Tritech-MOS-TMN4050D
| Part # | Tritech-MOS-TMN4050D |
Download  | Tritech-MOS-TMN4050D |
-Channel
N
TMN4050D
Enhancement Mosfet
General Features
General Description
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
V
DS
= 40V
I
D
=50 A
mΩ @ V
GS
=10V
R
DS(ON)
= 11
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D
D:TO-252-3L
D
G
S
D
G
S
Marking 50N04
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
Units
Drain-Source Voltage
40
±
20
50
V
V
V
GS
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
A
A
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
23
I
D
@T
C
=100
℃
I
DM
EAS
I
AS
85
A
Single Pulse Avalanche Energy
3
Avalanche Current
31.3
25
mJ
A
T
o
tal Power Dissipation
4
31.3
2
W
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
T
o
tal Power Dissipation
4
W
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
-55 to 150
-55 to 150
65
℃
℃
℃
/W
T
J
R
θ
JA
R
θ
JC
Thermal Resistance Junction-ambient (Steady
State)
1
Thermal Resistance Junction-Case
1
3
℃
/W
1/5
-Channel
N
TMN4050D
Enhancement Mosfet
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=15A
Min.
40
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS
T
e
mperature Coefficient
—
0.032
—
△
BV
DSS
/
△
T
J
V/
℃
—
11
18
18
20
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=4.5V , I
D
=10A
—
1.2
—
m
Ω
R
DS(ON)
V
GS(th)
V
1.5
-4.8
2.5
—
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
mV/
℃
—
—
1
V
DS
=32V , V
GS
=0V , T
J
=25
℃
—
—
—
—
5
V
DS
=32V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
uA
nA
±
100
gfs
R
g
Forward Transconductance
Gate Resistance
V
DS
=5V , I
D
=15A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
34
2.1
10
—
—
—
—
—
—
—
—
—
—
—
—
S
V
DS
=0V , V
GS
=0V , f=1MHz
Ω
Q
g
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
T
d(on)
T
r
2.55
4.8
2.8
12.8
21.2
6.4
1013
107
76
V
DS
=32V , V
GS
=4.5V , I
D
=15A
nC
ns
Turn-On Delay Time
Rise Time
V
DD
=20V , V
GS
=10V ,
R
G
=3.3
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
I
D
=15A
C
iss
C
oss
C
rss
I
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
DS
=15V , V
GS
=0V , f=1MHz
pF
—
A
A
50
85
V
G
=V
D
=0V , Force Current
I
SM
V
SD
t
rr
—
—
1.2
—
V
V
GS
=0V , I
S
=1A , T
J
=25
℃
10
nS
nC
I
F
=15A
,
dI/dt=100A/µs
,
Q
rr
3.1
—
T
J
=25
℃
Note :
1 .The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ coppe
r
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3 .The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=25A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power
dissipation.
2/5
-Channel
N
TMN4050D
Enhancement Mosfet
Typical Characteristics
12
8
7
6
5
4
I
D
=12A
V
GS
=10V
10
8
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
6
V
GS
=3V
4
2
0
0
0.1
0.2
0.3
0.4
0.5
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
8
12
I
D
= 1 2
10
8
6
6
4
T
J
=150
℃
T
J
=25
℃
4
2
2
0
0
0
15
30
45
60
0
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Q
G
, T
o t a l
G a t e
C h a
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3/5
-Channel
N
TMN4050D
Enhancement Mosfet
10000
1000.00
100.00
10.00
1.00
F=1.0MHz
Ciss
10us
100us
1000
100
10
Coss
Crss
10ms
100ms
DC
0.10
T =25
℃
C
Single Pulse
0.01
0.1
1
10
100
1
5
9
13
17
21
25
V
DS
, Drain to Source Voltage(V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
P
DM
T
ON
T
0.01
D = T
ON
/T
S
I
NGLE PULSE
T
J
peak = T
C
+ P
DM
x R
θJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Wave
4/5
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
5/5
