Tritech-MOS-TMN3030LD
| Part # | Tritech-MOS-TMN3030LD |
Download  | Tritech-MOS-TMN3030LD |
-Channel
N
TMN3030LD
Enhancement Mosfet
General Description
General Features
V
DS
=30V I
D
• Low R
DS(ON)
=30
A
• RoHS and Halogen-Free Compliant
R
DS(ON)
=
15
m
W
(
Typ
.) @ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
S
G
Marking: 30NL03
Absolute Maximum Ratings
：
(T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Ratings
Units
Drain-Source Voltage
Gate-Source Voltage
30
V
V
V
GS
±
12
Continuous Drain Current-T
C
=25
℃
Continuous Drain Current-T
C
=100
℃
Single Pulse Avalanche Energy
1
Pulsed Drain Current
2
30
I
D
A
16
E
AS
I
DM
20
90
mJ
A
P
D
30
W
℃
Power Dissipation,
T
C
=25
℃
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics
：
Symbol
R
Ɵ
JC
Parameter
Max
Units
Thermal Resistance,Junction to Case
Thermal Resistance Junction to mbient
4
–
℃
/W
R
Ɵ
JA
1/5
-Channel
N
TMN3030LD
Enhancement Mosfet
Electrical Characteristics
：
(T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
V
GS
=0V,I
D
=250
μ
A
V
GS
=0V, V
DS
=30V
V
GS
=
±
12V, V
DS
=0A
30
—
—
—
—
—
—
1
V
BV
DSS
μ
A
nA
I
DSS
I
GSS
±
100
On Characteristics
V
GS(th)
GATE-Source Threshold Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Drain-Source On Resistance
V
GS
=V
DS
, I
D
=250
μ
A
V
GS
=10V,I
D
=10A
V
GS
=4.5V,I
D
=8A
V
GS
=2.5V,I
D
=6A
0.5
—
—
—
0.9
15
21
25
1
V
22
25
35
m
Ω
m
Ω
m
Ω
R
DS(ON)
Dynamic Characteristics
Input Capacitance
—
—
—
550
65
—
—
—
C
iss
C
oss
C
rss
Output Capacitance
V
DS
=15V, V
GS
=0V, f=1MHz
pF
Reverse Transfer Capacitance
55
Switching Characteristics
Turn-On Delay Time
—
—
—
—
—
—
—
17
48
—
—
—
—
—
—
—
ns
ns
ns
ns
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
Rise Time
V
GS
=4.5V ,V
DD
=15V, I
D
=2A
R
GEN
=3.3
Ω
Turn-Off Delay Time
Fall Time
20
13
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain
“
Miller
”
Charge
5.5
1.2
1.8
Q
g
V
GS
=4.5V, V
DS
=15V,
I
D
=4A
Q
gs
Q
gd
Drain-Source Diode Characteristics
Source-Drain Diode Forward Voltage
I
D
=30A
—
—
—
—
9.1
2
1.2
—
V
V
SD
trr
Reverse Recovery Time
ns
nC
I F =10A,T J =25
℃
diF/dt=100A/μs
Reverse Recovery Charge
—
Qrr
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =12.7A
Notes:
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
2/5
-Channel
N
TMN3030LD
Enhancement Mosfet
Typical Characteristics
：
(T
C
=25
℃
unless otherwise noted)
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
I
D
(A)
25
20
25
20
4.5V
10V
3V
2.5V
15
15
125
℃
25
℃
10
5
10
5
2V
V
GS
(V)
V
DS
(V)
0
0
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
Figure 4
: Body Diode Characteristics
I
S
(A)
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
10
3
10
2
10
1
10
0
60
50
40
30
T
J
=125
℃
V
GS
=2.5V
V
GS
=4.5V
T
J
=25
℃
20
10
V
GS
=10V
V
GS
=0V
1.6
I
D
(A)
V
SD
(V)
1.0
0
0.2
0.4
0.6
0.8
1.2
1.4
1.8
0
1
2
3
4
5
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
4
5
V
DS
=15V
I
D
=4A
4
3
2
C
iss
10
3
C
oss
10
2
1
0
1
1
0
C
rss
V
DS
(V)
Q
g
(nC)
0
1
2
3
4
5
0
5
10
15
20
25
3/5
-Channel
N
TMN3030LD
Enhancement Mosfet
Figure 8:
Safe Operating Area
Figure 7:
Normalized on Resistance vs.
Junction Temperature
100.00
10.00
1.00
R
DS
(on)
2.5
100us
1ms
2.0
1.5
1.0
10ms
100ms
DC
0.10
Tc=25
o
C
Single Pulse
Tj (
℃
)
0.5
-100
0.01
-50
0
50
100
150
200
0.1
1
10
100
1000
V
DS
(V)
Figure 9:
Normalized Maximum Transient Thermal Impedance
1
DUTY=0.5
0.2
0.1
0.1
0.05
P
DM
T
ON
0.02
0.01
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
4/5
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
5/5
