Tritech-MOS-TMN3080D

-Channel  

N

Enhancement Mosfet  

TMN3080D  

General Features  

V

DS

= 30V

 

I

D

= 80A  

DS(ON)  

General Description  

• Low R  

DS(ON)  

• RoHS and Halogen-Free Compliant  

R

=

5.0

m

Ω

(

typ

.)

@

V

GS

=

1

0

V  

Applications  

100% UIS Tested  

100% R

g

Tested  

• Load switch  

• PWM  

D:TO-252-3L  

D

D

S

G

Marking: 80N03  

Absolute Maximum Ratings (TC=25

℃

unless otherwise noted)  

Rating  

Steady State  

30  

Parameter  

Units  

Symbol  

10s  

V

DS  

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

V

V

V

GS  

I

D

@T

C

=25

℃

 

I

D

@T

C

=100

℃  

I

DM  

±

20  

80  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Pulsed Drain Current

2  

A

50  

A

192  

A

EAS  

Single Pulse Avalanche Energy

3  

Avalanche Current  

306  

mJ  

I

AS  

53.8  

P

D

@T

C

=25

℃  

T

STG  

Total Power Dissipation

4  

82.5  

W

℃

℃

Storage Temperature Range  

Operating Junction Temperature Range  

-55 to 175  

-55 to 175  

T

J  

Thermal Data  

Symbol  

R

θJC  

Parameter  

Typ.  

—  

Max.  

0.56  

1.8  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-Case

1  

Thermal Resistance,Junction-to-Case

(Note 2)  

—  

R

θJC  

1/6  

-Channel  

N

Enhancement Mosfet  

TMN3080D  

Electrical Characteristics (T

C

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250μA  

V

DS

=30V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

30  

–

–

–

–

–

1

V

μA  

nA  

I

GSS  

–

±100  

Gate Threshold Voltage  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250μA  

V

GS

=10V, I

D

=30A  

V

GS

=5V, I

D

=24A  

V

DS

=5V,I

D

=24A  

1

–

1.5  

5.0  

7.0  

–

3

6.9  

10  

–

V

mΩ  

S

Drain-Source On-State Resistance  

–

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

20  

C

lss  

C

oss  

C

rss  

–

–

–

2016  

251  

–

–

–

PF  

PF  

PF  

V

DS

=15V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

230  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

20  

15  

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=10V,I

D

=30A  

V

GS

=10V,R

GEN

=2.7Ω  

Turn-Off Delay Time  

60  

Turn-Off Fall Time  

10  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

60.5  

8.1  

7.8  

V

DS

=10V,I

D

=30A,  

V

GS

=10V  

Gate-Source Charge  

Gate-Drain Charge  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

Diode Forward Current

(Note 2)  

Reverse Recovery Time  

Reverse Recovery Charge  

Forward Turn-On Time  

V

SD  

I

S  

V

GS

=0V,I

S

=24A  

–

–

–

–

–

1.2  

80  

50  

20  

V

A

–

t

rr  

TJ = 25°C, IF = 80A  

di/dt = 100A/μs

(Note3)  

32  

12  

nS  

nC  

Qrr  

t

on  

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.  

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  

4.

Guaranteed by design, not subject to production  

5.

EAS condition

：

Tj=25

℃

,V

DD

=15V,V

G

=10V,L=0.5mH,Rg=25Ω

，

I

AS

=35A  

2/6  

-Channel  

N

Enhancement Mosfet  

TMN3080D  

Typical Performance Characteristics  

Vds Drain-Source Voltage (V)  

T

J

-Junction Temperature(

℃

)  

Figure 1 Output Characteristics  

Figure 4 Rdson-JunctionTemperature  

Vgs Gate-Source Voltage (V)  

Qg Gate Charge (nC)  

Figure 2 Transfer Characteristics  

Figure 5 Gate Charge  

I

D

– Drain Current (A)  

Vsd Source-Drain Voltage (V)  

Figure 3 Rdson-

Drain Current  

Figure 6 Source- Drain Diode Forward  

3/6  

3

-Channel  

N

Enhancement Mosfet  

TMN3080D  

Vds Drain-Source Voltage (V)  

T

J

-Junction Temperature(

℃

)  

Figure 7 Capacitance vs Vds  

Figure 9 BV

DSS

vs Junction Temperature  

Vds Drain-Source Voltage (V)  

T

J

-Junction Temperature(

℃

)  

Figure 8 Safe Operation Area  

Figure 10 V

GS(th)

vs Junction Temperature  

Square Wave Pluse Duration(sec)  

Figure 11 Normalized Maximum Transient Thermal Impedance  

4

4/6  

-Channel  

N

Enhancement Mosfet  

TMN3080D  

Test Circuit  

Figure1:Gate Charge Test Circuit & Waveform  

Figure 2: Resistive Switching Test Circuit & Waveforms  

Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms  

5/6  

Package Information:TO-252-3L  

Dimensions In Millimeters  

Dimensions In Inches  

Min.  

Symbol  

Min.  

2.200  

0.000  

0.660  

0.460  

6.500  

5.100  

Max.  

2.400  

0.127  

0.860  

0.580  

6.700  

5.460  

Max.  

0.094  

0.005  

0.034  

0.023  

0.264  

0.215  

A

A1  

b

0.087  

0.000  

0.026  

0.018  

0.256  

0.201  

c

D

D1  

D2  

E

4.830 TY

P

.  

0.190 TY

P

.  

6.000  

2.186  

9.800  

6.200  

2.386  

0.236  

0.086  

0.386  

0.244  

0.094  

0.409  

e

L

10.400  

L1  

L2  

L3  

L4  

Φ

θ

2.900 TY

P

.  

1.600 TY

P

.  

0.114 TY

P

.  

0.063 TY

P

.  

1.400  

1.700  

0.055  

0.067  

0.600  

1.100  

0°  

1.000  

1.300  

8°  

0.024  

0.043  

0°  

0.039  

0.051  

8°  

h

0.000  

0.300  

0.000  

0.012  

V

5.350 TY

P

.  

0.211 TY

P

.  

6/6