Tritech-MOS-TMN6005MI

-Channel  

N

Enhancement Mosfet  

TMN6005MI  

General Description  

General Features  

V

DS

=60V I

D

=5.0A  

• Low R

DS(ON)  

• RoHS and Halogen-Free Compliant  

(

Typ

.)  

R

DS(ON)

=

4

0

m

Ω  

@ V

GS

=10V  

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

MI:SOT-23-3L  

D

S

G

Marking:6005  

Absolute Maximum Ratings

(T

C

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Drain-Source Voltage  

Max.  

Units  

V

DSS  

V

GSS  

60  

±20  

5.0  

3.8  

30  

V

V

Gate-Source Voltage  

T

C

= 25

℃

 

A

I

D  

Continuous Drain Current  

Pulsed Drain Current

note1  

T

C

= 100

℃  

A

I

DM  

EAS  

P

D  

A

Single Pulsed Avalanche Energy

note2  

mJ  

W

Power Dissipation  

T

C

= 25

℃  

3

Thermal Resistance, Junction to Case  

3

R

θJC  

7

℃

/W  

℃

T

J

, T

STG

Operating and Storage

T

e

mperature Range  

-55 to +175  

1/5  

-Channel  

N

Enhancement Mosfet  

TMN6005MI  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max. Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

=250μA  

V

DS

=60V, V

GS

=0V,  

V

DS

=0V, V

GS

=±20V  

60  

–

–

–

–

–

V

1.0  

μA  

nA  

I

GSS  

–

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=15A  

V

GS

=4.5V, I

D

=10A  

1

–

1.6  

40  

45  

2.5  

49  

63  

V

Static Drain-Source on-Resistance  

R

DS(on)  

mΩ  

note3  

–

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

825  

49  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

=25V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

41  

14  

V

DS

=30V, I

D

=4.5A,  

V

GS

=10V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

2.9  

5.2  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

5

–

–

–

–

ns  

ns  

ns  

ns  

V

DS

=30V,I

D

=2A,  

R

L

=6.7Ω,R

G

=3Ω,  

V

GS

=10V  

2.6  

16.1  

2.3  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

–

–

5

30  

1.2  

–

A

A

Current  

I

SM  

V

SD  

trr  

Maximum Pulsed Drain to Source Diode Forward Current  

Drain to Source Diode Forward  

V

GS

=0V, I

S

=15A  

–

V

Voltage  

Body Diode Reverse Recovery Time  

T

J

=25

℃

,

I

F

=15A,  

35  

53  

ns  

nC  

Body Diode Reverse Recovery  

dI/dt=100A/μs  

Qrr  

–

Charge  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction

T

e

mperature  

2. EAS condition : T

J

=25

℃

,V

DD

=30V,V

G

=10V,L=0.5mH,Rg=25Ω,I

AS

=6.1A  

3. Pulse

T

est: Pulse Width≤300μs, Duty Cycle≤0.5%  

2/5  

-Channel  

N

Enhancement Mosfet  

TMN6005MI  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

I

D

(A)  

I

D

(A)  

40  

40  

10V  

4.5V  

4V  

30  

20  

10  

0

30  

20  

10  

T

J

=125

℃

 

25

℃  

V

GS

=3V  

V

GS

(V)  

3.0  

V

DS

(V)  

0

0

2.0  

4.0  

6.0  

8.0  

10  

0

1.0  

2.0  

4.0  

5.0  

1.0  

50  

Figure 4

: Body Diode Characteristics  

Figure 3:

On-resistance vs. Drain Current  

I

S

(A)  

R

DS(ON)

(mΩ)  

80  

1.0E+01  

1.0E+00  

1.0E-01  

1.0E-02  

60  

V

GS

=4.5V  

V

GS

=10V  

125

℃  

T

J

=25

℃  

40  

20  

1.0E-03  

1.0E-04  

1.0E-05  

I

D

(A)  

20  

V

SD

(V)  

0

0

0.0  

0.2  

0.4  

0.6  

0.8  

10  

30  

40  

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

V

GS

(V)  

10  

8

V

DS

=30V  

I

D

=4.5A  

10

3  

C

iss  

6

10

2  

10

1  

C

oss  

C

rss  

4

2

0

V

DS

(V)  

Q

g

(nC)  

0

3

6

9

12  

15  

0

10  

20  

30  

40  

3/5  

-Channel  

N

Enhancement Mosfet  

TMN6005MI  

Figure 7:

Normalized Breakdown Voltage vs.  

Figure 8:

Normalized on Resistance vs.  

Junction Temperature  

Junction Temperature  

V

BR(DSS)  

R

DS

(on)  

2.5  

1.3  

1.2  

1.1  

1.0  

2.0  

1.5  

1.0  

0.5  

0.9  

Tj (

℃

)  

Tj (

℃

)  

0

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 9:

Maximum Safe Operating Area  

Figure 10:

Maximum Continuous Drain Current  

vs. Case Temperature  

I

D

(A

)

 

I

D

(A

)  

6

100  

10μs  

5

4

100μs  

1ms  

10  

1

10ms  

3

Limited by R

DS(on)  

100ms  

DC  

2

1

T

C

=25

℃  

Single pulse  

0.1  

0.01  

Tc (

℃

)  

75 100  

V

DS

(V)  

10  

0

0.1  

1

100  

0

25  

50  

125  

150  

175  

Figure.11:

Maximum Effective  

Transient Thermal Impedance, Junction-to-Case  

Zth

J-C

(

℃

/W)  

10

1  

10

0  

10

-1  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

D=0.05  

D=0.02  

D=0.01  

Single pulse  

10

-2  

10

-3  

Notes:  

1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJC

+T

C  

T

P

(s)  

10

-2  

10

-6  

10

-5  

10

-4  

10

-3  

10

-1  

10

0  

10

1  

4/5  

Package Information:SOT-23-3L  

:

Dimensions In Millimeters  

Symbol  

Dimensions In Inches  

Min.  

Min.  

1.050  

0.000  

1.050  

0.300  

0.100  

2.820  

1.500  

2.650  

Max.  

1.250  

0.100  

1.150  

0.500  

0.200  

3.020  

1.700  

2.950  

Max.  

0.049  

0.004  

0.045  

0.020  

0.008  

0.119  

0.067  

0.116  

A

A1  

A2  

b

c

D

0.041  

0.000  

0.041  

0.012  

0.004  

0.111  

0.059  

0.104  

E1  

E

e

0.950(BSC)  

0.037(BSC)  

e1  

L

θ

1.800  

0.300  

0°  

2.000  

0.600  

8°  

0.071  

0.012  

0°  

0.079  

0.024  

8°  

5/5