratin
g
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
30
±
20
30
V
V
GS
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
20
A
90
A
I
DM
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
39
mJ
A
I
AS
30
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
15
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-ambient
1
—
85
R
θJA
℃
/W
1/6
-Channel
N
Enhancement Mosfet
TMN3030ADF
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=7A
0.034
8.0
—
V/
℃
12
18
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
11
V
GS
=4.5V , I
D
=4A
V
GS(th)
Gate Threshold Voltage
1.5
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
-3.84
—
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
R
g
Gate-Source Leakage Current
Gate Resistance
—
±
100
2.1
—
nA
V
DS
=0V , V
GS
=0V , f=1MHz
1.04
8.4
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=15V , V
GS
=4.5V , I
D
=7A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
3.1
—
2.8
—
2.4
—
V
DD
=15V , V
GS
=10V , R
G
=3.3
72.0
36.0
14.4
816
107.8
82.6
—
I
D
=7A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
—
pF
V
DS
=15V , V
GS
=0V , f=1MHz
—
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Conditions
Min.
—
Typ.
—
Max.
30
Unit
A
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
30
A
—
—
1.2
V
V
GS
=0V , I
S
=1A , T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating . The test condition i
s
V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=20A
4.
The power dissipation is limited by 150
℃
junctio
n
t
emperature
5.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
-Channel
N
Enhancement Mosfet
TMN3030ADF
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
I
D
(A)
100
100
80
10V
8V
80
3.5V
4.5V
60
60
40
40
3V
125
℃
25
℃
20
0
20
0
V
GS
=2.5V
V
DS
(V)
V
GS
(V)
3
0
2.0
4.0
6.0
8.0
10.0
0
1
2
4
5
6
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
R
DS(ON)
(mΩ)
I
S
(A)
16
14
12
10
1000
100
V
GS
=4.5V
150
℃
25
℃
10
1
V
GS
=2.5V
25
8
6
V
SD
(V)
I
D
(A)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
5
10
15
20
30
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
8
V
DS
=15V
10000
1000
100
I
D
=10A
C
iss
6
C
oss
rss
4
C
2
0
V
DS
(V)
15
Q
g
(nC)
10
0
5
10
20
25
30
0
4
8
10
15
20
-Channel
N
Enhancement Mosfet
TMN3030ADF
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
2.0
1.3
1.2
1.1
1.0
1.5
1.0
0.5
0.9
0.8
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
I
D
(A
)
I
D
(A
)
10
3
15
12
Limited by R
DS(on)
10
2
10
1
1
μ
9
6
s
1
0
0
μ
1
s
10
0
10ms
3
0
T
A
=25
℃
0
s
1
Single pulse
10
-1
0.1
T
A
(
℃
)
DC
V
DS
(V)
1
10
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-1
10
-2
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
-1
J
=P
DM
*Z
thJA
+T
0
A
T
P
(s)
-2
-6
-5
-4
-3
1
10
10
10
10
10
10
10
10
-Channel
N
Enhancement Mosfet
TMN3030ADF
Test Circuit
4
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
_
Package Mechanical Dat
a
:
DFN3x3
8L
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
